I.Galdi,E.Bonizzoni,F.Maloberti,G.Manganaro,P.Malcovati:...
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I. Galdi, E. Bonizzoni, F. Maloberti, G. Manganaro, P. Malcovati: "Two-Path Band-Pass Σ-Δ Modulator with 40-MHz IF 72-dB DR at 1-MHz Bandwidth Consuming 16 mW"; 33rd European Solid State Circuits Conf., ESSCIRC 2007, Munich, 11-‐13 September 2007, pp. 248-‐251.
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Two-Path Band-Pass !" Modulator with 40-MHz IF
72-dB DR at 1-MHz Bandwidth Consuming 16 mW
I. Galdi, E. Bonizzoni, F. Maloberti
University of Pavia
Department of Electronics
Via Ferrata, 1 – 27100 Pavia – ITALY
G. Manganaro
National Semiconductor Corporation
1 Stiles Road
Salem, NH 03079 – USA
P. Malcovati
University of Pavia
Department of Electrical Engineering
Via Ferrata, 1 – 27100 Pavia – ITALY
Abstract— A band-pass !" modulator that uses two time
interleaved second-order modulators and cross-coupled paths is
described. Split zeros around the 40-MHz IF provide a signal
band of 1 MHz with 72-dB DR and 65.1-dB peak SNR. The
circuit, integrated in a 0.18-!m CMOS technology, uses a
60-MHz clock per channel. Experimental results show that the
in-band region is not affected by tones caused by mismatches
and that a two-tones input causes an IMD signal of 68 dBc. The
power consumption is 16 mW with 1.8-V supply.
I. INTRODUCTION
The designer of portable communication systems often
examines solutions with !" band-pass converters [1] because
of their low power benefit. However, since the multiple zeros
of the noise transfer function are at the IF, the noise shaping
advantage vanishes when increasing the signal band.
Moreover, the position of the IF frequency is almost locked.
Instead, a Nyquist-rate converter enables any signal bandwidth
and allow positioning the IF anywhere in the Nyquist interval.
Nevertheless, the power consumption is not affordable for
portable applications as, for instance, for sampling frequencies
in the 40 - 80 MHz range, the power of a 12-bit converter is
several tens of mW [2].
This design offers a viable solution to the problem as it
obtains low power while enabling a relatively large bandwidth
(2 MHz) so that the IF can be possibly moved within a
reasonable range, or the granted frequency band can be fully
used for the signal. The used circuit is a 2-path band-pass
architecture with 4-bit quantizers. The used scheme avoids the
well known limits caused by channel mismatches, that,
typically, cause in-band tones. Indeed, the experimental results
show a tone free spectrum with a low noise flat region of
±1 MHz around 40 MHz (less than 125 nV/
!
Hz with a ±1 V
differential reference). Therefore, using a 1-MHz signal band,
the dynamic range is 72 dBFS while the peak SNR is 65.1 dB.
Each path runs at 60 MHz, leading to a 120-MHz sampling
frequency. The power consumption is 16 mW with a 1.8-V
supply.
II. NTF SYNTHESIS
This circuit obtains a band-pass sigma-delta response by
synthesizing the noise transfer function (1+#z-1
+z-2
)2. The
NTF for # =1 gives rise to a pair of zeros on the unity circle
around 1/3fs and 2/3fs and no spur zeros elsewhere. With # !1
but close to the unity value, the pair of zeros moves slightly
apart increasing the region of band-pass noise shaping. This
method is used in this design for trading the noise attenuation
at the IF with an increased signal band. Actually, the zero shift
does not affect the performance until the shaped quantization
noise remains below the floor established by the thermal noise
and the finite performance of the op-amps.
The architecture synthesizes the expected transfer function
starting from a two-path structure. The method is based on the
rewriting of the NTF as follows
!
NTF = (1+ z"2)2 +# 2z"2[ ] + z"1 2#(1+ z"2)[ ] (1)
that outlines two main terms, enclosed in squared brackets,
both function of z2. Therefore, the implementation of those
terms would require a circuit able to achieve a z $ z2
transformation. Moreover, observe that the second term
requires a delay by one clock period. As done in [3], the
transformation z $ z2 is granted by a two-path time-
interleaved scheme with each path running at half of the clock
frequency. In our case each path should generate an NTF
equal to (1 + z-1
)2 + #
2z
-1. The result is obtained by the scheme
shown in Fig. 1 (with the auxiliary inputs set to zero). Notice
that the architecture of Fig. 1 is a second order modulator
employing blocks with 1/(1 + z-1
) transfer functions instead of
the one of a conventional integrator. Moreover, there is an
extra feedback toward the input made by two terms: one is the
analog output and the other is combined with the normal
1-4244-1125-4/07/$25.00 ©2007 IEEE. 248
feedback term that is therefore multiplied by 2 before
exercising the main DAC. The result is that the combination
of the feedbacks yields the quantization error at the input of
the block after a delay by z-1
. This is what required to
implement the last term #2z
-1 of the path’s NTF.
Fig. 1 – Block diagram of the single path.
Fig. 2 – Block diagram of the modulator.
Actually, the block diagram of Fig. 1 obtains # =1. For having
a different value, it is enough to change the capacitance used
in the analog feedback and to adjust the reference voltage of
the main DAC. A possible mismatch between the two
corrective actions is not problematic because, possibly, it
gives rise to a gain error of the entire modulator.
A two-path time-interleaved architecture uses the even
input samples in one path and the odd ones on the other path.
Therefore, there is one clock period delay between the signals
that are processed by the two paths. This delay corresponds to
what required by the z-1
term that multiplies the second term
enclosed in square brackets in (1). Therefore, a cross-coupled
injection of the quantization noises into the auxiliary input
realizes the second brackets because the path transfer function
is 2#(1 + z-1
). By inspection, it is easy to verify that the
transfer function from the auxiliary input to the output is,
actually, (1 + z-1
). Thus, the cross injection of the quantization
noise multiplied by 2 provides the result. The complete block
diagram of the modulator is shown in Fig. 2, where the cross-
coupled quantization errors are distinguished into the analog
and digital components. The output is interpolated at the
output to provide the output bit stream at the foreseen clock
frequency. A possible offset mismatch of the op-amps used in
the first integrators causes a tone at fs/2 while a gain mismatch
is equivalent to an attenuation and a modulation of the input
signal by fs/2. Therefore, the caused tones are far away from
the signal band. Observe that the cross-coupled connections
required for injecting the second term of the NTF create a loop
of two blocks with transfer function z-1
/(1 + z-1
). The effect of
the loop can be easily studied in the time domain and the
result is that a possible DC signal (like the offset mismatch of
the second op-amp) into that loop is transformed into a tone at
fs/4.
Fig. 3 – Implementation of z
-1/(1 + z
-1).
III. CIRCUIT SCHEMATIC
The circuit implementation of the transfer function
1/(1 + z-1
) or z-1
/(1 + z-1
) requires an inversion of the previous
output every clock period. We obtain the same result by
modulating by ±1 at fs/2 both input and output of a
conventional integrator [3]. The circuit that realizes the ±1
modulation at half of the clock frequency at input and output
of an inverting or non inverting integrator is the scheme of
Fig. 3. Actually, the square wave modulation at the output of
the first integrator and the one at the input of the next one
cancels one another just requiring the ±1 switches only at
input and output of the entire scheme and in the cross-coupled
paths. Moreover, for saving power, the first and the second
integrators of the paths share the op-amp [4]. The use of the
same of-amp in the first and in the second path is made
possible by the z-1
delay between the two decimation by two
operations at the input. The integrating capacitors are
disconnected from the op-amp output side with a switch
during the inactive period. The use of the op-amp in both
phases demands for higher bandwidth and slewing, but the
overall power consumption diminishes by about 35% than in
the case with separate op-amps. As a side benefit of the op-
amp sharing, there is no offset mismatch in the cross-coupled
loop and the tone at fs/4 is caused only by the clock
feedthrough associated to the switches connected to the virtual
ground.
The two op-amps have the same scheme but use different
bias currents as requested by the slew-rate and the feedback
factors: they are fully-differential mirrored cascode amplifiers
with switched capacitor common-mode feedback. The key
features are given in Table 1. Observe that the DC gain is
pretty low; this feature is made possible by the moderate
sensitivity on the gain at the expected overall resolution. The
simulation results made at the behavioural level, but
including finite gain, bandwidth and slew-rate of the op-amps
show that a DC gain as low as 40 dB does not degrade the
performance that are, instead, determined by the kT/C limit.
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On the contrary, the bandwidth and the slew-rate must be
relatively high but the request is met by the used scheme at a
reasonable power consumption. The high bandwidth and
slew-rate of the second op-amp depend on the feedback factor
established by the cross-coupled input with gain 2.
TABLE I OP-AMPS PERFORMANCE
Feature First op-amp Second op-amp
DC gain 46 dB 42 dB
Unity gain frequency 200 MHz 250 MHz
Slew-rate 200 V/µs 260 V/µs
Supply voltage 1.8 V 1.8 V
Power consumption 1.2 mW 2.3 mW
The voltage comparators of the two 4-bit flash ADCs are
made by a preamplifier with gain 4 followed by a latch. The
bias current of each preamplifier is 20 µA. A single resistive
divider made by 16 equal 500-% resistors provides the
reference voltages of both flash ADCs. The DACs are
embedded in the input switched capacitor structure made by
16 unity elements equal to 25 fF. The combinatory digital
logics perform the required operations within the clock
period, 16.5 ns. The integration capacitances are slightly
changed (# = 1.003) to ensure a proper NTF zeros separation.
Fig. 4 – Chip microphotograph.
IV. EXPERIMENTAL RESULTS
The modulator was integrated using a 0.18-"m single-poly
5-metal CMOS technology. The die, whose microphotograph
is shown in Fig. 4, has an active area equal to 0.44 mm2. The
reference voltages are external to the circuit and no internal
buffer is used for enforcing the strength of the references. This
is beneficial for limiting the power consumption, but is
problematic for the ringing caused after every switching
because of the bonding inductance of the connection from pin
to pad. The duration of the ringing limits the usable clock
frequency that, for a TQFP package, is about 16 MHz per path
equivalent to an IF of 10.7 MHz. The use of a LLP package,
whose bonding inductance is much lower than the TQFP,
allows a 60 MHz clock per path that increases the IF to 40
MHz. The operation with 16-MHz clock requires an overall
power consumption of 10.5 mW while, with an higher clock
(60 MHz), the required power, accounting for the increased
one consumed in the op-amps for more demanding slew-rate
and bandwidth, is 16 mW.
Fig. 5 – Measured modulator output spectrum.
The measured output spectrum is shown in Fig. 5. The in-
band noise is almost flat over the used range with a floor
equal to 125 nVFS/
!
Hz , that is slightly more than the expected
kT/C contribution (102 nVFS/
!
Hz ), likely because of the
op-amp limits. The spectrum also shows the tone at fN/2 that
is -34 dBFS that, as described before, is due to the clock
feedthrough at the input of the second stages. The associated
amplitude (20 mV) slightly diminishes the full scale of the
modulator, that, indeed, is much more limited by the
quantization noises.
Fig. 6 – SNR versus input signal amplitude.
250
The SNRs as a function of the input amplitude for three
different bandwidths 1 MHz (40 ± 0.5 MHz), 2 MHz
(40 ± 1 MHz) and 4 MHz (40 ± 2 MHz) are shown in Fig. 6.
Since there are no tones, the SNDR equals the SNR. It can be
noted that an increase (as well as a reduction) of the signal
band diminishes the SNR as the square of the increase factor
(i.e., plain oversampling) until remaining within the flat
region, but drops significantly when the signal band reaches
the frequency region where the noise ramps up. The peak of
the SNR occurs around -6 dBFS even if the circuit uses a 4-bit
quantization. The result, predicted by simulations at the
behavioural level, is due to the relatively large amplification
of both quantization errors that show up at the two inputs.
Fig. 7 – IMD test result.
The linearity of the modulator has been evaluated with a
two-tone intermodulation (IMD) test (f1 = 39.474 MHz,
f2 = 39.874 MHz). For two tones at -14 dBFS (as shown in
Fig. 7), the intermodulation tone falling at 2f2 - f1 is visible
above the noise floor and gives an IMD of about 68 dBc. The
result is 3 dB better than the remarkable figure obtained in [5]
that uses a more complex solution and requires four-five
times more of power.
The performance of the modulator are summarized in
Table 2. Obviously, since the IF frequency is a fixed ratio of
the path clock (2/3), scaling down the clock frequency also
scales the IF. Thus, for example, the circuit can meet the
specification for digitizing the AM/FM radio broadcasting
signal, by obtaining 67-dB peak SNR and 72-dB DR, with a
reduced power equal to 10.5 mW, made possible by the
diminished speed request to the op-amps.
V. CONCLUSIONS
In this paper a band-pass !" modulator that uses two time-
interleaved second-order modulators and cross coupled paths
is described. Split zeros around the 40 MHz IF provide a
dynamic range of 72 dB, 69 dB and 50 dB SNR for signal
bands of 1 MHz, 2 MHz, and 4 MHz respectively (full scale
signal ±1 VPP differential). The in-band noise floor is about
125 nV/
!
Hz . The circuit, integrated in a 0.18-"m CMOS
technology, uses a 60-MHz clock per channel. For two tones
at -14 dBFS, the intermodulation is about 68 dBc. The power
consumption is 16 mW with 1.8-V supply and can be
decreased to 10.5 mW with 16-MHz clock per channel.
TABLE II
PERFORMANCE SUMMARY
fs 60 MHz (x 2)
IF 40 MHz
Voltage References ±0.5 V
Signal Bandwidth up to 4 MHz
Peak SNR 65.1 dB @ 1 MHz Band
Active Area 0.44 mm2
Supply Voltage 1.8 V
Power Consumption 16 mW
IMD 68 dBc
DR 72 dB @ 1 MHz Band
ACKNOWLEDGMENT
The authors would like to thank Carlos Hinojosa and
Jacque Margolycz of National Semiconductor Corporation for
their valuable support to this work.
REFERENCES
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