LT1113 – Dual Low Noise, Precision, JFET Input Op …The LT®1113 achieves a new standard of...

18
LT1113 1 1113fc For more information www.linear.com/LT1113 + + 8 4 5V TO 15V 1 2 3 –5V TO –15V C2 0.47μF 6 5 7 R8 100M R6 100k R4 1M R5 1M 1/2 LT1113 1/2 LT1113 R3 3.9k C1* R1* 100M R7 1M R2 200Ω C T HYDRO- PHONE OUTPUT DC OUTPUT ≤ 2.5mV FOR T A < 70°C OUTPUT VOLTAGE NOISE = 128nV/√Hz AT 1kHz (GAIN = 20) C1 ≈ C T ≈ 100pF TO 5000pF; R4C2 > R8C T ; *OPTIONAL 1113 TA01 INPUT VOLTAGE NOISE (nV/√Hz) 3.8 PERCENT OF UNITS (%) 40 30 20 10 0 4.2 4.6 4.8 5.8 1113 TA02 4.0 4.4 5.0 5.2 5.4 5.6 V S = ±15V T A = 25°C 138 S8 276 OP AMPS TESTED n Photocurrent Amplifiers n Hydrophone Amplifiers n High Sensitivity Piezoelectric Accelerometers n Low Voltage and Current Noise Instrumentation Amplifier Front Ends n Two and Three Op Amp Instrumentation Amplifiers n Active Filters TYPICAL APPLICATION FEATURES DESCRIPTION Dual Low Noise, Precision, JFET Input Op Amp APPLICATIONS The LT ® 1113 achieves a new standard of excellence in noise performance for a dual JFET op amp. The 4.5nV/√Hz 1kHz noise combined with low current noise and picoampere bias currents makes the LT1113 an ideal choice for am- plifying low level signals from high impedance capacitive transducers. The LT1113 is unconditionally stable for gains of 1 or more, even with load capacitances up to 1000pF. Other key features are 0.4mV V OS and a voltage gain of 4 mil- lion. Each individual amplifier is 100% tested for voltage noise, slew rate and gain bandwidth. The design of the LT1113 has been optimized to achieve true precision performance with an industry standard pinout in the S0-8 package. A set of specifications are provided for ± 5V supplies and a full set of matching speci- fications are provided to facilitate the use of the LT1113 in matching dependent applications such as instrumentation amplifier front ends. L, LT, LTC, LTM, Linear Technology and the Linear logo are registered trademarks and C-Load is a trademark of Linear Technology Corporation. All other trademarks are the property of their respective owners. n 100% Tested Low Voltage Noise: 6nV/Hz Max n SO-8 Package Standard Pinout n Voltage Gain: 1.2 Million Min n Offset Voltage: 1.5mV Max n Offset Voltage Drift: 15µV/°C Max n Input Bias Current, Warmed Up: 450pA Max n Gain Bandwidth Product: 5.6MHz Typ n Guaranteed Specifications with ± 5V Supplies n Guaranteed Matching Specifications Low Noise Hydrophone Amplifier with DC Servo 1kHz Input Noise Voltage Distribution

Transcript of LT1113 – Dual Low Noise, Precision, JFET Input Op …The LT®1113 achieves a new standard of...

Page 1: LT1113 – Dual Low Noise, Precision, JFET Input Op …The LT®1113 achieves a new standard of excellence in noise performance for a dual JFET op amp. The 4.5nV/√Hz 1kHz noise combined

LT1113

11113fc

For more information www.linear.com/LT1113

+

+

8

4

5V TO 15V

1

2

3

–5V TO –15V

C20.47µF

6

5

7

R8100M R6

100k

R41M

R51M

1/2LT1113

1/2LT1113

R33.9k

C1*

R1*100M

R71M

R2200Ω

CTHYDRO-PHONE

OUTPUT

DC OUTPUT ≤ 2.5mV FOR TA < 70°COUTPUT VOLTAGE NOISE = 128nV/√Hz AT 1kHz (GAIN = 20)C1 ≈ CT ≈ 100pF TO 5000pF; R4C2 > R8CT; *OPTIONAL

1113 TA01

INPUT VOLTAGE NOISE (nV/√Hz)3.8

PERC

ENT

OF U

NITS

(%)

40

30

20

10

04.2 4.6 4.8 5.8

1113 TA02

4.0 4.4 5.0 5.2 5.4 5.6

VS = ±15VTA = 25°C

138 S8276 OP AMPS TESTED

n Photocurrent Amplifiers n Hydrophone Amplifiers n High Sensitivity Piezoelectric Accelerometers n Low Voltage and Current Noise Instrumentation

Amplifier Front Ends n Two and Three Op Amp Instrumentation Amplifiers n Active Filters

Typical applicaTion

FeaTures DescripTion

Dual Low Noise, Precision, JFET Input Op Amp

applicaTions

The LT®1113 achieves a new standard of excellence in noise performance for a dual JFET op amp. The 4.5nV/√Hz 1kHz noise combined with low current noise and picoampere bias currents makes the LT1113 an ideal choice for am-plifying low level signals from high impedance capacitive transducers.

The LT1113 is unconditionally stable for gains of 1 or more, even with load capacitances up to 1000pF. Other key features are 0.4mV VOS and a voltage gain of 4 mil-lion. Each individual amplifier is 100% tested for voltage noise, slew rate and gain bandwidth.

The design of the LT1113 has been optimized to achieve true precision performance with an industry standard pinout in the S0-8 package. A set of specifications are provided for ±5V supplies and a full set of matching speci-fications are provided to facilitate the use of the LT1113 in matching dependent applications such as instrumentation amplifier front ends.L, LT, LTC, LTM, Linear Technology and the Linear logo are registered trademarks and C-Load is a trademark of Linear Technology Corporation. All other trademarks are the property of their respective owners.

n 100% Tested Low Voltage Noise: 6nV/√Hz Max n SO-8 Package Standard Pinout n Voltage Gain: 1.2 Million Min n Offset Voltage: 1.5mV Max n Offset Voltage Drift: 15µV/°C Max n Input Bias Current, Warmed Up: 450pA Max n Gain Bandwidth Product: 5.6MHz Typ n Guaranteed Specifications with ±5V Supplies n Guaranteed Matching Specifications

Low Noise Hydrophone Amplifier with DC Servo 1kHz Input Noise Voltage Distribution

Page 2: LT1113 – Dual Low Noise, Precision, JFET Input Op …The LT®1113 achieves a new standard of excellence in noise performance for a dual JFET op amp. The 4.5nV/√Hz 1kHz noise combined

LT1113

21113fc

For more information www.linear.com/LT1113

absoluTe MaxiMuM raTingsSupply Voltage –55°C to 105°C ................................................. ± 20V 105°C to 125°C .................................................. ±16VDifferential Input Voltage....................................... ± 40VInput Voltage (Equal to Supply Voltage) ................ ± 20VOutput Short Circuit Duration .......................... 1 MinuteStorage Temperature Range .................. –65°C to 150°C

(Note 1)

Operating Temperature Range LT1113AC/LT1113C (Note 2) ............ –40°C to 85°C LT1113AM/LT1113M (OBSOLETE) –55°C to 125°CSpecified Temperature Range LT1113AC/LT1113C (Note 3) ............ –40°C to 85°C LT1113AM/LT1113M (OBSOLETE) –55°C to 125°C Lead Temperature (Soldering, 10 sec) .................. 300°C

LEAD FREE FINISH TAPE AND REEL PART MARKING PACKAGE DESCRIPTION TEMPERATURE RANGE

LT1113ACN8#PBF LT1113ACN8#TRPBF 1113ACN8 8-Lead PDIP –40°C to 85°C

LT1113CN8#PBF LT1113CN8#TRPBF 1113CN8 8-Lead PDIP –40°C to 85°C

LT1113ACS8#PBF LT1113CS8#TRPBF 1113 8-Lead Plastic SO –40°C to 85°C

OBSOLETE PACKAGE

LT1113AMJ8#PBF LT1113AMJ8#TRPBF 1113AMJ8 8-Lead CERDIP –55°C to 125°C

LT1113MJ8#PBF LT1113MJ8#TRPBF 1113MJ8 8-Lead CERDIP –55°C to 125°C

Consult LTC Marketing for parts specified with wider operating temperature ranges. Consult LTC Marketing for information on nonstandard lead based finish parts.

For more information on lead free part markings, go to: http://www.linear.com/leadfree/ For more information on tape and reel specifications, go to: http://www.linear.com/tapeandreel/

1

2

3

4

8

7

6

5

TOP VIEW

N8 PACKAGE8-LEAD PDIP

B

A

OUT A

–IN A

+IN A

V–

V+

OUT B

–IN B

+IN B

TJMAX = 150°C, θJA = 130°C/W (N8)

1

2

3

4

8

7

6

5

TOP VIEW

S8 PACKAGE8-LEAD PLASTIC SO

B

A

OUT A

–IN A

+IN A

V–

V+

OUT B

–IN B

+IN B

TJMAX = 150°C, θJA = 190°C/W

JB PACKAGE 8-LEAD CERDIP

TJMAX = 160°C, θJA = 100°C/W (J8)

OBSOLETE PACKAGEConsider the N8 Package for Alternate Source

pin conFiguraTion

orDer inForMaTion

Page 3: LT1113 – Dual Low Noise, Precision, JFET Input Op …The LT®1113 achieves a new standard of excellence in noise performance for a dual JFET op amp. The 4.5nV/√Hz 1kHz noise combined

LT1113

31113fc

For more information www.linear.com/LT1113

VS = ±15V, VCM = 0V, TA = 25°C, unless otherwise noted.

SYMBOL PARAMETER CONDITIONS (Note 4)

LT1113AM/AC LT1113M/C

UNITSMIN TYP MAX MIN TYP MAX

VOS Input Offset Voltage VS = ±5V

0.40 0.45

1.5 1.7

0.50 0.55

1.8 2.0

mV mV

IOS Input Offset Current Warmed Up (Note 5) 30 100 35 150 pA

IB Input Bias Current Warmed Up (Note 5) 300 450 320 480 pA

en Input Noise Voltage 0.1Hz to 10Hz 2.4 2.4 µVP-P

Input Noise Voltage Density fO = 10Hz fO = 1000Hz

17 4.5

6.0

17 4.5

6.0

nV/√Hz nV/√Hz

in Input Noise Current Density fO = 10Hz, fO = 1000Hz (Note 6) 10 10 fA/√Hz

RIN Input Resistance Differential Mode Common Mode

VCM = –10V to 8V VCM = 8V to 11V

1011 1011 1010

1011 1011 1010

Ω Ω Ω

CIN Input Capacitance VS = ±5V

14 27

14 27

pF pF

VCM Input Voltage Range (Note 7) 13.0 –10.5

13.5 –11.0

13.0 –10.5

13.5 –11.0

V V

CMRR Common Mode Rejection Ratio VCM = –10V to 13V 85 98 82 95 dB

elecTrical characTerisTics VS = ±15V, VCM = 0V, TA = 25°C, unless otherwise noted.

SYMBOL PARAMETER CONDITIONS

LT1113AM/AC LT1113M/C

UNITSMIN TYP MAX MIN TYP MAX

PSRR Power Supply Rejection Ratio VS = ± 4.5V to ± 20V 86 100 83 98 dB

AVOL Large-Signal Voltage Gain VO = ±12V, RL = 10k 1200 4800 1000 4500 V/mV

VO = ±10V, RL = 1k 600 4000 500 3000 V/mV

VOUT Output Voltage Swing RL = 10k RL = 1k

±13.5 ±12.0

±13.8 ±13.0

±13.0 ±11.5

±13.8 ±13.0

V V

SR Slew Rate RL ≥ 2k (Note 9) 2.3 3.9 2.3 3.9 V/µs

GBW Gain Bandwidth Product fO = 100kHz 4.0 5.6 4.0 5.6 MHz

tS Settling Time 0.01%, AV = +1, RL = 1k, CL ≤ 1000pF, 10V Step

4.2 4.2 µs

Channel Separation fO = 10Hz, VO = ±10V, RL = 1k 130 126 dB

IS Supply Current per Amplifier 5.3 6.25 5.3 6.50 mA

VS = ±5V 5.3 6.20 5.3 6.45 mA

∆VOS Offset Voltage Match 0.8 2.5 0.8 3.3 mV

∆IB+ Noninverting Bias Current Match Warmed Up (Note 5) 10 80 10 120 pA

∆CMRR Common Mode Rejection Match (Note 11) 81 94 78 94 dB

∆PSRR Power Supply Rejection Match (Note 11) 82 95 80 95 dB

Page 4: LT1113 – Dual Low Noise, Precision, JFET Input Op …The LT®1113 achieves a new standard of excellence in noise performance for a dual JFET op amp. The 4.5nV/√Hz 1kHz noise combined

LT1113

41113fc

For more information www.linear.com/LT1113

The l denotes specifications which apply over the temperature range 0°C ≤ TA ≤ 70°C. VS = ±15V, VCM = 0V, unless otherwise noted. (Note 12)

SYMBOL PARAMETER CONDITIONS (Note 4)

LT1113AC LT1113C

UNITSMIN TYP MAX MIN TYP MAX

VOS Input Offset Voltage VS = ±5V

l

l

0.6 0.7

2.1 2.3

0.7 0.8

2.5 2.7

mV mV

∆VOS ∆Temp

Average Input Offset Voltage Drift

(Note 8) l 7 15 8 20 µV/°C

IOS Input Offset Current l 50 350 55 450 pA

IB Input Bias Current l 600 1200 700 1600 pA

VCM Input Voltage Range l

l

12.9 –10.0

13.4 –10.8

12.9 –10.0

13.4 –10.8

V V

CMRR Common Mode Rejection Ratio VCM = –10V to 12.9V l 81 97 79 94 dB

PSRR Power Supply Rejection Ratio VS = ±4.5V to ±20V l 83 99 81 97 dB

AVOL Large-Signal Voltage Gain VO = ±12V, RL = 10k VO = ±10V, RL = 1k

l

l

900 500

3600 2600

800 400

3400 2400

V/mV V/mV

VOUT Output Voltage Swing RL = 10k RL = 1k

l

l

±13.2 ±11.7

±13.5 ±12.7

±12.7 ±11.3

±13.5 ±12.7

V V

SR Slew Rate RL ≥ 2k (Note 9) l 2.1 3.7 1.7 3.7 V/µs

GBW Gain Bandwidth Product fO = 100kHz l 3.2 4.5 3.2 4.5 MHz

IS Supply Current per Amplifier VS = ±5V

l

l

5.3 5.3

6.35 6.30

5.3 5.3

6.55 6.50

mA mA

∆VOS Offset Voltage Match l 0.9 3.5 0.9 4.5 mV

∆IB+ Noninverting Bias Current Match l 30 300 35 400 pA

∆CMRR Common Mode Rejection Match (Note 11) l 76 93 74 93 dB

∆PSRR Power Supply Rejection Match (Note 11) l 79 93 77 93 dB

The l denotes specifications which apply over the temperature range –40°C ≤ TA ≤ 85°C. VS = ±15V, VCM = 0V, unless otherwise noted. (Note 10)

elecTrical characTerisTics

SYMBOL PARAMETER CONDITIONS (Note 4)

LT1113AC LT1113C

UNITSMIN TYP MAX MIN TYP MAX

VOS Input Offset Voltage VS = ±5V

l

l

0.7 0.8

2.4 2.6

0.8 0.9

2.8 3.0

mV mV

∆VOS ∆Temp

Average Input Offset Voltage Drift

l 7 15 8 20 µV/°C

IOS Input Offset Current l 80 700 90 1000 pA

IB Input Bias Current l 1750 3000 1800 5000 pA

VCM Input Voltage Range l

l

12.6 –10.0

13.0 –10.5

12.6 –10.0

13.0 –10.5

V V

CMRR Common Mode Rejection Ratio VCM = –10V to 12.6V l 80 96 78 93 dB

PSRR Power Supply Rejection Ratio VS = ±4.5V to ±20V l 81 98 79 96 dB

AVOL Large-Signal Voltage Gain VO = ±12V, RL = 10k VO = ±10V, RL = 1k

l

l

850 400

3300 2200

750 300

3000 2000

V/mV V/mV

VOUT Output Voltage Swing RL = 10k RL = 1k

l

l

±13.0 ±11.5

±12.5 ±12.0

±12.5 ±11.0

±12.5 ±12.0

V V

SR Slew Rate RL ≥ 2k l 2.0 3.5 1.6 3.5 V/µs

GBW Gain Bandwidth Product fO = 100kHz l 2.9 4.3 2.9 4.3 MHz

Page 5: LT1113 – Dual Low Noise, Precision, JFET Input Op …The LT®1113 achieves a new standard of excellence in noise performance for a dual JFET op amp. The 4.5nV/√Hz 1kHz noise combined

LT1113

51113fc

For more information www.linear.com/LT1113

The l denotes specifications which apply over the temperature range –40°C ≤ TA ≤ 85°C. VS = ±15V, VCM = 0V, unless otherwise noted. (Note 10)

The l denotes specifications which apply over the temperature range –55°C ≤ TA ≤ 125°C. VS = ±15V, VCM = 0V, unless otherwise noted. (Note 12)

elecTrical characTerisTics

SYMBOL PARAMETER CONDITIONS (Note 4)

LT1113AM LT1113M

UNITSMIN TYP MAX MIN TYP MAXVOS Input Offset Voltage

VS = ±5Vl

l

0.8 0.8

2.7 2.8

0.9 0.9

3.3 3.4

mV mV

∆VOS ∆Temp

Average Input Offset Voltage Drift

(Note 8) l 5 12 8 15 µV/°C

IOS Input Offset Current l 0.8 15 1.0 25 nA

IB Input Bias Current l 25 50 27 70 nA

VCM Input Voltage Range l

l

12.6 –10.0

13.0 –10.4

12.6 –10.0

13.0 –10.4

V V

CMRR Common Mode Rejection Ratio VCM = –10V to 12.6V l 79 95 77 92 dB

PSRR Power Supply Rejection Ratio VS = ±4.5V to ±20V l 80 97 78 95 dB

AVOL Large-Signal Voltage Gain VO = ±12V, RL = 10k VO = ±10V, RL = 1k

l

l

800 400

2700 1500

700 300

2500 1000

V/mV V/mV

VOUT Output Voltage Swing RL = 10k RL = 1k

l

l

±13.0 ±11.5

±12.5 ±12.0

±12.5 ±11.0

±12.5 ±12.0

V V

SR Slew Rate RL ≥ 2k (Note 9) l 1.9 3.3 1.6 3.3 V/µs

GBW Gain Bandwidth Product fO = 100kHz l 2.2 3.4 2.2 3.4 MHz

IS Supply Current Per Amplifier VS = ±5V

l

l

5.30 5.25

6.35 6.30

5.30 5.25

6.55 6.50

mA mA

∆VOS Offset Voltage Match l 1.0 5.0 1.0 5.5 mV

∆IB+ Noninverting Bias Current Match l 1.8 12 2.0 20 nA

∆CMRR Common Mode Rejection Match (Note 11) l 75 92 73 92 dB

∆PSRR Power Supply Rejection Match (Note 11) l 76 91 74 91 dB

Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime.Note 2: The LT1113C is guaranteed functional over the Operating Temperature Range of –40°C to 85°C. The LT1113M is guaranteed functional over the Operating Temperature Range of –55°C to 125°C.Note 3: The LT1113C is guaranteed to meet specified performance from 0°C to 70°C. The LT1113C is designed, characterized and expected to meet specified performance from –40°C to 85°C but is not tested or QA sampled at these temperatures. For guaranteed I grade parts, consult the

factory. The LT1113M is guaranteed to meet specified performance from –55°C to 125°C.Note 4: Typical parameters are defined as the 60% yield of parameter distributions of individual amplifiers, i.e., out of 100 LT1113s (200 op amps) typically 120 op amps will be better than the indicated specification.Note 5: Warmed-up IB and IOS readings are extrapolated to a chip temperature of 50°C from 25°C measurements and 50°C characterization data.Note 6: Current noise is calculated from the formula: in = (2qIB)1/2

where q = 1.6 • 10 –19 coulomb. The noise of source resistors up to 200M swamps the contribution of current noise.

SYMBOL PARAMETER CONDITIONS (Note 4)

LT1113AC LT1113C

UNITSMIN TYP MAX MIN TYP MAX

IS Supply Current per Amplifier VS = ±5V

l

l

5.30 5.25

6.35 6.30

5.30 5.25

6.55 6.50

mA mA

∆VOS Offset Voltage Match l 1.0 4.4 1.0 5.1 mV

∆IB+ Noninverting Bias Current Match l 50 600 55 900 pA

∆CMRR Common Mode Rejection Match (Note 11) l 76 93 73 93 dB

∆PSRR Power Supply Rejection Match (Note 11) l 77 92 75 92 dB

Page 6: LT1113 – Dual Low Noise, Precision, JFET Input Op …The LT®1113 achieves a new standard of excellence in noise performance for a dual JFET op amp. The 4.5nV/√Hz 1kHz noise combined

LT1113

61113fc

For more information www.linear.com/LT1113

Typical perForMance characTerisTics

Voltage Noise vs Frequency

Input Bias and Offset Currents Over the Common Mode Range

1kHz Output Voltage Noise Density vs Source Resistance

Voltage Noise vsChip Temperature

Input Bias and Offset Currents vs Chip Temperature

0.1Hz to 10Hz Voltage Noise

TIME (SEC)0

VOLT

AGE

NOIS

E (1

µV/D

IV)

8

1113 G01

2 4 6 10

SOURCE RESISTANCE (Ω)

10k

1k

100

10

1100 10k 100k 1M1k 10M

1113 G02

100M 1G

+VN

RSOURCE

TA = 25°CVS = ±15V

VNSOURCERESISTANCEONLY

TOTA

L 1k

Hz V

OLTA

GE N

OISE

DEN

SITY

(nV/

√Hz)

FREQUENCY (Hz)

11 10 1k

10

100

100 10k

1113 G03

RMS

VOLT

AGE

NOIS

E DE

NSIT

Y (n

V/√H

z)TYPICAL

TA = 25°CVS = ±15V

1/f CORNER120Hz

TEMPERATURE (°C)–75

10

9

8

7

6

5

4

3

2

1

0–25 50 75

1113 G04

–50 25 100 1250

VOLT

AGE

NOIS

E (A

T1kH

z)(n

V/√H

z)

VS = ±15V

TEMPERATURE (°C)–75

100n

30n

10n

3n

1n

300p

100p

30p

10p

3p

1p–25 50 75

1113 G05

–50 25 100 1250

INPU

T BI

AS A

ND O

FFSE

T CU

RREN

TS (A

) VS = ±15V

IB, VCM = 10V

IOS, VCM = 0V

IB, VCM = 0V

IOS, VCM = 10V

COMMON MODE RANGE (V)–15

INPU

T BI

AS A

ND O

FFSE

T CU

RREN

TS (p

A)

400

300

200

100

0–10 –5 0 5

1113 G06

10 15

TA = 25°CVS = ±15VNOT WARMED UP

OFFSET CURRENT

BIAS CURRENT

elecTrical characTerisTicsNote 7: Input voltage range functionality is assured by testing offset voltage at the input voltage range limits to a maximum of 2.3mV (A grade) to 2.8mV (C grade).Note 8: This parameter is not 100% tested.Note 9: Slew rate is measured in AV = –1; input signal is ±7.5V, output measured at ±2.5V.Note 10: The LT1113 is designed, characterized and expected to meet these extended temperature limits, but is not tested at –40°C and 85°C. Guaranteed I grade parts are available. Consult factory.

Note 11: ∆CMRR and ∆PSRR are defined as follows: (1) CMRR and PSRR are measured in µV/V on the individual amplifiers. (2) The difference is calculated between the matching sides in µV/V. (3) The result is converted to dB.

Note 12: The LT1113 is measured in an automated tester in less than one second after application of power. Depending on the package used, power dissipation, heat sinking, and air flow conditions, the fully warmed-up chip temperature can be 10°C to 50°C higher than the ambient temperature.

Page 7: LT1113 – Dual Low Noise, Precision, JFET Input Op …The LT®1113 achieves a new standard of excellence in noise performance for a dual JFET op amp. The 4.5nV/√Hz 1kHz noise combined

LT1113

71113fc

For more information www.linear.com/LT1113

Typical perForMance characTerisTicsCommon Mode Limit vs Temperature

Power Supply Rejection Ratiovs Frequency

Common Mode Rejection Ratio vs Frequency

Voltage Gain vs FrequencyVoltage Gain vsChip Temperature

Gain and Phase Shift vs Frequency

Small-Signal Transient Response Large-Signal Transient Response Supply Current vs Supply Voltage

TEMPERATURE (°C)–60

COM

MON

MOD

E LI

MIT

(V)

REFE

RRED

TO

POW

ER S

UPPL

Y

V+ –0

–0.5

–1.0

–1.5

–2.0

4.0

3.5

3.0

2.5

V– +2.0100

1113 G07

–20 20 60 140

V+ = 5V TO 20V

V – = –5V TO –20V

FREQUENCY (Hz)

COM

MON

-MOD

E RE

JECT

ION

RATI

O (d

B)

120

100

80

60

40

20

01k 100k 1M 10M

1113 G08

10k

TA = 25°CVS = ±15V

FREQUENCY (Hz)10

POW

ER S

UPPL

Y RE

JECT

ION

RATI

O (d

B)

120

100

80

60

40

20

0100 1k 10k 100k

1113 G09

1M 10M

TA = 25°C

+PSRR

–PSRR

FREQUENCY (Hz)0.01

VOLT

AGE

GAIN

(dB)

180

140

100

60

20

–201M

1113 G10

1 100 10k 100M

TA = 25°CVS = ±15V

FREQUENCY (MHz)0.1

VOLT

AGE

GAIN

(dB)

50

40

30

20

10

0

–101 10 100

1113 G12

TA = 25°CVS = ±15VCL = 10pF

60

80

100

120

140

160

180

PHASE

GAIN

PHASE SHIFT (DEG)

SUPPLY VOLTAGE (V)0

SUPP

LY C

URRE

NT P

ER A

MPL

IFIE

R (m

A)

±20

1113 G15

±5 ±10 ±15

6

5

4

25°C

–55°C

125°C

AV = 1CL = 10pFVS = ±15V, ±5V

20m

V/DI

V

1µs/DIV

1113 G13

AV = 1CL = 10pFVS = ±15V

5V/D

IV

2µs/DIV

1113 G14

CHIP TEMPERATURE (°C)–75

10

9

8

7

6

5

4

3

2

1

0–25 50 75

1113 G11

–50 25 100 1250

VS = ±15VVO = ±10V, RL = 1kVO = ±12V, RL = 10k

VOLT

AGE

GAIN

(V/µ

V)

RL =10k

RL = 1k

Page 8: LT1113 – Dual Low Noise, Precision, JFET Input Op …The LT®1113 achieves a new standard of excellence in noise performance for a dual JFET op amp. The 4.5nV/√Hz 1kHz noise combined

LT1113

81113fc

For more information www.linear.com/LT1113

Typical perForMance characTerisTics

Distribution of Offset Voltage Drift with Temperature (J8)

Distribution of Offset Voltage Drift with Temperature (N8, S8)

THD and Noise vs Frequency for Noninverting Gain Channel Separation vs Frequency

Warm-Up Drift

THD and Noise vs Frequency for Inverting Gain

–12 –10 –8 –2 0 4 6 8–40

10

20

30

40

PERC

ENT

OF U

NITS

OFFSET VOLTAGE DRIFT WITH TEMPERATURE (µV/°C)1113 G19

VS = ±15V

150 OP AMPS75 J8

2–6 –25 –20 –15 0 5 15 20 25–50

10

20

30

40

PERC

ENT

OF U

NITS

OFFSET VOLTAGE DRIFT WITH TEMPERATURE (µV/°C)1113 G20

VS = ±15V

10–10

356 OP AMPS100 N8

78 S8

TIME AFTER POWER ON (MINUTES)0

CHAN

GE IN

OFF

SET

VOLT

AGE

(µV)

500

400

300

200

100

01 2 3 5

1113 G21

4

VS = ±15VTA = 25°C S8 PACKAGE

J8 PACKAGE

N8 PACKAGE

IN STILL AIR (S8 PACKAGESOLDERED ONTO BOARD)

6

FREQUENCY (Hz)

TOTA

L HA

RMON

IC D

ISTO

RTIO

N +

NOIS

E (%

)

20 1k 10k 20k

1113 • G22

100

1

0.1

0.01

0.001

0.0001

ZL = 2k||15pFVO = 20VP-PAV = +1, +10, +100MEASUREMENT BANDWIDTH= 10Hz TO 80kHz

NOISE FLOOR

AV = 1

AV = 100

AV = 10

FREQUENCY (Hz)

TOTA

L HA

RMON

IC D

ISTO

RTIO

N +

NOIS

E (%

)

20 1k 10k 20k

1113 G23

100

ZL = 2k||15pFVO = 20VP-PAV = –1, –10, –100MEASUREMENT BANDWIDTH= 10Hz TO 80kHz

AV = –1

1

0.1

0.01

0.001

0.0001

AV = –100

AV = –10

NOISE FLOOR

FREQUENCY (Hz)10

0

CHAN

NEL

SEPA

RATI

ON (d

B)

20

60

80

120

160

100 10k 100k 10M

1113 G24

1k 1M

40

100

140

VS = ±15VRL = 1kVO = 10VP-PTA = 25°C

LIMITED BY THERMAL INTERACTION

LIMITED BYPIN-TO-PIN

CAPACITANCE

*See LT1115 data sheet for definition of CCIF testing.

Output Voltage Swing vsLoad Current Capacitive Load Handling

Slew Rate and Gain Bandwidth Product vs Temperature

OUTPUT CURRENT (mA)–10

OUTP

UT V

OLTA

GE S

WIN

G (V

)

V+ –0.8

–1.0

–1.2

–1.4

–1.6

1.4

1.2

1.0

0.8

0.6

V– +0.46

1113 G16

–8 –2 2 10–6 –4 0 4 8

25°C

–55°C

125°C

–55°C

25°C125°C

VS = ±5V TO ±20V

ISINK ISOURCE CAPACITIVE LOAD (pF)0.1

OVER

SHOO

T (%

)

50

40

30

20

10

01000

1113 G17

1 10 100 10000

VS = ±15VTA = 25°CRL ≥ 10kVO = 100mVP-PAV = +10, RF = 10k, CF = 20pF

AV = 1

AV = 10

TEMPERATURE (°C)–75

6

5

4

3

2

1

0–25 50 75

1113 G18

–50 25 100 1250

SLEW

RAT

E (V

/µs) SLEW RATE

GBW

12

10

8

6

4

2

0

GAIN BANDWIDTH PRODUCT (fO = 100kHz)(M

Hz)

Page 9: LT1113 – Dual Low Noise, Precision, JFET Input Op …The LT®1113 achieves a new standard of excellence in noise performance for a dual JFET op amp. The 4.5nV/√Hz 1kHz noise combined

LT1113

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Typical perForMance characTerisTicsTHD and Noise vs Output Amplitude for Noninverting Gain

THD and Noise vs Output Amplitude for Inverting Gain

CCIF IMD Test (Equal Amplitude Tones at 13kHz, 14kHz)*

OUTPUT SWING (VP-P)

TOTA

L HA

RMON

IC D

ISTO

RTIO

N +

NOIS

E (%

) 1

0.1

0.01

0.001

0.00010.3 10 30

1113 • G25

1

AV = 1

ZL = 2k||15pF, fO = 1kHzAV = +1, +10, +100MEASUREMENT BANDWIDTH= 10Hz TO 22kHz

AV = 100

AV = 10

NOISE FLOOR

OUTPUT SWING (VP-P)

TOTA

L HA

RMON

IC D

ISTO

RTIO

N +

NOIS

E (%

) 1

0.1

0.01

0.001

0.00010.3 10 30

1113 • G26

1

ZL = 2k||15pF, fO = 1kHzAV = –1, –10, –100MEASUREMENT BANDWIDTH= 10Hz TO 22kHz

AV = –1

AV = –100

AV = –10

NOISE FLOOR

0.001

OUTPUT SWING (VP-P)

INTE

RMOD

ULAT

ION

DIST

ORTI

ON (A

T 1k

Hz)(

%)

20m 1 30

1113 • G27

0.1

0.0001

VS = ±15VRL = 2kTA = 25°C

0.01

0.1 10

AV = ±10

applicaTions inForMaTionimpedance increases due to higher current noise. The low voltage noise of the LT1113 allows it to surpass every dual and most single JFET op amps available. For the best performance versus area available anywhere, the LT1113 is offered in the narrow SO-8 surface mount package with standard pinout and no degradation in performance.

The low voltage and current noise offered by the LT1113 makes it useful in a wide range of applications, especially where high impedance, capacitive transducers are used such as hydrophones, precision accelerometers and photo diodes. The total output noise in such a system is the gain times the RMS sum of the op amp input referred voltage noise, the thermal noise of the transducer, and the op amp bias current noise times the transducer impedance. Figure 1 shows total input voltage noise versus source resistance. In a low source resistance (<5k) application the op amp voltage noise will dominate the total noise. This means the LT1113 will beat out any dual JFET op amp, only the lowest noise bipolar op amps have the edge (at low source resistances). As the source resistance increases from 5k to 50k, the LT1113 will match the best bipolar op amps for noise performance, since the thermal noise of the transducer (4kTR) begins to dominate the total noise. A further increase in source resistance, above 50k, is where the op amp’s current noise component

The LT1113 dual in the plastic and ceramic DIP packages are pin compatible with and directly replace such JFET op amps as the OPA2111 and OPA2604 with improved noise performance. Being the lowest noise dual JFET op amp available to date, the LT1113 can replace many bipolar op amps that are used in amplifying low level signals from high impedance transducers. The best bipolar op amps will eventually loose out to the LT1113 when transducer

Figure 1. Comparison of LT1113 and LT1124 Total Output 1kHz Voltage Noise Versus Source Resistance

SOURCE RESISTANCE (Ω)

1

10

1k

1k100 100M1113 • F01

100k

100

10M10k 1M

RESISTOR NOISE ONLY

INPU

T NO

ISE

VOLT

AGE

(nV√

Hz)

+

CSRS

VO

CS

RS

LT1124LT1113

LT1124*

LT1113*

SOURCE RESISTANCE = 2RS = R* PLUS RESISTOR† PLUS RESISTOR | | 1000pF CAPACITOR

LT1113†

LT1124†

Vn = AV √Vn2(OP AMP) + 4kTR + 2q IB • R2

SOURCE RESISTANCE (Ω)

1

10

1k

1k100 100M1113 • F01

100k

100

10M10k 1M

RESISTOR NOISE ONLY

INPU

T NO

ISE

VOLT

AGE

(nV√

Hz)

+

CSRS

VO

CS

RS

LT1124LT1113

LT1124*

LT1113*

SOURCE RESISTANCE = 2RS = R* PLUS RESISTOR† PLUS RESISTOR | | 1000pF CAPACITOR

LT1113†

LT1124†

Vn = AV √Vn2(OP AMP) + 4kTR + 2q IB • R2

Page 10: LT1113 – Dual Low Noise, Precision, JFET Input Op …The LT®1113 achieves a new standard of excellence in noise performance for a dual JFET op amp. The 4.5nV/√Hz 1kHz noise combined

LT1113

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For more information www.linear.com/LT1113

applicaTions inForMaTion

(2qIB RTRANS) will eventually dominate the total noise. At these high source resistances, the LT1113 will out perform the lowest noise bipolar op amp due to the inherently low current noise of FET input op amps. Clearly, the LT1113 will extend the range of high impedance transducers that can be used for high signal to noise ratios. This makes the LT1113 the best choice for high impedance, capacitive transducers.

The high input impedance JFET front end makes the LT1113 suitable in applications where very high charge sensitivity is required. Figure 2 illustrates the LT1113 in its inverting and noninverting modes of operation. A charge amplifier is shown in the inverting mode example; here the gain depends on the principal of charge conservation at the input of the LT1113. The charge across the transducer capacitance, CS, is transferred to the feedback capacitor CF, resulting in a change in voltage, dV, equal to dQ/CF. The gain therefore is 1 + CF/CS. For unity gain, CF should equal the transducer capacitance plus the input capacitance of the LT1113 and RF should equal RS. In the noninvert-ing mode example, the transducer current is converted to a change in voltage by the transducer capacitance; this voltage is then buffered by the LT1113 with a gain of 1 + R1/R2. A DC path is provided by RS, which is either the transducer impedance or an external resistor. Since RS is usually several orders of magnitude greater than the

parallel combination of R1 and R2, RB is added to balance the DC offset caused by the noninverting input bias current and RS. The input bias currents, although small at room temperature, can create significant errors over increasing temperature, especially with transducer resistances of up to 100M or more. The optimum value for RB is determined by equating the thermal noise (4kTRS) to the current noise (2qIB) times RS

2. Solving for RS results in RB = RS = 2VT/IB

VT =

kTq

= 26mV at 25°C

A parallel capacitor, CB, is used to cancel the phase shift caused by the op amp input capacitance and RB.

Reduced Power Supply Operation

The LT1113 can be operated from ±5V supplies for lower power dissipation resulting in lower IB and noise at the expense of reduced dynamic range. To illustrate this benefit, let’s look at the following example:

An LT1113CS8 operates at an ambient temperature of 25°C with ±15V supplies, dissipating 318mW of power (typical supply current = 10.6mA for the dual). The SO-8 package has a θJA of 190°C/W, which results in a die temperature increase of 60.4°C or a room temperature die operating temperature of 85.4°C. At ±5V supplies, the die tempera-

Figure 2. Noninverting and Inverting Gain Configurations

+

R2

OUTPUT

RB

CB

R1

CS RS

CB ≅ CSRB = RSRS > R1 OR R2

TRANSDUCER

+OUTPUT

CF

CB RB

CB = CF||CSRB = RF||RS

RF

CS RS

TRANSDUCER

1113 • F02

Q = CV; = I = CdQdt

dVdt

Page 11: LT1113 – Dual Low Noise, Precision, JFET Input Op …The LT®1113 achieves a new standard of excellence in noise performance for a dual JFET op amp. The 4.5nV/√Hz 1kHz noise combined

LT1113

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ture increases by only one third of the previous amount or 20.1°C resulting in a typical die operating temperature of only 45.1°C. A 40 degree reduction of die temperature is achieved at the expense of a 20V reduction in dynamic range. If no DC correction resistor is used at the input, the input referred offset will be the input bias current at the operating die temperature times the transducer resistance (refer to Input Bias and Offset Currents vs Chip Temperature graph in Typical Performance Characteristics section). A 100mV input VOS is the result of a 1nA IB (at 85°C) dropped across a 100M transducer resistance; at ±5V supplies, the input offset is only 28mV (IB at 45°C is 280pA). Careful selection of a DC correction resistor (RB) will reduce the IR errors due to IB by an order of magnitude. A further reduction of IR errors can be achieved by using a DC servo circuit shown in the applications section of this data sheet. The DC servo has the advantage of reducing a wide range of IR errors to the millivolt level over a wide temperature variation. The preservation of dynamic range is especially important when reduced supplies are used, since input bias currents can exceed the nanoamp level for die temperatures over 85°C.

To take full advantage of a wide input common mode range, the LT1113 was designed to eliminate phase reversal. Re-ferring to the photographs shown in Figure 3, the LT1113 is shown operating in the follower mode (AV = +1) at ±5V supplies with the input swinging ±5.2V. The output of the

LT1113 clips cleanly and recovers with no phase reversal, unlike the competition as shown by the last photograph. This has the benefit of preventing lock-up in servo systems and minimizing distortion components. The effect of input and output overdrive on one amplifier has no effect on the other, as each amplifier is biased independently.

Advantages of Matched Dual Op Amps

In many applications the performance of a system depends on the matching between two operational ampli-fiers rather than the individual characteristics of the two op amps. Two or three op amp instrumentation amplifiers, tracking voltage references and low drift active filters are some of the circuits requiring matching between two op amps.

The well-known triple op amp configuration in Figure 4 illustrates these concepts. Output offset is a function of the difference between the two halves of the LT1113. This error cancellation principle holds for a considerable number of input referred parameters in addition to offset voltage and bias current. Input bias current will be the average of the two noninverting input currents (IB+). The difference between these two currents (∆IB+) is the offset current of the instrumentation amplifier. Common mode and power supply rejections will be dependent only on the match between the two amplifiers (assuming perfect resistor matching).

INPUT: ±5.2V Sine Wave LT1113 Output OPA2111 Output

Figure 3. Voltage Follower with Input Exceeding the Common Mode Range ( VS = ±5V)

applicaTions inForMaTion

Page 12: LT1113 – Dual Low Noise, Precision, JFET Input Op …The LT®1113 achieves a new standard of excellence in noise performance for a dual JFET op amp. The 4.5nV/√Hz 1kHz noise combined

LT1113

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Typical performance of the instrumentation amplifier:

Input offset voltage = 0.8mV

Input bias current = 320pA

Input offset current = 10pA

Input resistance = 1011Ω

Input noise = 3.4µVP-P

High Speed Operation

The low noise performance of the LT1113 was achieved by making the input JFET differential pair large to maxi-mize the first stage gain. Increasing the JFET geometry also increases the parasitic gate capacitance, which if left unchecked, can result in increased overshoot and ringing. When the feedback around the op amp is resistive (RF), a pole will be created with RF, the source resistance and capacitance (RS,CS), and the amplifier input capacitance (CIN = 27pF). In closed loop gain configurations and with RS and RF in the kilohm range (Figure 5), this pole can create excess phase shift and even oscillation. A small capacitor (CF) in parallel with RF eliminates this problem. With RS(CS + CIN) = RFCF, the effect of the feed-back pole is completely removed.

The concepts of common mode and power supply rejection ratio match (∆CMRR and ∆PSRR) are best dem-onstrated with a numerical example:

Assume CMRRA = +50µV/V or 86dB,

and CMRRB = + 39µV/V or 88dB,

then ∆CMRR = 11µV/V or 99dB;

if CMRRB = –39µV/V which is still 88dB,

then ∆CMRR = 89µV/V or 81dB

Clearly the LT1113, by specifying and guaranteeing all of these matching parameters, can significantly improve the performance of matching-dependent circuits.

applicaTions inForMaTion

+

1113 • F05

OUTPUT

RF

RS CS

CIN

CF

Figure 5.

Figure 4. Three Op Amp Instrumentation Amplifier

4

OUTPUT

C150pF

R710k

R610k

1113 • F04

GAIN =BANDWIDTH =

INPUT REFERRED NOISE =WIDEBAND NOISE DC TO 400kHz =

CL ≤

100 400kHz 6.6nV/√Hz AT 1kHz 6.6 µVRMS 0.01µF

IN–

15V

8

1

–15V

+

+1/2

LT1113IC1

1/2LT1113

IC1IN+

R31k

R2200Ω

R11k

7

6

5

3

2

R41k

1

2

CL

3

+

1/2LT1113

IC2

R51k

Page 13: LT1113 – Dual Low Noise, Precision, JFET Input Op …The LT®1113 achieves a new standard of excellence in noise performance for a dual JFET op amp. The 4.5nV/√Hz 1kHz noise combined

LT1113

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Typical applicaTions

Accelerometer Amplifier with DC Servo

Paralleling Amplifiers to Reduce Voltage Noise

1. ASSUME VOLTAGE NOISE OF LT1113 AND 51Ω SOURCE RESISTOR = 4.6nV/√Hz2. GAIN WITH n LT1113s IN PARALLEL = n • 2003. OUTPUT NOISE = √n • 200 • 4.6nV/√Hz

4. INPUT REFERRED NOISE = OUTPUT NOISE = 4.6 nV/√Hz n • 200 √n5. NOISE CURRENT AT INPUT INCREASES √n TIMES

6. IF n = 5, GAIN = 1000, BANDWIDTH = 1MHz, RMS NOISE, DC TO 1MHz = 9µV = 4µV √5

8

15V

–15V

4

8

15V

–15V

4

1113 • TA04

1k7

6

5

1k

1k1

2

3

+A2

1/2 LT1113

+1k

51Ω

51Ω

51Ω

1

2

3

A11/2 LT1113

10k

7

5

6 –

+1/2 LT1113

+An

1/2 LT1113

1k

1k

OUTPUT

8

5V TO 15V

–5V TO –15V

41113 • TA03

OUTPUT

R1100M

C11250pF

R32k

C32µF

R218k

C22µF

6

5

R420M–

+

1/2 LT11137 R5

20M

ACCELEROMETERB & K MODEL 4381

OR EQUIVALENT 1

3

2 –

+1/2 LT1113

R4C2 = R5C3 > R1 (1 + R2/R3) C1OUTPUT = 0.8mV/pC* = 8.0mV/g**DC OUTPUT ≤ 2.7mVOUTPUT NOISE = 6nV/√Hz AT 1kHz

*PICOCOULOMBS**g = EARTH’S GRAVITATIONAL CONSTANT

Page 14: LT1113 – Dual Low Noise, Precision, JFET Input Op …The LT®1113 achieves a new standard of excellence in noise performance for a dual JFET op amp. The 4.5nV/√Hz 1kHz noise combined

LT1113

141113fc

For more information www.linear.com/LT1113

Typical applicaTions

8

+V

–V

4

1113 • TA05

R11M

C12pF

7

5

6–

+

1/2 LT1113

R2C2 > C1R1CD = PARASITIC PHOTODIODE CAPACITANCEVO = 100mV/µWATT FOR 200nm WAVE LENGTH 330mV/µWATT FOR 633nm WAVE LENGTH

R51k

D21N914

2N3904

V–

R41k

D11N914

R31k

1

3

2 –

+1/2 LT1113

C20.022µF

HAMAMATSUS1336-5BK

OUTPUT

R2100k

CD

1113 • TA06

VOUT

TYPICAL OFFSET ≈ 0.8mV1% TOLERANCESFOR VIN = 10VP-P, VOUT = –121dB AT f > 330Hz = – 6dB AT f = 16.3HzLOWER RESISTOR VALUES WILL RESULT IN LOWER THERMAL NOISE AND LARGER CAPACITORS

R3249k

C2100nF

C133nF

R1237k

VIN

R2237k

R6249k

C4330nF 5

6 –

+1/2 LT1113

7

C310nF

R4154k

R5154k

8

15V

–15V

4

1

3

2 –

+1/2 LT1113

Low Noise Light Sensor with DC Servo

10Hz Fourth Order Chebyshev Lowpass Filter (0.01dB Ripple)

Page 15: LT1113 – Dual Low Noise, Precision, JFET Input Op …The LT®1113 achieves a new standard of excellence in noise performance for a dual JFET op amp. The 4.5nV/√Hz 1kHz noise combined

LT1113

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OBSOLETE PACKAGE

package DescripTion

J8 1298

0.014 – 0.026(0.360 – 0.660)

0.200(5.080)

MAX

0.015 – 0.060(0.381 – 1.524)

0.1253.175MIN

0.100(2.54)BSC

0.300 BSC(0.762 BSC)

0.008 – 0.018(0.203 – 0.457)

0° – 15°

0.045 – 0.068(1.143 – 1.727)

FULL LEADOPTION

0.023 – 0.045(0.584 – 1.143)

HALF LEADOPTION

CORNER LEADS OPTION (4 PLCS)

0.045 – 0.065(1.143 – 1.651)

0.005(0.127)

MIN

0.405(10.287)

MAX

0.220 – 0.310(5.588 – 7.874)

1 2 3 4

8 7 6 5

0.025(0.635)

RAD TYP

NOTE: LEAD DIMENSIONS APPLY TO SOLDER DIP/PLATE OR TIN PLATE LEADS

N8 REV I 0711

.065(1.651)

TYP

.045 – .065(1.143 – 1.651)

.130 ±.005(3.302 ±0.127)

.020(0.508)

MIN.018 ±.003(0.457 ±0.076)

.120(3.048)

MIN

.008 – .015(0.203 – 0.381)

.300 – .325(7.620 – 8.255)

.325+.035–.015+0.889–0.3818.255( )

1 2 3 4

8 7 6 5

.255 ±.015*(6.477 ±0.381)

.400*(10.160)

MAX

NOTE:1. DIMENSIONS ARE

INCHESMILLIMETERS

*THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED .010 INCH (0.254mm)

.100(2.54)BSC

N Package8-Lead PDIP (Narrow .300 Inch)

(Reference LTC DWG # 05-08-1510 Rev I)

J8 Package8-Lead CERDIP (Narrow .300 Inch, Hermetic)

(Reference LTC DWG # 05-08-1110)

Please refer to http://www.linear.com/designtools/packaging/ for the most recent package drawings.

Page 16: LT1113 – Dual Low Noise, Precision, JFET Input Op …The LT®1113 achieves a new standard of excellence in noise performance for a dual JFET op amp. The 4.5nV/√Hz 1kHz noise combined

LT1113

161113fc

For more information www.linear.com/LT1113

package DescripTion

.016 – .050(0.406 – 1.270)

.010 – .020(0.254 – 0.508)

× 45°

0°– 8° TYP.008 – .010

(0.203 – 0.254)

SO8 REV G 0212

.053 – .069(1.346 – 1.752)

.014 – .019(0.355 – 0.483)

TYP

.004 – .010(0.101 – 0.254)

.050(1.270)

BSC

1 2 3 4

.150 – .157(3.810 – 3.988)

NOTE 3

8 7 6 5

.189 – .197(4.801 – 5.004)

NOTE 3

.228 – .244(5.791 – 6.197)

.245MIN .160 ±.005

RECOMMENDED SOLDER PAD LAYOUT

.045 ±.005 .050 BSC

.030 ±.005 TYP

INCHES(MILLIMETERS)

NOTE:1. DIMENSIONS IN

2. DRAWING NOT TO SCALE3. THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED .006" (0.15mm)4. PIN 1 CAN BE BEVEL EDGE OR A DIMPLE

S8 Package8-Lead Plastic Small Outline (Narrow .150 Inch)

(Reference LTC DWG # 05-08-1610 Rev G)

Please refer to http://www.linear.com/designtools/packaging/ for the most recent package drawings.

Page 17: LT1113 – Dual Low Noise, Precision, JFET Input Op …The LT®1113 achieves a new standard of excellence in noise performance for a dual JFET op amp. The 4.5nV/√Hz 1kHz noise combined

LT1113

171113fc

For more information www.linear.com/LT1113

REV DATE DESCRIPTION PAGE NUMBER

C 09/15 Updated Order Information table format.Updated package drawings.

215, 16

(Revision history begins at Rev C)revision hisTory

Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representa-tion that the interconnection of its circuits as described herein will not infringe on existing patent rights.

Page 18: LT1113 – Dual Low Noise, Precision, JFET Input Op …The LT®1113 achieves a new standard of excellence in noise performance for a dual JFET op amp. The 4.5nV/√Hz 1kHz noise combined

LT1113

181113fc

For more information www.linear.com/LT1113

Linear Technology Corporation1630 McCarthy Blvd., Milpitas, CA 95035-7417

LINEAR TECHNOLOGY CORPORATION 1993

LT 0915 REV C • PRINTED IN USA

(408) 432-1900 FAX: (408) 434-0507 www.linear.com/LT1113

relaTeD parTs

Typical applicaTion

PART NUMBER DESCRIPTION COMMENTS

LT1028 Single Low Noise Precision Op Amp VNOISE = 1.1nV/√Hz Max

LT1124 Dual Low Noise Precision Op Amp VNOISE = 4.2nV/√Hz Max

LT1169 Dual Low Noise Precision JFET Op Amp 10pA IBLT1462 Dual Picoamp IB C-Load™ Op Amp IB = 2pA Max, 10000pF C-Load, IS = 45µA

LT1464 Dual Picoamp IB C-Load Op Amp IB = 2pA Max, 10000pF C-Load, IS = 200µA

LT1792 Single Low Noise Precision Op Amp Single LT1113

LT1793 Single Low Noise Precision Op Amp Single LT1169

1113 • TA07

VOUT = 1M • (I1 – I2)PD1,PD2 = HAMAMATSU S1336-5BKWHEN EQUAL LIGHT ENTERS PHOTODIODES, VOUT < 3mV.–

+1/2 LT1113

R11M

C12pF TO 8pF

PD1

PD2

I1

I2

VOUT

Light Balance Detection Circuit

Unity Gain Buffer with Extended Load Capacitance Drive Capability

1113 • TA08

VOUT

+1/2 LT1113

C1

VIN

R21k

CL

R133Ω

C1 = CL ≤ 0.1µFOUTPUT SHORT-CIRCUIT CURRENT (~30mA) WILL LIMIT THE RATE AT WHICH THE VOLTAGE CAN CHANGE ACROSS LARGE CAPACITORS

(I = CdV) dt