N-Channel 190-V (D-S) MOSFET · SiB452DK New Product ... PowerPAK SC-75-6L-Single 6 5 4 1 2 3 D D D...

Vishay SiliconixSiB452DK

New Product

Document Number: 68832S-81724-Rev. A, 04-Aug-08

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N-Channel 190-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK®

SC-75 Package- Small Footprint Area- Low On-Resistance

APPLICATIONS • Boost Converter for Portable Devices

PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.)

190

2.4 at VGS = 4.5 V 1.5

2.3 nC2.6 at VGS = 2.5 V 1.48

6.0 at VGS = 1.8 V 0.4

Marking Code

X X X

A C X

Lot Traceability and Date code

Part # code

Ordering Information: SiB452DK-T1-GE3 (Lead (Pb)-free and Halogen-free)

PowerPAK SC-75-6L-Single

6

5

4

1

2

3

D

D

D

D

G

S

S

1.60 mm1.60 mm

N-Channel MOSFET

G

D

S

Notes: a. TC = 25 °C.b. Surface Mounted on 1" x 1" FR4 board.c. t = 5 s.d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed andis not required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.f. Maximum under Steady State conditions is 105 °C/W.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise notedParameter Symbol Limit Unit Drain-Source Voltage VDS 190

VGate-Source Voltage VGS ± 16

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

1.5

A

TC = 70 °C 1.24TA = 25 °C 0.67b, c

TA = 70 °C 0.53b, c

Pulsed Drain Current IDM 1.5

Continuous Source-Drain Diode CurrentTC = 25 °C

IS1.5

TA = 25 °C 0.67b, c

Maximum Power Dissipation

TC = 25 °C

PD

13

WTC = 70 °C 8.4TA = 25 °C 2.4b, c

TA = 70 °C 1.6b, c

Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150°C

Soldering Recommendations (Peak Temperature)d, e 260

THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambientb, f t ≤ 5 s RthJA 41 51°C/W

Maximum Junction-to-Case (Drain) Steady State RthJC 7.5 9.5

RoHSCOMPLIANT

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Notes:a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximumrating conditions for extended periods may affect device reliability.

SPECIFICATIONS TJ = 25 °C, unless otherwise notedParameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 190 V

VDS Temperature Coefficient ΔVDS/TJ ID = 250 µA

202mV/°C

VGS(th) Temperature Coefficient ΔVGS(th)/TJ - 3.2

Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.6 1.5 V

Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 16 V ± 100 nA

Zero Gate Voltage Drain Current IDSSVDS = 190 V, VGS = 0 V 1

µAVDS = 190 V, VGS = 0 V, TJ = 55 °C 10

On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 4.5 V 1.5 A

Drain-Source On-State Resistancea RDS(on)

VGS = 4.5 V, ID = 0.5 A 1.8 2.4

ΩVGS = 2.5 V, ID = 0.45 A 1.9 2.6

VGS = 1.8 V, ID = 0.2 A 2.0 6.0

Forward Transconductancea gfs VDS = 10 V, ID = 0.5 A 3 S

Dynamicb

Input Capacitance Ciss

VDS = 50 V, VGS = 0 V, f = 1 MHz

135

pFOutput Capacitance Coss 9

Reverse Transfer Capacitance Crss 6

Total Gate Charge QgVDS = 95 V, VGS = 10 V, ID = 0.7 A 4.3 6.5

nCVDS = 95 V, VGS = 4.5 V, ID = 0.7 A

2.3 3.5

Gate-Source Charge Qgs 0.4

Gate-Drain Charge Qgd 1.0

Gate Resistance Rg f = 1 MHz 2.2 Ω

Turn-On Delay Time td(on)

VDD = 95 V, RL = 190 Ω ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 1 Ω

12 20

ns

Rise Time tr 16 25

Turn-Off Delay Time td(off) 30 45

Fall Time tf 15 25

Turn-On Delay Time td(on)

VDD = 95 V, RL = 190 Ω ID ≅ 0.5 A, VGEN = 10 V, Rg = 1 Ω

5 10

Rise Time tr 10 15

Turn-Off Delay Time td(off) 10 15

Fall Time tf 10 15

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current IS TC = 25 °C 1.5A

Pulse Diode Forward Current ISM 1.5

Body Diode Voltage VSD IS = 0.5 A, VGS = 0 V 0.8 1.2 V

Body Diode Reverse Recovery Time trr

IF = 0.5 A, dI/dt = 100 A/µs, TJ = 25 °C

40 60 ns

Body Diode Reverse Recovery Charge Qrr 45 70 nC

Reverse Recovery Fall Time ta 20ns

Reverse Recovery Rise Time tb 19


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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0.0

0.3

0.6

0.9

1.2

1.5

0 1 2 3 4 5

VGS = 5 thru 2 V

VGS = 1 V

VDS - Drain-to-Source Voltage (V)

- D

rain

Cur

rent

(A)

I D

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0.0 0.3 0.6 0.9 1.2 1.5

VGS = 2.5 V

VGS = 4.5 V

VGS = 1.8 V

- O

n-R

esis

tanc

e(Ω

)R

DS

(on)

ID - Drain Current (A)

0

2

4

6

8

10

0 1 2 3 4 5

VDS = 152 V

ID = 0.7 A

VDS = 95 V

- G

ate-

to-S

ourc

eV

olta

ge(V

)

Qg - Total Gate Charge (nC)

VG

S

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0.0

0.2

0.4

0.6

0.8

1.0

0.0 0.5 1.0 1.5 2.0

TC = 25 °C

TC = 125 °C

TC = - 55 °C

VGS - Gate-to-Source Voltage (V)

- D

rain

Cur

rent

(A)

I D

0

30

60

90

120

150

180

210

0 10 20 30 40 50

Ciss

Coss

Crss

VDS - Drain-to-Source Voltage (V)

C -

Cap

acita

nce

(pF

)

0.4

0.8

1.2

1.6

2.0

2.4

- 50 - 25 0 25 50 75 100 125 150

VGS = 4.5 V, 2.5 V; ID = 0.5 A

VGS = 1.8 V; ID = 0.2 A

TJ - Junction Temperature (°C)

(Nor

mal

ized

)

- O

n-R

esis

tanc

eR

DS

(on)

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Soure-Drain Diode Forward Voltage

Threshold Voltage

0.01

0.1

1

10

0.0 0.2 0.4 0.6 0.8 1.0

TJ = 150 °C

VSD - Source-to-Drain Voltage (V)

- S

ourc

eC

urre

nt(A

)I S

TJ = 25 °C

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

- 50 - 25 0 25 50 75 100 125 150

ID = 250 µA

(V)

VG

S(t

h)

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0

2

4

6

8

0 2 4 6 8 10

TJ = 25 °C

TJ = 125 °C

ID = 0.5 A

- O

n-R

esis

tanc

e(Ω

)R

DS

(on)

VGS - Gate-to-Source Voltage (V)

1000 100 1 0.001 0.01 0.1 10

Pow

er (

W)

Pulse (s)

20

10

5

15

0

Safe Operating Area, Junction-to-Ambient

0.001

1

1 10 100 1000

0.01

10

0.1

TA = 25 °CSingle Pulse

Limited by RDS(on)*

BVDSS Limited

1 ms

100 µs

10 ms

100 ms1 s, 10 s

VDS - Drain-to-Source Voltage (V)* VGS > minimum VGS at which RDS(on) is specified

-D

rain

Cur

rent

(A)

I D

DC

IDM Limited

ID(on)Limited


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New Product


* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upperdissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the packagelimit.

Current Derating*

0.0

0.4

0.8

1.2

1.6

2.0

0 25 50 75 100 125 150

TC - Case Temperature (°C)

I D-

Dra

inC

urre

nt(A

)

Power Derating

0

3

6

9

12

15

25 50 75 100 125 150

T C - Case Temperature (°C)

r (W

)e

w oP

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New Product


Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for SiliconTechnology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see http://www.vishay.com/ppg?68832.

Normalized Thermal Transient Impedance, Junction-to-Ambient

1

0.1

0.01

Nor

mal

ized

Effe

ctiv

e Tr

ansi

ent

The

rmal

Impe

danc

e

10-3 10-2 1 10 100010-110-4 100

Square Wave Pulse Duration (s)

Duty Cycle = 0.5

Single Pulse

0.1

0.2

0.05

0.02

1. Duty Cycle, D =

2. Per Unit Base = RthJA = 80 °C/W

3. TJM - TA = PDMZthJA(t)

t1t2

t1t2

Notes:

4. Surface Mounted

PDM

Normalized Thermal Transient Impedance, Junction-to-Case

10 -3 10 -2 10 -110 -4

1

0.1

Square Wave Pulse Duration (s)

Nor

mal

ized

Ef fe

ctiv

e T

rans

ient

T

herm

al Im

peda

nce

Duty Cycle = 0.5

Single Pulse0.02

0.05

0.1

0.2

Vishay SiliconixPackage Information

Document Number: 7300006-Aug-07

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PowerPAK® SC75-6L

DIM

SINGLE PAD DUAL PAD

MILLIMETERS INCHES MILLIMETERS INCHES

Min Nom Max Min Nom Max Min Nom Max Min Nom Max

A 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032

A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002

b 0.18 0.25 0.33 0.007 0.010 0.013 0.18 0.25 0.33 0.007 0.010 0.013

C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010

D 1.53 1.60 1.70 0.060 0.063 0.067 1.53 1.60 1.70 0.060 0.063 0.067

D1 0.57 0.67 0.77 0.022 0.026 0.030 0.34 0.44 0.54 0.013 0.017 0.021

D2 0.10 0.20 0.30 0.004 0.008 0.012

E 1.53 1.60 1.70 0.060 0.063 0.067 1.53 1.60 1.70 0.060 0.063 0.067

E1 1.00 1.10 1.20 0.039 0.043 0.047 0.51 0.61 0.71 0.020 0.024 0.028

E2 0.20 0.25 0.30 0.008 0.010 0.012

E3 0.32 0.37 0.42 0.013 0.015 0.017

e 0.50 BSC 0.020 BSC 0.50 BSC 0.020 BSC

K 0.180 TYP 0.007 TYP 0.245 TYP 0.010 TYP

K1 0.275 TYP 0.011 TYP 0.320 TYP 0.013 TYP

K2 0.200 TYP 0.008 TYP 0.200 BSC 0.008 TYP

K3 0.255 TYP 0.010 TYP

K4 0.300 TYP 0.012 TYP

L 0.15 0.25 0.35 0.006 0.010 0.014 0.15 0.25 0.35 0.006 0.010 0.014

T 0.03 0.08 0.13 0.001 0.003 0.005

ECN: C-07431 − Rev. C, 06-Aug-07DWG: 5935

BACKSIDE VIEW OF SINGLE BACKSIDE VIEW OF DUAL

Notes:1. All dimensions are in millimeters2. Package outline exclusive of mold flash and metal burr3. Package outline inclusive of plating

e b e b

K1 K2 K3 K2 K1 K2 K2 PIN6 PIN5 PIN4

D1

D2

D1 D1

PIN6 PIN5 PIN4

PIN1 PIN2 PIN3

DETAIL Z

D A

A1

Zz

C

E

E1

E1

E1

K

K

K

K4

L E

2

PIN2 PIN1 PIN3

L

E3

Application Note 826Vishay Siliconix

Document Number: 70488 www.vishay.comRevision: 21-Jan-08 13

AP

PL

ICA

TIO

N N

OT

E

RECOMMENDED PAD LAYOUT FOR PowerPAK® SC75-6L Single

1

1.250 (0.049)

0.250 (0.01)

0.400 (0.016)

0.250 (0.01)

0.300 (0.012)

1.700 (0.067) 1.100 (0.043)

0.300 (0.012)

0.180 (0.007)

0.620 (0.024)

0.300 (0.012)

2.000 (0.079)

0.250 (0.01)0.545 (0.021)

0.670 (0.026)

2.000 (0.079)

Dimensions in mm/(Inches)

0.200 (0.008)

0.370 (0.015)

0.500 (0.02)

Return to Index

Legal Disclaimer Noticewww.vishay.com Vishay

Revision: 08-Feb-17 1 Document Number: 91000

DisclaimerALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.

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N-Channel 190-V (D-S) MOSFET · SiB452DK New Product ... PowerPAK SC-75-6L-Single 6 5 4 1 2 3 D D D...

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