Millimeter-Wave and Terahertz CMOS Design · 2016. 2. 17. · • Historically, wireless technology...

Millimeter-Wave and Terahertz CMOS Design

Minoru Fujishima

THz wave: Intermediate of radio wave and light

What is mmW & THz? • Definition of millimeter wave (mmW)

– 30GHz ~ 300GHz (wave length: 1mm ~ 10mm) • Definition of Terahertz (THz)

– 100GHz ~ 10THz(wave length: 30μm ~ 3mm) – sometimes 300GHz ~ 3THz (=submmW)

1km 1m 1mm 1um 1nm Wave Length

Sub m

mW

Ultrared

Visible light

Ultraviolet

X ray g ray

Micro w

ave

UH

F H

F M

F

LF

300kHz 300MHz 300GHz 300THz Frequency

mm

W

2011/11/21 2 SSCS Distinguished Lecture

MOSFET Performance in THz Region

ITRS 2010 fmax= 450GHz (2013) = 990GHz (2020)

0

5

10

15

1.00E+11 1.00E+12

65nm-CMOS

2013

2020

Frequency [Hz] 100G 1T 250G 450G

5

0

10

15

MS

G /

MA

G [d

B] MSG / MAG

estimation

MSG=7dB

100G 180G 400G

Matching Network Loss=1dB

Matching Network Loss=1dB

MSG=7dB

Estimated Gain of Amplifier Gain= 5dB @ 100GHz (65nm) = 5dB @ 180GHz (2013) = 5dB @ 400GHz (2020)


Wireless Communication Trend

After T. Nagatsuma (Osaka Univ), Doc.: IEEE 802.15-10-0149-01-0thz

Year

Spe

ed (G

bit/s

)


60 GHz

802.11g 802.16e

(WiMAX Mobile)

802.11n

802.16 (WiMAX Fixed)

2000 2005 2010 2015 2020

1000

100

10

1

0.1

0.01

0.001

802.15.3c

THz (InP)

mmW (InP)

LAN/ PAN

FWA/ FPU

Power can be reduced utilizing wide frequency band

MIMO-OFDM Multiple Input Multiple Output

Orthogonal Frequency Division Multiplexing

OFDM Orthogonal Frequency Division Multiplexing

QAM Quadrature Amplitude

Modulation

QPSK Quadrature Phase-Shift

Keying

Strategies for Ultrahigh-Speed Wireless Communication

Frequency band

Po

wer

Co

nsu

mp

tio

n

Large

Small

Narrow Wide

BPSK Binary Phase-Shift

Keying

Tradeoff between power consumption and frequency band

High-speed communication is realized with limited bandwidth in microwave.

Green High Speed

High Power High Speed

ASK Amplitude-Shift

Keying


Contents • mmW / THz CMOS Design

• 60GHz HDMI Transceiver

• 120 / 140GHz Dual Channel Receiver


Chip Development Process

Measurement

Device

Circuit System


Three Development Tasks

Measurement

Device

Circuit System


Three Development Layers

Measurement

Device

Circuit System


SoC Design

Measurement

Circuit System

Device outsource


Analog/RF Design

Measurement

Circuit System

Device outsource


Millimeter-Wave Design

Measurement

Device

Circuit System



Measurement

Device

Circuit System


mmW Layout Issue

FET

Vgs Vgs

Design without transmission line for analog/RF

Design with transmission line for millimeter wave

Vgs

FET

Vgs

Modeled transmission line is used for interconnect.

・・


Bond-Based Design Use Device Tiles MOSFET Transmission Line Pad etc.

Interface for tiles Transmission Line

Device model including transmission line interface is necessary.

No Parasitic Wire Connect No LPE is required


mmW Decoupling Issue

Dedicated decoupling device for millimeter wave is required.

circuit1 circuit2

circuit3

GND VDD GND

Noise, coupling

2011/11/21 16

Decoupling capacitors have own parasitic impedance. Large C does not always work as a decoupling in millimeter wave.

SSCS Distinguished Lecture

Millimeter-Wave Decoupling

• A transmission line with ultralow characteristic impedance (0WTL) shields the ground impedance.

Ground-impedance shield with

zero-ohm TL

Single-ended amplifier with zero-ohm TL

Zin=0

Parasitic ground

impedance


Impedance of Short Stub

TL Zin Ground

Impedance Z0 , g

Zgnd

=

if Z0 0 (0WTL)

Zin Z0 (Zgnd+Z0)+(Zgnd-Z0)e-2gl

(Zgnd+Z0)-(Zgnd-Z0)e-2gl

0

l


Characteristic Impedance of 0ΩTL

2011/11/21 19

40 80 0 120

1

0

2 C

hara

cter

istic

im

peda

nce

[Ω]

Frequency [GHz]

Measured results



Measurement

Device

Circuit System


Transmission Line Evaluation

THRU (0µm)

TL4 (80µm)

TL6 (120µm)

TL8 (160µm)

TL9 (180µm)


Measurement Issues

-1.8

-1.6

-1.4

-1.2

-1

-0.8

-0.6

-0.4

-0.2

0

1.E+07 1.E+10 2.E+10 3.E+10 4.E+10 5.E+10 6.E+10

S21

[dB

]

Frequency [Hz]

TL9

TL8

TL6

TL4

THRU

-1.2

-1

-0.8

2.E+10 3.E+10 4.E+10

S21

[dB

]

Frequency [Hz]

TL9

TL8

TL6

TL4

THRU

The S21 should be… THRU > TL4 > TL6 > TL8 > TL9

However, in this case… TL6 > TL4 > TL9 > TL8 > THRU

S21 become positive !!

After de-embedding…

-0.15

-0.1

-0.05

0

0.05

0.1

0.15

0.2

0.25

1.E+07 1.E+10 2.E+10 3.E+10 4.E+10 5.E+10 6.E+10

S21

[dB

]

Frequency [Hz]

TL9

TL8

TL6

TL4


Caused by irreproducible probing!

THRU

TL4 TL6

Probe positions were irreproducible.

Length & contact resistance are fluctuating.

(a) (b)

(a) touch down

(b) skate


Accurate Probing

THRU

TL4 TL6

By utilizing scotch tape marker…


Measured Results

The S21 is expected order THRU > TL4 > TL6 > TL8 > TL9

S21 become normal

After de-embedding… -1.8

-1.6

-1.4

-1.2

-1

-0.8

-0.6

-0.4

-0.2

0

1.E+07 1.E+10 2.E+10 3.E+10 4.E+10 5.E+10 6.E+10

S21

[dB

]

Frequency [Hz]

TL9

TL8

TL6

TL4

THRU

-1.2

-1

-0.8

2.E+10 3.E+10 4.E+10

S21

[dB

]

Frequency [Hz]

TL9

TL8

TL6

TL4

THRU

-0.4

-0.3

-0.2

-0.1

0

0.1

0.2

1.E+07 1.E+10 2.E+10 3.E+10 4.E+10 5.E+10 6.E+10

S21

[dB

]

Frequency [Hz]

TL9

TL8

TL6

TL4



Measurement

Device

Circuit System


Admittance Comparison

0

5

10

15

Im {y

11} [

mS

]

-5

-4

-3

-2

-1

0

Im {y

12} [

mS

]

-16

-12

-8

-4

0 0 0.5 1

Im {y

21} [

mS

]

Vgs [V]

0

4

8

12

16

0 0.5 1

Im {y

22} [

mS

]

Vgs [V]

20GHz

60GHz

100GHz

20GHz

60GHz

100GHz

20GHz

60GHz

100GHz Measurement Measurement

Measurement Measurement

100GHz

60GHz

20GHz


Verification using Amplifier

65nm-CMOS Technology

Simplified Circuit Diagram

in out

bias vdd

ground

ground ground

ground

ground

in out

W/L = 32μm/44nm

71.1μm 31.2μm

100.

6μm

101.5μm 55.8μm

73.7

μm

75fF

bias

vdd

Y-wrapper model of MOSFET

Transmission lines

Capacitor

Tiles


Measured and Simulated Results

-40

-30

-20

-10

0

10

-40

-30

-20

-10

0

10

20 60 100 Frequency [GHz]

20 60 100 Frequency [GHz]

S-p

aram

eter

[dB]

S

-par

amet

er [d

B]

bias = 0.0V vdd = 1.1V




S11

S21

S12

S22



Measurement

Device

Circuit System


Wideband 140GHz CMOS Amp.

M1

M2 M3

126m

112m

21m

41m

63m 17m

126m

56m

17m 23m

56m

42m

72fFL/W of MOSFET = 65nm / 22.6mm

Transmission line unit : m

M4

40m

27m

26m

M5

23m

60m

27m

M6

17m

26m

27m

M7

60m

410m

174m

Input Output


Wideband LNA

Matching

Network

Low group delay

variation

freq.

・・・・・Matching

Network

Matching

NetworkMatching

Network

Matching

Network

Matching

Network

Gai

n

Wide

freq.

1stageGro

up D

elay

(Total) n-stages

2stages

・・・

1stage2stages

・・・

3stages 3stages

(Total) n-stages

Center frequencies in matching networks are distributed to flatten frequency responses of power gain and group delay.

Six-stage amplifier


Measurement Results

-20

-10

0

10

20

Frequency [GHz]

Gai

n [d

B]

Gro

up D

elay

[ps

]

01020304050

9.7

9.8

9.9

10.0

130 134 142Frequency [GHz]

Gai

n [d

B]

12GHz

0.1dB

138 146

100 120 140 160 180

Freq.

[GHz]

0.1dB-BW

[GHz]

3dB-BW

[GHz]

Peak Gain

[dB]

GD @3dB-BW

[ps]

PDC [mW]

Technology

[nm]

136.1 12 27.6 9.9 46.2±13.1 57.1 65

Specification Summary

Frequency Characteristics



Measurement

Device

Circuit System


Promising Application： Indoor PAN

1. Bit rates unmatched by any other wireless technologies are offered. • Historically, wireless technology

that offers more throughput (even at short ranges) is interested.

2. Costs are comparable to existing technologies • The market wants more for the

same cost. Going 10x faster captures the market, but charging 10x more is not allowed.

3. Power/bit is less than existing technology • Going 10x faster is done with the

same battery used by the same technology.

Rick Roberts (Intel), 802.15 THz IG THz will be exciting if and when …

Distance: LOS ~1 meter Bit Rates: 20 to 50+ Gbps Cost: comparable to Bluetooth Power consumption: comparable to Bluetooth

So what might make a winning solution?


Wideband 60GHz Regulations

North America (57.05~64)

Japan (59~66)

Korea (57~64)

57 58 59 60 61 62 63 64 65 66 Frequency [GHz]

Europe (57~66)

0 f

License free BW=7GHz

Pout=+10dBm


Target Application: Mobile Streaming

TX Data Power

TV set or projector

RX Data

Mobile device

ANT ANT

Mobile streaming application for mmw.

TX Power consumption should be reduced for mobile streaming applications.


http://img.kakaku.com/images/productimage/fullscale/K0000080324.jpghttp://img.kakaku.com/images/productimage/fullscale/K0000053450.jpg

mmWave Simplex Communication

In TX mmw

repeater

Out RX mmw

repeater

High-speed streaming

In Out

ISM transceiver

In Out

ISM transceiver

Low-speed control signal

Low-frequency ISM band

Millimeter-wave band

Simplex Communication

Duplex Communication


Repeater for Low Power

1 0 1 1

t

Vin

Input waveform

1 0 1 1

t

Vout

Output waveform

Digital data transfered from baseband to mmWave.

IN OUT TX

mmw repeater

Simple architecture Realizes lower power.

Tx “Repeater”

Rx “Repeater”

1 0 1 1

t

Vout

Output waveform

1 0 1 1

t

Vin

Input waveform

OUT IN RX

mmw repeater

Digital data transfered from mmWave to baseband.


Low-Power 3CH TX and RX Repeaters ON/OFF

CH1

ASK mod

FLL

VCO1 VGA LNA

MIX

VCO2 Demod

CH1 f1 f1

CH2

ASK mod

FLL

VCO1 VGA LNA

MIX

VCO2 Demod

CH2 f2 f2

CH3

TX RX

ASK mod

FLL

VCO1 VGA LNA

MIX

VCO2 Demod

CH3 f3 f3

CMOS CMOS 2011/11/21 41 SSCS Distinguished Lecture

Chip and Module Photographs

CMOS chip

patch antenna

substrate

Bias, control and digital data.

3 Channel 60GHz Module

transmission line

substrate

CH

1C

H2

CH

3

4cm

7cm

CH1 CH2

CH3

5mm

2.7m

m

2.3m

m TX Chip

CH1 CH2

CH3

RX Chip


Wireless Communication Measurement

RX Module

TV

TX module

Blu-ray player

1.5, 1.9133 / 206-47dBm62.6Gbps90nm CMOS

[5]ISSCC08

6.4, 5.8800 / 527NF=5-6.7dB17630Mbps130nm SiGe

[4]ISSCC06

18W / 18W

183 / 103

173 / 189

170 /138

51 / 116

PowerConsumption

(TX / RX)[mW]

6.88(TX+RX)NA10.664Gbps

90nm CMOS

[7]ISSCC09

0.43, 0.68NA72.5Gbps90nm CMOS

[8] ISSCC09

Chip set solution

2.63, 3.83

0.85, 1.92

Core areaTX, RX[mm2]

-65dBm

NF=9dB

-52dBm

RX Sensitivity orNoise Figure

27NANot

available[3]

2009

57Gbps90nm CMOS

[6]ISSCC08

51Gbps90nm CMOS

This Work

TX RF Power

[dBm]

Data RateTechnology

1.5, 1.9133 / 206-47dBm62.6Gbps90nm CMOS

[5]ISSCC08

6.4, 5.8800 / 527NF=5-6.7dB17630Mbps130nm SiGe

[4]ISSCC06

18W / 18W

183 / 103

173 / 189

170 /138

51 / 116

PowerConsumption

(TX / RX)[mW]

6.88(TX+RX)NA10.664Gbps

90nm CMOS

[7]ISSCC09

0.43, 0.68NA72.5Gbps90nm CMOS

[8] ISSCC09

Chip set solution

2.63, 3.83

0.85, 1.92

Core areaTX, RX[mm2]

-65dBm

NF=9dB

-52dBm

RX Sensitivity orNoise Figure

27NANot

available[3]

2009

57Gbps90nm CMOS

[6]ISSCC08

51Gbps90nm CMOS

This Work

TX RF Power

[dBm]

Data RateTechnology

System Spec.


Worldwide Radio Wave Allocation

REGION 1

REGION 2

REGION 3 REGION 3

160º 140º 120º 100º 80º 60º 40º 20º 0º 20º 40º 60º 80º 100º 120º 140º 160º 180º 170º

170º

160º 140º 120º 100º 80º 60º 40º 20º 0º 20º 40º 60º 80º 100º 120º 140º 160º 180º

170º

170º

75º

60º

40º 30º

20º

0º

20º 30º 40º

60º

75º

60º

40º 30º 20º

0º

20º 30º 40º

60º A

A B

B C

C


Frequency Allocation in Japan (region 3)

2011/11/21 46

86 92

100 102

109.5 111.8

114.25 116

148.5 151.5

164 167

182 185 190

191.8 200

209

226 231.5

250 252

Forbidden band

http://www.tele.soumu.go.jp/j/adm/freq/search/myuse/use/

Wireless communication may be available when the forbidden bands are avoided.

Rad

io

Astr

onom

y

Rad

io

Astr

onom

y

Amature


Frequency Allocation in Region 1 & 2

2011/11/21 47

Forbidden bands exclusively used by “Radio Astronomy”, “Earth Exploration Satellite”, “Space Research” are same as those in region 1.

Frequency allocation in UK (region 1)

Forbidden bands exclusively used by “Radio Astronomy”, “Earth Exploration Satellite”, “Space Research” are different from those in region 1.

Frequency allocation in USA(region 2)


4 1 2

Channelization Plan for THz Channel Number

Low Freq. (GHz)

Center Freq. (GHz)

High Freq. (GHz)

3dB BW (GHz)

Roll-Off Factor

1 116.589 124.089 131.589 12 0.25 2 132.100 139.600 147.100 12 0.25 3 147.611 155.111 162.611 12 0.25 4 167.000 174.500 182.000 12 0.25

110 120 130 140 150 160 170 180 190 fGHz

J,EU

9 GHz

15 GHz 12 GHz

J,EU J,EU J,EU

USA

3

D band G band

Forbidden band

region 1&3

region 2

When channels are allocated in D and G bands, three channels are available in worldwide as in 60GHz bands (IEEE 802.15.3c). cf: 60GHz-band 2GHz/ch

D-band+ 15GHz/ch 2011/11/21 48 SSCS Distinguished Lecture

Dual-Channel ASK Receiver

LNA

LA Output : Digital Signal

1 1 0 1 0

Input ：ASK Signal (120GHz)

RX (120GHz)

DET

1 1 0 1 0

LNA

LA Output : Digital Signal

DET

1 0 0 1 0

RX (140GHz)

1 0 0 1 0

f 140GHz

f 120GHz

Input ：ASK Signal (140GHz)

DCOC

DCOC

Data Rate : fdata [bps]

2 fdata

2 fdata

Channel Selection

Channel Selection is required for receivers.


Channel Selection using LNA

Frequency

Desired Channel

Undesired Channel

120-GHz LNA 5 stage cascaded amplifier

140-GHz LNA 6 stage cascaded amplifier

Cascode amplifier

Common source amplifier

Cascode amplifier : Stability Common-source amplifier : High gain Matching frequencies are different : Wideband Gain Flatness

Wideband and high-gain properties are required in

desired channel.

Low-gain property is required for channel

selection in undesired channel.


Chip micrograph

65nm CMOS Technology Supply Voltage: 1.2V Power Consumption: 85.7mW (120GHz-RX) 111.7 mW (140GHz-RX)


Frequency Response of LNA

Frequency [GHz]

BE

R

120-GHz RX 140-GHz RX

Frequency [GHz]

Gai

n [d

B]

Gain bandwidth of 140-GHz LNA is too wide. Channel selection is degraded.

Measured BER Measured gain of LNA


Wireless Measurement

Distance [mm]

BER

Pout@TX-ANT: -7.8 dBm (120GHz) -7.2 dBm (140 GHz) 1Gbps 27-1 PRBS

x12

25dBi

25dBi


Benchmark Result

TechnologyFrequency

[GHz]# of

Channel

PowerConsumption

[mW]BER

MaximumData Rate

[Gbps]

CommunicationDistance [m]

[2] InP-HEMT 120 Single 750 1.00E-12 10 200

[3]SiGe

BiCMOS140 Single 1500 (*) N/A 4 1.15

[4]65nmCMOS

140 Single N/A N/A N/A N/A

[5]SiGe

BiCMOS160 Single 1473 N/A N/A N/A

[6]65nmCMOS

120 Single 80.9 (**) 1.00E-09 9 N/A

Thiswork

65nmCMOS

120/140

Dual85.7 (120GHz)111.7 (140GHz)

1.00E-113.0 (120GHz)3.6 (140GHz)

0.3 (120GHz)0.4 (140GHz)

(*) Power consumption of transmitter is included

(**) Low-noise amplifier is not included

Required energy per bit : 29pJ/bit (120GHz-RX), 31pJ/bit (140GHz-RX)


Distance: LOS ~1 meter Bit Rates: 20 to 50+ Gbps Cost: comparable to Bluetooth Power consumption: comparable to Bluetooth

Promising Application： Indoor PAN Rick Roberts (Intel)

Towards 10Gbps will become

OK

CMOS possibility for THz is infinite.

Winning Solution

will become


Acknowledgements • This study was partially supported by The Semiconductor

Technology Academic Research Center (STARC), the Core Research for Evolutional Science and Technology (CREST) of the Japan Science and Technology Agency (JST), Extremely Low Power (ELP) project supported by the Ministry of Economy, Trade and Industry (METI) and the New Energy and Industrial Technology Development Organization (NEDO).


Millimeter-Wave and Terahertz CMOS Design · 2016. 2. 17. · • Historically, wireless technology...

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