MITSUBISHI RF POWER MODULE M68731H · PDF filesilicon mos fet power amplifier, 150-175mhz, 7w,...
3
SILICON MOS FET POWER AMPLIFIER, 150-175MHz, 7W, FM PORTABLE RADIO M68731H MITSUBISHI RF POWER MODULE Nov. ´97 1 PIN: Pin : RF INPUT VGG : GATE BIAS SUPPLY VDD : DRAIN BIAS SUPPLY PO : RF OUTPUT GND: FIN BLOCK DIAGRAM 1 2 3 4 5 4 5 3 2 Symbol Parameter Test conditions Limits Min Max Unit f PO ηT 2fO ρin - Frequency range Output power Total efficiency 2nd. harmonic Input VSWR Load VSWR tolerance VDD=7.2V, VGG=3.5V, Pin=50W VDD=9.2V, Pin=50mW, PO=7W (VGG adjust), ZL=20:1 150 175 7 50 -20 No degradation or destroy MHz W % dBc - - Note. Above parameters, ratings, limits and test conditions are subject to change. ELECTRICAL CHARACTERISTICS (Tc=25°C,ZG=ZL=50Ω unless otherwise noted) Symbol Parameter Conditions Ratings Unit ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Note. Above parameters are guarateed independently. V 9.2 VDD Supply voltage V 4 VGG Gate bias voltage mW 70 Pin Input power W 10 PO Output power °C -30 to +100 TC (OP) Operation case temperature °C -40 to +110 Tstg Strage temperature VGG≤3.5V, ZG=ZL=50Ω f=150-175MHz, ZG=ZL=50Ω f=150-175MHz, ZG=ZL=50Ω f=150-175MHz, ZG=ZL=50Ω Stability 4 ZG=50Ω, VDD=4-9.2V, Load VSWR<4:1 - - No parasitic oscillation 13.7±1 18.8±1 6±1 23.9±1 OUTLINE DRAWING Dimensions in mm 30±0.2 26.6±0.2 2-R1.5±0.1 1 2 3 4 5 0.45 21.2±0.2
Transcript of MITSUBISHI RF POWER MODULE M68731H · PDF filesilicon mos fet power amplifier, 150-175mhz, 7w,...
SILICON MOS FET POWER AMPLIFIER, 150-175MHz, 7W, FM PORTABLE RADIO
M68731HMITSUBISHI RF POWER MODULE
Nov. ´97
1
PIN:Pin : RF INPUTVGG : GATE BIAS SUPPLYVDD : DRAIN BIAS SUPPLYPO : RF OUTPUTGND: FIN
BLOCK DIAGRAM
1
2
3
4
5
4
5
32
Symbol Parameter Test conditionsLimits
Min MaxUnit
fPO
ηT
2fOρin
-
Frequency rangeOutput powerTotal efficiency
2nd. harmonic
Input VSWR
Load VSWR tolerance
VDD=7.2V, VGG=3.5V, Pin=50W
VDD=9.2V, Pin=50mW, PO=7W (VGG adjust), ZL=20:1
150 1757
50
-20
No degradation or destroy
MHzW
%
dBc
-
-
Note. Above parameters, ratings, limits and test conditions are subject to change.
ELECTRICAL CHARACTERISTICS (Tc=25°C,ZG=ZL=50Ω unless otherwise noted)
Symbol Parameter Conditions Ratings Unit
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Note. Above parameters are guarateed independently.
V9.2VDD Supply voltageV4VGG Gate bias voltage
mW70Pin Input powerW10PO Output power°C-30 to +100TC (OP) Operation case temperature°C-40 to +110Tstg Strage temperature
VGG≤3.5V, ZG=ZL=50Ω
f=150-175MHz, ZG=ZL=50Ωf=150-175MHz, ZG=ZL=50Ωf=150-175MHz, ZG=ZL=50Ω
Stability
4ZG=50Ω, VDD=4-9.2V, Load VSWR<4:1
-
-
No parasitic oscillation
13.7±1
18.8±1
6±1
23.9±1
OUTLINE DRAWING Dimensions in mm
30±0.226.6±0.2
2-R1.5±0.1
1 2 3 45
0.45
21.2±0.2
SILICON MOS FET POWER AMPLIFIER, 150-175MHz, 7W, FM PORTABLE RADIO
M68731HMITSUBISHI RF POWER MODULE
Nov. ´97
OUTPUT POWER, TOTAL EFFICIENCYVS. GATE VOLTAGE
GATE VOLTAGE VGG (V)
100
10
12
100
10
1
0.10.5 3.531 1.5 2.5
OUTPUT POWER, TOTAL EFFICENCYVS. INPUT POWER
INPUT POWER Pin (mW)
100
10
11
100
10
1
0.10.01 1000.1 10
OUTPUT POWER, TOTAL EFFICENCYVS. INPUT POWER
INPUT POWER Pin (mW)
100
10
11
100
10
1
0.10.01 1000.1 10
OUTPUT POWER, TOTAL EFFICIENCYVS. SUPPLY VOLTAGE
SUPPLY VOLTAGE VDD (V)
100
60
40
203 4 6 8 9
50
30
16
10
6
4
2
0
@f=175MHzVGG=3.5VPin=50mW
PO
80
14
5 7
8
12
90
70
OUTPUT POWER, TOTAL EFFICIENCYVS. SUPPLY VOLTAGE
SUPPLY VOLTAGE VDD (V)
100
60
40
203 4 6 8 9
50
30
16
10
6
4
2
0
@f=150MHzVGG=3.5VPin=50mW
80
14
5 7
TYPICAL PERFORMANCE DATAOUTPUT POWER, INPUT VSWR,
TOTAL EFFICIENCY VS. FREQUENCY
FREQUENCY f (MHz)
90
50
20130 140 150 180
ρin
70
30
14
11
7
4
2
0160 170
80
40
609
5
3
1
13
10
6
8
12
@VDD=7.2VVGG=3.5VPin=50mW
PO
ηT
8
12
90
70PO
ηT
ηT
@VDD=7.2VVGG=3.5Vf=150MHz
PO
ηT
@VDD=7.2VVGG=3.5Vf=175MHz
PO
ηT
PO
ηT
@VDD=7.2VPin=50mWf=150MHz
SILICON MOS FET POWER AMPLIFIER, 150-175MHz, 7W, FM PORTABLE RADIO
M68731HMITSUBISHI RF POWER MODULE
Nov. ´97
OUTPUT POWER, TOTAL EFFICIENCYVS. GATE VOLTAGE
GATE VOLTAGE VGG (V)
100
10
12
100
10
1
0.10.5 3.531 1.5 2.5
@VDD=7.2VPin=50mWf=175MHz
PO
ηT
![[ V ] r ( ) rf + Ñ × rf - GÑf t - fem.unicamp.brphoenics/SITE_PHOENICS/AULAS/ENERGY_EQ… · rf + Ñ × rf - GÑf = ... Novas variáveis podem ser introduzidas via VR ou diretamente](https://static.fdocument.org/doc/165x107/5ba2a4ee09d3f2d14d8c57c4/-v-r-rf-n-rf-gnf-t-fem-phoenicssitephoenicsaulasenergyeq.jpg)
![Atmel AT02865: RF Layout with Microstripww1.microchip.com/downloads/en/AppNotes/Atmel-42131-RF... · 2017-01-05 · Atmel AT02865: RF Layout with Microstrip [APPLICATION NOTE] 42131B−WIRELESS−05/2013](https://static.fdocument.org/doc/165x107/5e2528a335871412bd6f1bd7/atmel-at02865-rf-layout-with-2017-01-05-atmel-at02865-rf-layout-with-microstrip.jpg)
