LT1007/LT1037 Low Noise, High Speed Precision Operational ... · amplifiers: 2.5nV/ √Hz wideband...

1

LT1007/LT1037

sn100737 100737fbs

FEATURES DESCRIPTIO

U

APPLICATIO SU

TYPICAL APPLICATIO

U

Low Noise, High SpeedPrecision Operational Amplifiers

Guaranteed 4.5nV/√Hz 10Hz Noise Guaranteed 3.8nV/√Hz 1kHz Noise 0.1Hz to 10Hz Noise, 60nVP-P Typical Guaranteed 7 Million Min Voltage Gain, RL = 2k Guaranteed 3 Million Min Voltage Gain, RL = 600Ω Guaranteed 25µV Max Offset Voltage Guaranteed 0.6µV/°C Max Drift with Temperature Guaranteed 11V/µs Min Slew Rate (LT1037) Guaranteed 117dB Min CMRR

The LT®1007/LT1037 series features the lowest noiseperformance available to date for monolithic operationalamplifiers: 2.5nV/√Hz wideband noise (less than the noise ofa 400Ω resistor), 1/f corner frequency of 2Hz and 60nV peak-to-peak 0.1Hz to 10Hz noise. Low noise is combined withoutstanding precision and speed specifications: 10µV offsetvoltage, 0.2µV/°C drift, 130dB common mode and powersupply rejection, and 60MHz gain bandwidth product on thedecompensated LT1037, which is stable for closed-loopgains of 5 or greater.The voltage gain of the LT1007/LT1037 is an extremely high20 million driving a 2kΩ load and 12 million driving a 600Ωload to ±10V.In the design, processing and testing of the device, particularattention has been paid to the optimization of the entiredistribution of several key parameters. Consequently, thespecifications of even the lowest cost grades (the LT1007Cand the LT1037C) have been spectacularly improved com-pared to equivalent grades of competing amplifiers.The sine wave generator application shown below utilizes thelow noise and low distortion characteristics of the LT1037., LTC and LT are registered trademarks of Linear Technology Corporation.

Ultrapure 1kHz Sine Wave Generator

TIME (SEC)0 2 4 6 8 10

VOLT

AGE

NOIS

E (2

0nV/

DIV)

1007/37 TA02

Low Noise Signal Processing Microvolt Accuracy Threshold Detection Strain Gauge Amplifiers Direct Coupled Audio Gain Stages Sine Wave Generators Tape Head Preamplifiers Microphone Preamplifiers

1007/37 TA01

430Ω

OUTPUT

C

C R

R

6

2

3

#327 LAMP

–

+LT1037

f = 12πRC

R = 1591.5Ω ±0.1%C = 0.1µF ±0.1%

TOTAL HARMONIC DISTORTION = < 0.0025%NOISE = < 0.0001%AMPLITUDE = ±8VOUTPUT FREQUENCY = 1.000kHz FOR VALUES GIVEN ±0.4%

0.1Hz to 10Hz Noise

www.BDTIC.com/LINEAR

www.BDTIC.com/Linear

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LT1007/LT1037

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ABSOLUTE MAXIMUM RATINGS

W WW U

PACKAGE/ORDER INFORMATION

W UU

Supply Voltage ...................................................... ±22VInput Voltage ............................ Equal to Supply VoltageOutput Short-Circuit Duration .......................... IndefiniteDifferential Input Current (Note 9) ..................... ±25mAStorage Temperature Range ................. –65°C to 150°C

TOP VIEW

V+

VOS TRIM

VOSTRIM

–IN OUT

NC+IN

V– (CASE)

87

6

5

1

4

H PACKAGE8-LEAD TO-5 METAL CAN

–+

2

3

TJMAX = 150°C, θJA = 150°C/ W, θJC = 45°C/ W

1

2

3

4

8

7

6

5

TOP VIEW

VOSTRIM

VOSTRIMV+

OUT

NC

–IN

+IN

V–

–+

N8 PACKAGE8-LEAD PDIP

TOP VIEW

S8 PACKAGE8-LEAD PLASTIC SO

1

2

3

4

8

7

6

5

VOSTRIM

VOSTRIMV+

OUT

NC

–IN

+IN

V–

–

+

TJMAX = 150°C, θJA = 190°C/ W

ORDER PART NUMBER ORDER PART NUMBER ORDER PART NUMBER

10071007I

10371037I

LT1007ACN8LT1007CN8LT1007IN8

LT1037ACN8LT1037CN8LT1037IN8

LT1007ACHLT1007AMHLT1007CHLT1007MH

LT1037ACHLT1037AMHLT1037CHLT1037MH

TJMAX = 100°C, θJA = 130°C/ W (N8)

S8 PART MARKING

LT1007CS8LT1007IS8

LT1037CS8LT1037IS8

(Note 1)

Consult LTC Marketing for parts specified with wider operating temperature ranges.

Lead Temperature (Soldering, 10 sec.) ................. 300°COperating Temperature Range

LT1007/LT1037AC, C ............................. 0°C to 70°CLT1007/LT1037I ............................... –40°C to 85°CLT1007/LT1037AM, M (OBSOLETE) –55°C to 125°C

LT1007ACJ8LT1007AMJ8LT1007CJ8LT1007MJ8

LT1037ACJ8LT1037AMJ8LT1037CJ8LT1037MJ8

TJMAX = 150°C, θJA = 100°C/ W (J8)

J8 PACKAGELEAD CERDIP

OBSOLETE PACKAGE OBSOLETE PACKAGE

ELECTRICAL CHARACTERISTICS VS = ±15V, TA = 25°C, unless otherwise noted.

LT1007AC/AM LT1007C/I/MLT1037AC/AM LT1037C/I/M

SYMBOL PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS

VOS Input Offset Voltage (Note 2) 10 25 20 60 µV

∆VOS Long Term Input Offset (Notes 3, 4) 0.2 1.0 0.2 1.0 µV/Mo∆Time Voltage Stability

IOS Input Offset Current 7 30 12 50 nA

IB Input Bias Current ±10 ±35 ±15 ±55 nA

en Input Noise Voltage 0.1Hz to 10Hz (Notes 4, 6) 0.06 0.13 0.06 0.13 µVP-P

Input Noise Voltage Density fO = 10Hz (Notes 4, 5) 2.8 4.5 2.8 4.5 nV/√HzfO = 1000Hz (Note 4) 2.5 3.8 2.5 3.8 nV/√Hz

in Input Noise Current Density fO = 10Hz (Notes 4, 7) 1.5 4.0 1.5 4.0 pA/√HzfO = 1000Hz (Notes 4, 7) 0.4 0.6 0.4 0.6 pA/√Hz

Consider the N8 Package for Alternate Source Consider the N8 or S8 Package for Alternate Source



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LT1007/LT1037

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ELECTRICAL CHARACTERISTICS VS = ±15V, TA = 25°C, unless otherwise noted.

LT1007AC/AM LT1007C/I/MLT1037AC/AM LT1037C/I/M


Input Resistance, Common Mode 7 5 GΩInput Voltage Range ±11.0 ±12.5 ±11.0 ±12.5 V

CMRR Common Mode Rejection Ratio VCM = ±11V 117 130 110 126 dB

PSRR Power Supply Rejection Ratio VS = ±4V to ±18V 110 130 106 126 dB

AVOL Large-Signal Voltage Gain RL ≥ 2k, VO = ±12V 7.0 20.0 5.0 20.0 V/µVRL ≥ 1k, VO = ±10V 5.0 16.0 3.5 16.0 V/µVRL ≥ 600Ω, VO = ±10V 3.0 12.0 2.0 12.0 V/µV

VOUT Maximum Output Voltage Swing RL ≥ 2k ±13.0 ±13.8 ±12.5 ±13.5 VRL ≥ 600Ω ±11.0 ±12.5 ±10.5 ±12.5 V

SR Slew Rate LT1007 RL ≥ 2k 1.7 2.5 1.7 2.5 V/µsLT1037 AVCL ≥ 5 11 15 11 15 V/µs

GBW Gain Bandwidth LT1007 fO = 100kHz (Note 8) 5.0 8.0 5.0 8.0 MHzProduct LT1037 fO = 10kHz (Note 8) (AVCL ≥ 5) 45 60 45 60 MHz

ZO Open-Loop Output Resistance VO = 0V, IO = 0 70 70 ΩPD Power Dissipation LT1007 80 120 80 140 mW

LT1037 80 130 85 140 mW

LT1007AC LT1007CLT1037AC LT1037C



∆VOS Average Input Offset Drift (Note 10) 0.2 0.6 0.3 1.0 µV/°C∆TempIOS Input Offset Current 10 40 15 70 nA


Input Voltage Range ±10.5 ±11.8 ±10.5 ±11.8 V

CMRR Common Mode Rejection Ratio VCM = ±10.5V 114 126 106 120 dB

PSRR Power Supply Rejection Ratio VS = ±4.5V to ±18V 106 126 102 120 dB

AVOL Large-Signal Voltage Gain RL ≥ 2k, VO = ±10V 4.0 18.0 2.5 18.0 V/µVRL ≥ 1k, VO = ±10V 2.5 14.0 2.0 14.0 V/µV

VOUT Maximum Output Voltage Swing RL ≥ 2k ±12.5 ±13.6 ±12.0 ±13.6 V

PD Power Dissipation 90 144 90 160 mW

The denotes the specifications which apply over the temperature range 0°C ≤ TA ≤ 70°C, VS = ±15V, unless otherwise noted.



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LT1007/LT1037

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The denotes the specifications which apply over the temperature range –40°C ≤ TA ≤ 85°C, VS = ±15V, unless otherwise noted.

ELECTRICAL CHARACTERISTICS

For MIL-STD components, please refer to LTC 883C data sheet for testlisting and parameters.Note 1: Absolute Maximum Ratings are those values beyond which the lifeof a device may be impaired.Note 2: Input Offset Voltage measurements are performed by automatictest equipment approximately 0.5 seconds after application of power. AMand AC grades are guaranteed fully warmed up.Note 3: Long Term Input Offset Voltage Stability refers to the averagetrend line of Offset Voltage vs Time over extended periods after the first 30days of operation. Excluding the initial hour of operation, changes in VOSduring the first 30 days are typically 2.5µV. Refer to typical performancecurve.Note 4: This parameter is tested on a sample basis only.

Note 5: 10Hz noise voltage density is sample tested on every lot. Devices100% tested at 10Hz are available on request.Note 6: See the test circuit and frequency response curve for 0.1Hz to10Hz tester in the Applications Information section.Note 7: See the test circuit for current noise measurement in theApplications Information section.Note 8: This parameter is guaranteed by design and is not tested.Note 9: The inputs are protected by back-to-back diodes. Current limitingresistors are not used in order to achieve low noise. If differential inputvoltage exceeds ±0.7V, the input current should be limited to 25mA.Note 10: The Average Input Offset Drift performance is within thespecifications unnulled or when nulled with a pot having a range of 8kΩ to20kΩ.

The denotes the specifications which apply over the temperature range –55°C ≤ TA ≤ 125°C, VS = ±15V, unless otherwise noted.

LT1007I/LT1037ISYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS

VOS Input Offset Voltage (Note 2) 40 125 µV

∆VOS Average Input Offset Drift (Note 10) 0.3 1.0 µV/°C∆TempIOS Input Offset Current 20 80 nA

IB Input Bias Current ±25 ±90 nA

Input Voltage Range ±10 ±11.7 V

CMRR Common Mode Rejection Ratio VCM = ±10.5V 105 120 dB

PSRR Power Supply Rejection Ratio VS = ±4.5V to ±18V 101 120 dB

AVOL Large-Signal Voltage Gain RL ≥ 2k, VO = ±10V 2.0 15.0 V/µVRL ≥ 1k, VO = ±10V 1.5 12.0 V/µV

VOUT Maximum Output Voltage Swing RL ≥ 2k ±12.0 ±13.6 V

PD Power Dissipation 95 165 mW

LT1007AM/LT1037AM LT1007M/LT1037MSYMBOL PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS


∆VOS Average Input Offset Drift (Note 10) 0.2 0.6 0.3 1.0 µV/°C∆TempIOS Input Offset Current 15 50 20 85 nA


Input Voltage Range ±10.3 ±11.5 ±10.3 ±11.5 V

CMRR Common Mode Rejection Ratio VCM = ±10.3V 112 126 104 120 dB

PSRR Power Supply Rejection Ratio VS = ±4.5V to ±18V 104 126 100 120 dB

AVOL Large-Signal Voltage Gain RL ≥ 2k, VO = ±10V 3.0 14.0 2.0 14.0 V/µVRL ≥ 1k, VO = ±10V 2.0 10.0 1.5 10.0 V/µV

VOUT Maximum Output Voltage Swing RL ≥ 2k ±12.5 ±13.5 ±12.0 ±13.5 V

PD Power Dissipation 100 150 100 170 mW



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LT1007/LT1037

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TYPICAL PERFORMANCE CHARACTERISTICS

UW

VOLTAGE NOISE DENSITY (nV/√Hz)0

NUM

BER

OF U

NITS

140

120

100

80

60

40

20

01 5 7

1007/37 G01

4 9 102 3 6 8

VS = ±15VTA = 25°C497 UNITS MEASUREDFROM SIX RUNS

FREQUENCY (Hz)1

1

3

RMS

VOLT

AGE

NOIS

E DE

NSIT

Y (n

V/√H

z)

10

30

100

10 1000

1007/37 G02

0.1 100

VS = ±15VTA = 25°C

1/f CORNER = 2Hz

MAXIMUM

TYPICAL

Voltage Noise vs Frequency

0.01Hz to 1Hz Peak-to-Peak Noise

TIME (SEC)0 20 40 60 80 100

VOLT

AGE

NOIS

E (2

0nV/

DIV)

1007/37 G04

FREQUENCY (Hz)10

0.1

0.3

3

1

10

100 1k 10k

1007/37 G07

RMS

NOIS

E DE

NSIT

Y (p

A/√H

z)

1/f CORNER = 120Hz

MAXIMUM

TYPICAL

TEMPERATURE (°C)–50

5

4

3

2

1

00 50 75

1007/37 G06

–25 25 100 125

AT 10Hz

VS = ±15V

AT 1kHzRM

S VO

LTAG

E NO

ISE

DENS

ITY

(nV/

√Hz)

10Hz Voltage Noise Distribution

Total Noise vs Source Resistance Voltage Noise vs Temperature

SOURCE RESISTANCE (kΩ)0.1

1

10

100

1000

1 10 100

1007/37 G05

TOTA

L NO

ISE

DENS

ITY

(nV/

√Hz)

VS = ±15VTA = 25°C

SOURCE RESISTANCE = 2R

R

R

AT 1kHz

AT 10Hz

RESISTORNOISE ONLY

Current Noise vs Frequency

BANDWIDTH (kHz)0.1

0.01

RMS

VOLT

AGE

NOIS

E (µ

V)

0.1

1

10

1 10 100

1007/37 G08

Wideband Voltage Noise(0.1Hz to Frequency Indicated)

SUPPLY VOLTAGE (±V)0

5

4

3

2

1

020

1007/37 G09

5 10 15 25

RMS

VOLT

AGE

NOIS

E DE

NSIT

Y (n

V/√H

z)

AT 10Hz

TA = 25°C

AT 1kHz

Voltage Noise vs Supply Voltage

0.02Hz to 10Hz RMS Noise. Gain = 50,000(Measured on HP3582 Spectrum Analyzer)

MARKER AT 2Hz ( = 1/f CORNER) = 179µV/√Hz50,000

nV√Hz

= 3.59

1007/37 G03



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LT1007/LT1037

sn100737 100737fbs


UW

FREQUENCY (Hz)0.01

VOLT

AGE

GAIN

(dB)

180

160

140

120

100

80

60

40

20

0

–20

1007/37 G10

0.1 1 10 100 1k 10k 100k 1M 10M 100M

VS = ±15VTA = 25°CRL = 2k

LT1037LT1007

Voltage Gain, RL = 2k and 600Ω


OPEN

-LOO

P VO

LTAG

E GA

IN (V

/µV)

25

20

15

10

5

020

1007/37 G11

5 10 15 25

TA = 25°CRL = 2k

RL = 600Ω

TIME AFTER POWER ON (MINUTES)0

CHAN

GE IN

OFF

SET

VOLT

AGE

(µV)

10

8

6

4

2

04

1007/37 G15

1 2 3 5

VS = ±15VTA = 25°C

DUAL-IN-LINE PACKAGEPLASTIC (N8) OR CERDIP (J8)

METAL CAN (H) PACKAGE

Voltage Gain vs Frequency Voltage Gain vs Supply Voltage

Voltage Gain vs Load Resistance

LOAD RESISTANCE (kΩ)0.1 0.3 3

OPEN

-LOO

P VO

LTAG

E GA

IN (V

/µV)

25

20

15

10

5

01 10

1007/37 G13

VS = ±15VTA = 25°C

Warm-Up Drift

TEMPERATURE (°C)

VOLT

AGE

GAIN

(V/µ

V)

–50

25

20

15

10

5

00 50 75

1007/37 G14

–25 25 100 125

RL = 2k

RL = 1k

RL = 600Ω

VS = ±15VVOUT = ±10VVOUT = ±8V FORTA ≥ 100°C ANDRL = 600Ω

Voltage Gain vs Temperature

TIME (MONTHS)0

OFFS

ET V

OLTA

GE C

HANG

E (µ

V)

10

5

0

–5

–108

1007/37 G16

2 4 6 10

0.2µV/MONTH

0.2µV/MONTHTREND LINE

Long Term Stability of FourRepresentative Units


SUPP

LY C

URRE

NT (m

A)

20

1007/37 G18

5 10 15

4

3

2

1

0

125°C

25°C

–55°C

Supply Current vs Supply VoltageOffset Voltage Drift with Temperatureof Representative Units


OFFS

ET V

OLTA

GE (µ

V)

50

40

30

20

10

0

–10

–20

–30

–40

–500 50 75

1007/37 G17

–25 25 100 125

VS = ±15V

LT1007A/LT1037ALT1007/LT1037

–1

0

1 –1

0

1VS = ±15VTA = 25°C

INPU

T VO

LTAG

E (µ

V)

INPUT VOLTAGE (µV)

–15 –10 –5 0 5 10 15OUTPUT VOLTAGE (V)

MEASURED ON TEKTRONIX 178 LINEAR IC TESTER1007/37 G12

RL = 2k

RL = 600Ω



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LT1007/LT1037

sn100737 100737fbs


UW

FREQUENCY (Hz)

COM

MON

MOD

E RE

JECT

ION

RATI

O (d

B)

140

120

100

80

60

40103 105 106 107

1007/37 G19

104

VS = ±15VVCM = ±10VTA = 25°C

LT1037LT1007

Common Mode Rejection vsFrequency

Input Bias Current vsTemperature


INPU

T BI

AS C

URRE

NT (n

A)

1007/37 G22

0 50 100

50

40

30

20

10

0–25 25 75 125

VS = ±15V

LT1007MLT1037M

LT1007AMLT1037AM

TIME FROM OUTPUT SHORT TO GROUND (MINUTES)0

SHOR

T-CI

RCUI

T CU

RREN

T (m

A)SO

URCI

NGSI

NKIN

G

50

40

30

20

10

0

–10

–20

–30

–40

–501 2

1007/37 G27

3

–55°C

–55°C

125°C

125°C

25°C

25°C

VS = ±15V

Output Short-Circuit Currentvs Time

LOAD RESISTANCE (Ω)100 300 3k

OUTP

UT S

WIN

G (V

)

15

12

9

6

3

01k 10k

1007/37 G24

VS = ±15VTA = 25°C

POSITIVESWING

NEGATIVESWING

Output Swing vs Load Resistance

COMMON MODE INPUT VOLTAGE (V)–15 –10

INPU

T BI

AS C

URRE

NT (n

A)

–5 50 10 15

1007/37 G21

20

15

10

5

0

–5

–10

–15

–20

DEVICE WITH NEGATIVEINPUT CURRENT

DEVICE WITH POSITIVEINPUT CURRENT

VS = ±15VTA = 25°C RCM = ≈ 7G20V

3nA

Input Bias Current Over theCommon Mode Range


COM

MON

MOD

E LI

MIT

(V)

REFE

RRED

TO

POW

ER S

UPPL

Y

V+

–1

–2

–3

–4

+4

+3

+2

+1

V–

0 50 75

1007/37 G20

–25 25 100 125

V+ = 3V TO 20V

V– = –3V TO –20V

Common Mode Limit vsTemperature


INPU

T OF

FSET

CUR

RENT

(nA)

–50 0 25–25 50 75 100 125

1007/37 G23

60

50

40

30

20

10

0

VS = ±15V

LT1007MLT1037M

LT1007AMLT1037AM

Input Offset Current vsTemperature

Closed-Loop Output Impedance

FREQUENCY (Hz)10

OUTP

UT IM

PEDA

NCE

(Ω)

100

10

1

0.1

0.01

0.001100k

1007/37 G26

100 1k 10k 1M

VS = ±15VTA = 25°CIOUT = 1mA

AV = 1000 AV = 1000

AV = 1 AV = 5

LT1007LT1037

FREQUENCY (Hz)1

POW

ER S

UPPL

Y RE

JECT

ION

RATI

O (d

B)

1195 G25

10210 103 104 105 106 107 108

160

140

120

100

80

60

40

20

0

TA = 25°C

NEGATIVESUPPLY

POSITIVESUPPLY

PSRR vs Frequency



8

LT1007/LT1037

sn100737 100737fbs


UW


SLEW

RAT

E (V

/µs)

P

HASE

MAR

GIN

(DEG

) GAIN BANDWIDTH PROCUCT, fO = 10kHz (M

Hz)

70

60

50

20

15

10

70

60

50

0 50 75

1007/37 G30

–25 25 100 125

SLEW

GBW

VS = ±15VCL = 100pF

PHASE MARGIN

50mV

0V

–50mV

AVCL = 5VS = ±15VCL = 15pF 1007/37 G28

LT1037 Small-SignalTransient Response

LT1037 Phase Margin, GainBandwidth Product, Slew Rate vsTemperature

10V

0V

– 10V

AVCL = 5VS = ±15V 1007/37 G29

LT1037 Large-Signal Response

FREQUENCY (MHz)0.1

VOLT

AGE

GAIN

(dB)

40

30

20

10

0

–10

PHASE SHIFT (DEG)

90

100

110

120

130

140

150

160

170

180

1901 10 100

1007/37 G32

VS = ±15VTA = 25°CCL = 100pF

GAIN

PHASE


SLEW

RAT

E (V

/µs)

PHA

SE M

ARGI

N (D

EG)

GAIN BANDWIDTH PROCUCT, fO = 100kHz (M

Hz)

70

60

50

3

2

1

9

8

7

0 50 75

1007/37 G33

–25 25 100 125

SLEW

GBW

VS = ±15VCL = 100pF

PHASE MARGIN

FREQUENCY (MHz)0.1

VOLT

AGE

GAIN

(dB)

50

40

30

20

10

0

PHASE SHIFT (DEG)

90

100

110

120

130

140

150

160

170

180

1901 10 100

1007/37 G31

AV = 5

VS = ±15VTA = 25°CCL = 100pF

GAIN

PHASE

LT1037 Gain, Phase Shiftvs Frequency

LT1007 Gain, Phase Shiftvs Frequency

50mV

0V

–50mV

AVCL = 1VS = ±15VCL = 15pF 1007/37 G34

FREQUENCY (Hz)

28

24

20

16

12

8

4

01k 100k 1M 10M

1007/37 G36

10k

PEAK

-TO-

PEAK

OUT

PUT

VOLT

AGE

(V) VS = ±15V

TA = 25°C

LT1037LT1007

Maximum Undistorted Outputvs Frequency

5V

0V

– 5V

AVCL = –1VS = ±15V 1007/37 G35

LT1007 Small-SignalTransient Response LT1007 Large-Signal Response

LT1007 Phase Margin, GainBandwidth Product, Slew Rate vsTemperature



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LT1007/LT1037

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APPLICATIONS INFORMATION

WU UU

General

The LT1007/LT1037 series devices may be inserteddirectly into OP-07, OP-27, OP-37 and 5534 sockets withor without removal of external compensation or nullingcomponents. In addition, the LT1007/LT1037 may befitted to 741 sockets with the removal or modification ofexternal nulling components.

Offset Voltage Adjustment

The input offset voltage of the LT1007/LT1037 and its driftwith temperature, are permanently trimmed at wafertesting to a low level. However, if further adjustment ofVOS is necessary, the use of a 10kΩ nulling potentiometerwill not degrade drift with temperature. Trimming to avalue other than zero creates a drift of (VOS/300)µV/°C,e.g., if VOS is adjusted to 300µV, the change in drift will be1µV/°C (Figure 1).

The adjustment range with a 10kΩ pot is approximately±2.5mV. If less adjustment range is needed, the sensitivityand resolution of the nulling can be improved by using asmaller pot in conjunction with fixed resistors. The ex-ample has an approximate null range of ±200µV(Figure 2).

Offset Voltage and Drift

Thermocouple effects, caused by temperature gradientsacross dissimilar metals at the contacts to the inputterminals, can exceed the inherent drift of the amplifierunless proper care is exercised. Air currents should beminimized, package leads should be short, the two inputleads should be close together and maintained at the sametemperature.

The circuit shown to measure offset voltage is also usedas the burn-in configuration for the LT1007/LT1037, withthe supply voltages increased to ±20V (Figure 3).

Figure 2. Improved Sensitivity Adjustment

1007/37 F02

1k

4.7k

OUTPUT

87 6

4

12

3

15V

–15V

–

+LT1007LT1037

4.7k

1007/37 F01

10k

OUTPUTINPUT

87 6

4

12

3

15V

–15V

–

+LT1007LT1037

Figure 1. Standard Adjustment

Unity-Gain Buffer Application (LT1007 Only)

When RF ≤ 100Ω and the input is driven with a fast, large-signal pulse (>1V), the output waveform will look asshown in the pulsed operation diagram (Figure 4).

During the fast feedthrough-like portion of the output, theinput protection diodes effectively short the output to theinput and a current, limited only by the output short-circuitprotection, will be drawn by the signal generator. WithRF ≥ 500Ω, the output is capable of handling the currentrequirements (IL ≤ 20mA at 10V) and the amplifier staysin its active mode and a smooth transition will occur.

1007/37 F04

LT1007

–

+

RF

OUTPUT2.8V/µs

Figure 4. Pulsed Operation

1007/37 F03

VOUT

VOUT = 1000VOS

*RESISTORS MUST HAVE LOW THERMOELECTRIC POTENTIAL

7

6

4

2

3

15V

–15V

–

+LT1007LT1037

50k*

100Ω*

50k*

Figure 3. Test Circuit for Offset Voltage andOffset Voltage Drift with Temperature



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LT1007/LT1037

sn100737 100737fbs


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As with all operational amplifiers when RF > 2k, a pole willbe created with RF and the amplifier’s input capacitance,creating additional phase shift and reducing the phasemargin. A small capacitor (20pF to 50pF) in parallel with RFwill eliminate this problem.

Noise Testing

The 0.1Hz to 10Hz peak-to-peak noise of the LT1007/LT1037 is measured in the test circuit shown (Figure 5a).The frequency response of this noise tester (Figure 5b)indicates that the 0.1Hz corner is defined by only one zero.The test time to measure 0.1Hz to 10Hz noise should notexceed ten seconds, as this time limit acts as an additionalzero to eliminate noise contributions from the frequencyband below 0.1Hz.

Measuring the typical 60nV peak-to-peak noise perfor-mance of the LT1007/LT1037 requires special testprecautions:

1. The device should be warmed up for at least fiveminutes. As the op amp warms up, its offset voltagechanges typically 3µV due to its chip temperatureincreasing 10°C to 20°C from the moment the powersupplies are turned on. In the ten-second measurementinterval these temperature-induced effects can easilyexceed tens of nanovolts.

2. For similar reasons, the device must be well shieldedfrom air currents to eliminate the possibility of thermo-

electric effects in excess of a few nanovolts, whichwould invalidate the measurements.

3. Sudden motion in the vicinity of the device can also“feedthrough” to increase the observed noise.

A noise voltage density test is recommended when mea-suring noise on a large number of units. A 10Hz noisevoltage density measurement will correlate well with a0.1Hz to 10Hz peak-to-peak noise reading since bothresults are determined by the white noise and the locationof the 1/f corner frequency.

Current noise is measured in the circuit shown in Figure 6and calculated by the following formula:

ie nV

Mn

no=

( ) − ( )

( )( )

2 21 2

130 101

1 101

•/

Ω

FREQUENCY (Hz)

100

90

80

70

60

50

40

300.01 1 10 100

1007/37F05b

0.1

GAIN

(dB)

1007/37 F05a

10Ω

0.1µF

4.7µF

VOLTAGE GAIN= 50,000

24.3k

100k

–

+

–

+*

LT1007LT1037

LT1001

2k

4.3k

110k

100k

SCOPE× 1RIN = 1M

*DEVICE UNDER TEST NOTE: ALL CAPACITOR VALUES ARE FOR NONPOLARIZED CAPACITORS ONLY

2.2µF

0.1µF

22µF

Figure 5a. 0.1Hz to 10Hz Noise Test Circuit

1007/37 F06

100Ω

100k

–

+LT1007LT1037

500k

500keno

Figure 6

Figure 5b. 0.1Hz to 10Hz Peak-to-Peak Noise Tester FrequencyResponse



11

LT1007/LT1037

sn100737 100737fbs

The LT1007/LT1037 achieve their low noise, in part, byoperating the input stage at 120µA versus the typical 10µAof most other op amps. Voltage noise is inversely propor-tional while current noise is directly proportional to thesquare root of the input stage current. Therefore, theLT1007/LT1037’s current noise will be relatively high. Atlow frequencies, the low 1/f current noise corner fre-quency (≈120Hz) minimizes current noise to some extent.

In most practical applications, however, current noise willnot limit system performance. This is illustrated in theTotal Noise vs Source Resistance plot in the TypicalPerformance Characteristics section, where:

Total Noise = [(voltage noise)2 + (current noise • RS)2 +(resistor noise)2]1/2

Three regions can be identified as a function of sourceresistance:

(i) RS ≤ 400Ω. Voltage noise dominates

(ii) 400Ω ≤ RS ≤ 50k at 1kHz

400Ω ≤ RS ≤ 8k at 10Hz

(iii) RS > 50k at 1kHz

RS > 8k at 10Hz

Clearly the LT1007/LT1037 should not be used in region(iii), where total system noise is at least six times higherthan the voltage noise of the op amp, i.e., the low voltagenoise specification is completely wasted.

TYPICAL APPLICATIONS

U

1007/37 TA03

365Ω1%

15k5%

20kTRIM

–

+LT1037

2

15V

–15VINPUT

3

7

6

4

OUTPUT

RN60C FILM RESISTORS

340k1%

THE HIGH GAIN AND WIDE BANDWIDTH OF THE LT1037 (AND LT1007) IS USEFUL IN LOW FREQUENCY, HIGH CLOSED-LOOP GAIN AMPLIFIER APPLICATIONS. A TYPICAL PRECISION OP AMP MAY HAVE AN OPEN-LOOP GAIN OF ONE MILLION WITH 500kHz BANDWIDTH. AS THE GAIN ERROR PLOT SHOWS, THIS DEVICE IS CAPABLE OF 0.1% AMPLIFYING ACCURACY UP TO 0.3Hz ONLY. EVEN INSTRUMENTATION RANGE SIGNALS CAN VARY AT A FASTER RATE. THE LT1037’S “GAIN PRECISION-BANDWIDTH PRODUCT” IS 200 TIMES HIGHER AS SHOWN.

FREQUENCY (Hz)0.1

0.001

GAIN

ERR

OR (%

)

0.01

0.1

1

1 10 100

TYPICALPRECISION

OP AMP

LT1007

LT1037

GAIN ERROR = CLOSED-LOOP GAINOPEN-LOOP GAIN

Gain 1000 Amplifier with 0.01% Accuracy, DC to 5Hz Gain Error vs FrequencyClosed-Loop Gain = 1000

Resistor noisedominates

Current noisedominates


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12

LT1007/LT1037

sn100737 100737fbs


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Infrared Detector Preamplifier

1007/37 TA08

IR RADIATION

OPTICALCHOPPER

–

+LT1007

50mA

15V

6

4

73

2

OUTPUT TODEMODULATOR

SYNCHRONOUS

CHOPPED DETECTOROUTPUT

PHOTOCONDUCTIVEINFRARED DETECTORHgCdTe typeINFRA-RED ASSOCIATES, INC.

100µF

392k*

15V

–15V

+

+

100µF10µF

+

392Ω*

392Ω*

267Ω*

2N2219A33Ω

10Ω1k

+100µF

13Ω AT 77°K

*1% METAL FILM

Precision Amplifier Drives 300Ω Load to ±10V

1007/37 TA05

365Ω1%

20k5%

10kTRIM

–

+LT1037

–

+LT1007

2

INPUT

3

2

3

6

6

OUTPUT±10V

15Ω5%

15Ω5%

RL300Ω

340k1%

THE ADDITION OF THE LT1007 DOUBLES THE AMPLIFIER’S OUTPUT DRIVE TO ±33mA. GAIN ACCURACY IS 0.02%, SLIGHTLY DEGRADED COMPARED TO ABOVE BECAUSE OF SELF-HEATING OF THE LT1037 UNDER LOAD.

Microvolt Comparator with Hysteresis

1007/37 TA04

OUTPUT

POSITIVE FEEDBACK TO ONE OF THE NULLING TERMINALSCREATES APPROXIMATELY 5µV OF HYSTERESIS. OUTPUT CAN SINK 16mA.

INPUT OFFSET VOLTAGE IS TYPICALLY CHANGED LESSTHAN 5µV DUE TO THE FEEDBACK.

7

86

42

3INPUT

–15V

15V

–

+LT1007

100M5%

365Ω1%

15k1%



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LT1007/LT1037

sn100737 100737fbs


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Phono Preamplifier

1007/37 TA06

100Ω –

+LT1037

MAG PHONOINPUT

7

6

43

2

7.87k15V

–15V

OUTPUT

ALL RESISTORS METAL FILM

0.01µF

0.033µF

100pF

47k

100k

Tape Head Amplifier

1007/37 TA07

100Ω –

+LT1037

TAPE HEADINPUT

6

3

2

OUTPUT

ALL RESISTORS METAL FILM

0.01µF4.99k

316k

SI PLIFIED SCHE ATIC

W W

Q1A

Q10

Q6

Q4

Q2B

Q15

Q2A

Q1B

INVERTINGINPUT (–)

C1 = 110pF FOR LT1007C1 = 12pF FOR LT1037

NONINVERTINGINPUT (+)

3

1 8

7

6

V–

V–

V+

V+

4V–

1007/37 SD

V+

OUTPUT

Q8

3.4k 3.4k

17k17k 1.2k

750Ω

20Ω

20Ω200Ω

50Ω200Ω200Ω 6k6k

80pF 20pF

C11.2k

Q20

130pF

Q17

Q18

Q25

Q24

Q23Q16Q12

Q22Q30

Q28

Q26

Q29

Q27

450µA 240µA

500µA120µA240µA

750µA

Q19

Q11

Q13

Q7

2

Q3

Q5 Q9



14

LT1007/LT1037

sn100737 100737fbs

PACKAGE DESCRIPTION

U

H Package8-Lead TO-5 Metal Can (.200 Inch PCD)

(Reference LTC DWG # 05-08-1320)

J8 Package8-Lead CERDIP (Narrow .300 Inch, Hermetic)


45°TYP

0.050(1.270)

MAX

0.016 – 0.021**(0.406 – 0.533)

0.010 – 0.045*(0.254 – 1.143)

SEATINGPLANE

0.040(1.016)

MAX 0.165 – 0.185(4.191 – 4.699)

GAUGEPLANE

REFERENCEPLANE

0.500 – 0.750(12.700 – 19.050)

0.305 – 0.335(7.747 – 8.509)

0.335 – 0.370(8.509 – 9.398)

DIA

0.200(5.080)

TYP

0.027 – 0.045(0.686 – 1.143)

0.027 – 0.034(0.686 – 0.864)

0.110 – 0.160(2.794 – 4.064)

INSULATINGSTANDOFF

H8(TO-5) 0.200 PCD 0595

LEAD DIAMETER IS UNCONTROLLED BETWEEN THE REFERENCE PLANE AND 0.045" BELOW THE REFERENCE PLANE

FOR SOLDER DIP LEAD FINISH, LEAD DIAMETER IS0.016 – 0.024

(0.406 – 0.610)

*

**

J8 1298

0.014 – 0.026(0.360 – 0.660)

0.200(5.080)

MAX

0.015 – 0.060(0.381 – 1.524)

0.1253.175MIN

0.100(2.54)BSC

0.300 BSC(0.762 BSC)

0.008 – 0.018(0.203 – 0.457)

0° – 15°

0.005(0.127)

MIN

0.405(10.287)

MAX

0.220 – 0.310(5.588 – 7.874)

1 2 3 4

8 7 6 5

0.025(0.635)

RAD TYP0.045 – 0.068

(1.143 – 1.727)FULL LEAD

OPTION

0.023 – 0.045(0.584 – 1.143)

HALF LEADOPTION

CORNER LEADS OPTION (4 PLCS)

0.045 – 0.065(1.143 – 1.651)NOTE: LEAD DIMENSIONS APPLY TO SOLDER DIP/PLATE

OR TIN PLATE LEADS

OBSOLETE PACKAGES



15

LT1007/LT1037

sn100737 100737fbs

Information furnished by Linear Technology Corporation is believed to be accurate and reliable.However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-tation that the interconnection of its circuits as described herein will not infringe on existing patent rights.

PACKAGE DESCRIPTION

U

N8 Package8-Lead PDIP (Narrow .300 Inch)(Reference LTC DWG # 05-08-1510)

S8 Package8-Lead Plastic Small Outline (Narrow .150 Inch)


N8 1098

0.100(2.54)BSC

0.065(1.651)

TYP

0.045 – 0.065(1.143 – 1.651)

0.130 ± 0.005(3.302 ± 0.127)

0.020(0.508)

MIN0.018 ± 0.003(0.457 ± 0.076)

0.125(3.175)

MIN

1 2 3 4

8 7 6 5

0.255 ± 0.015*(6.477 ± 0.381)

0.400*(10.160)

MAX

0.009 – 0.015(0.229 – 0.381)

0.300 – 0.325(7.620 – 8.255)

0.325+0.035–0.015+0.889–0.3818.255( )

*THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.010 INCH (0.254mm)

0.016 – 0.050(0.406 – 1.270)

0.010 – 0.020(0.254 – 0.508)

× 45°

0°– 8° TYP0.008 – 0.010

(0.203 – 0.254)

SO8 1298

0.053 – 0.069(1.346 – 1.752)

0.014 – 0.019(0.355 – 0.483)

TYP

0.004 – 0.010(0.101 – 0.254)

0.050(1.270)

BSC

1 2 3 4

0.150 – 0.157**(3.810 – 3.988)

8 7 6 5

0.189 – 0.197*(4.801 – 5.004)

0.228 – 0.244(5.791 – 6.197)

DIMENSION DOES NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.006" (0.152mm) PER SIDEDIMENSION DOES NOT INCLUDE INTERLEAD FLASH. INTERLEAD FLASH SHALL NOT EXCEED 0.010" (0.254mm) PER SIDE

*

**



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LT1007/LT1037

sn100737 100737fbs

LT/CPI 1101 1.5K REV B • PRINTED IN USA

LINEAR TECHNOLOGY CORPORATION 1985

Strain Gauge Signal Conditioner with Bridge Excitation

6

4

73

2

7.5V

7.5V

–7.5V

6

4

7

–7.5V

1007/37 TA09

–

+LT1007

–

+LT1007

6

4

73

3

2

2

350ΩBRIDGE

OUTPUT0V TO 10V

301k*

301k*

GAINTRIM50k

ZEROTRIM10k

REFERENCEOUT

1µF

15V

–15V

499Ω*

5k2.5V

LT1009

–

+LT1007 *RN60C FILM RESISTOR

THE LT1007 IS CAPABLE OF PROVIDING EXCITATION CURRENTDIRECTLY TO BIAS THE 350Ω BRIDGE AT 5V. WITH ONLY 5V ACROSSTHE BRIDGE (AS OPPOSED TO THE USUAL 10V) TOTAL POWERDISSIPATION AND BRIDGE WARM-UP DRIFT IS REDUCED. THE BRIDGEOUTPUT SIGNAL IS HALVED, BUT THE LT1007 CAN AMPLIFY THE REDUCED SIGNAL ACCURATELY.

RELATED PARTSPART NUMBER DESCRIPTION COMMENTS

LT1028 Ultralow Noise Precision Op Amp Lowest Noise 0.85nV/√Hz

LT1115 Ultralow Noise, Low distortion Audio Op Amp 0.002% THD, Max Noise 1.2mV/√Hz

LT1124/LT1125 Dual/Quad Low Noise, High Speed Precision Op Amps Similar to LT1007

LT1126/LT1127 Dual/Quad Decompensated Low Noise, High Speed Precision Op Amps Similar to LT1037

LT1498/LT1499 10MHz, 5V/µs, Dual/Quad Rail-to-Rail Input and OutputPrecision C-LoadTM Op Amps

C-Load is a trademark of Linear Technology Corporation.

U

TYPICAL APPLICATIO

Linear Technology Corporation1630 McCarthy Blvd., Milpitas, CA 95035-7417(408) 432-1900 FAX: (408) 434-0507 www.linear.com



LT1007/LT1037 Low Noise, High Speed Precision Operational ... · amplifiers: 2.5nV/ √Hz wideband...

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