Grating Electromechanical Systems (GEMS), Laser … … · * Major portions of this work were...
Transcript of Grating Electromechanical Systems (GEMS), Laser … … · * Major portions of this work were...
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Grating Electromechanical Systems (GEMS),
Laser Displays, and Related Doodles
Marek W. Kowarz*Infotonics Technology Center
* Major portions of this work were performed when the
author was with Eastman Kodak Company.
The Institute of Optics Colloquium,
University of Rochester, April 20, 2009.
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Device ON
Incident
Beam
Diffracted
Beams
Diffracted
Beams
ΛΛΛΛ Sapphire Display
1080 X 1920
Monochrome Display
256 X 455
RGB Laser Display
256 X 455
Invention of
GEMS Device
1st Operational
GEMS Device
Base Device
Patent (6,307,663)
Base Display
Patent (6,411,425)
Spectral Imager
Device & System
2007
2008
Spectral Imager
6-Band Demo
XGA Display
Evaluation Kit
GEMS Technology: Timeline and Milestones
Grating ElectroMechanical System
GEMS Project
GEMS Display
Project
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Device OFF
RibbonIncident
Beam
Reflected
BeamIntermediate
Support
Silicon
Substrate
Reflective (Off) State
Device OFF
RibbonIncident
Beam
Reflected
BeamIntermediate
Support
Silicon
Substrate
Reflective (Off) State
GEMS Device
ΛΛΛΛ
Intermediate
Supports
Device ON
Incident
Beam
Diffracted
Beams
Diffracted
Beams
ΛΛΛΛ
+1st
+2nd
−1st
−2nd
Diffracted
OrdersDiffracted
OrdersArr
ay
Directi
on
Diffractive (On) State
ΛΛΛΛ
Intermediate
Supports
Device ON
Incident
Beam
Diffracted
Beams
Diffracted
Beams
ΛΛΛΛ
+1st
+2nd
−1st
−2nd
Diffracted
OrdersDiffracted
OrdersArr
ay
Directi
on
Diffractive (On) State
Device Features
Very wide active area
⊥⊥⊥⊥ grating (ΛΛΛΛ) direction
Digital operation
>2000:1 contrast
>60% multiorder efficiency
Typical Dimensions
Grating period = 15 to 50 µµµµm
Actuation depth = 150 to 200 nm
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GEMS Device Structure and Operation
The GEMS device consists of a linear array of pixels with electromechanical
ribbons suspended above a hidden grating
Typically
Pitch = 15 to 50 µµµµm
Actuation Depth = 150 to 200 nm
Metal
Die
lec
tric
s
Silicon Substrate
Periodic
Support
Cross-Sectional View
Grating ElectroMechanical System
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GEMS Device Wafer
6" GEMS Wafer
Stitched Linear Array
(1 mm active area width)
Scalable
Resolution
1080
2160
3240
Very Wide Active Area Device
(10 mm x 20 mm active area)
18 µµµµm
36 µµµµm
or Pixel Size
Flexibility
Array Direction
Gra
tin
g (
ΛΛ ΛΛ)
Dir
ecti
on
Active Area
1080-Pixel GEMS Linear Array
ΛΛΛΛ = 36 µµµµm
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Pixel #1 ON . . . . .
Pixel #2 OFF. . . . . .
Pixel #3 ON. . . . . . .
Pixel #4 OFF . . . . . .
Incident Beam
Line Illumination
� ON pixels diffract light and the diffractive orders are
collected to form a line image
Optical Stop
� OFF pixels reflect light, which is blocked by an optical stop
Optical System Principles
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-0.4
0
0.4
0.8
1.2
1.6
2
-45
-30
-15
0
15
30
45
-0.4 0 0.4 0.8
1st-
Ord
er
Inte
nsity (
V)
Input (V
)
Time (µs)
RibbonVoltage
Intensity
Response to High-Speed Input Signal
The fast switching speeds of the GEMS device enable a 2D display
with a 1D linear array
~30 nanosecond digital operation
GEMS Device High-Speed Response
8
225
ns
0th
Order
1st Order
0 V
25 V
−25 V
1 µs
Rib
bo
n
Vo
ltag
e
Inte
nsit
y
(arb
. u
nit
s)
Inte
nsit
y
(arb
. u
nit
s)
25 ns
Increment
0th Order
1st Order
Enlarged
Example of Response to
Random PWM Data Stream
Response times ~30 ns
and jitter <0.5 ns
The fast switching speeds allow for the generation of gray scale
through pulse width modulation (PWM)
PWM Gray Scale Generation
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Device OFF
RibbonIncident
Beam
Reflected
BeamIntermediate
Support
Silicon
Substrate
Metal
Dielectrics
Reflective (Off) State Λ
h
bs
bc
Diffractive (On) State
Device ON
Incident
Beam
Diffracted
Beams
Diffracted
Beams
ΛΛΛΛ
+1st
+2nd
−1st
−2nd
Diffracted
OrdersDiffracted
Orders
Opto-Electromechanical Device Model
Standoffs
Red: Si3N4
Blue: SiO2
• GEMS period (Λ)
• Support width (bS)
• Channel depth (h)
• Ribbon width
• Ribbon gap
• Ribbon dielectric thickness
• Ribbon metal reflector
• Standoff separation
• Standoff height
1. Pull-down &
operating voltage
2. Ribbon profile
3. Diffraction efficiency
Opto-Electromechanical
Model
10
h
1t1ε
x2/L− 2/L
)( profile xy⇒V
Stress-Limit Ribbon Deformation Model
unit widthper force tensile ⇒= ∑n
nntS σ
gap ticelectrosta effective ⇒+= ∑q
q
qtht
ε
Stressed ribbon differential equation:
where
layer th of stress nn ⇒σ
layer th ofty permittivi relative qq ⇒ε
widthribbon length, ribbon ⇒⇒ wL
space free ofty permittivi ⇒oε
2
2
2
2
4
4
)(2
yt
wV
dx
ydSw
dx
ydEI o
−=−
ε
tension
electrostatic
attractionbending
Analytical solution for ribbon profile and critical voltages
Device Model: Critical Voltages, Contact Length & Efficiency
ΛΛΛΛ
h
bs
bc
oPD
St
LV
ε
3673.1 =
( ) ( )
−
+−+−=
ht
hthtthht
S
LV
oRL ln
2
2/3
ε
Pull-down voltage:
Release voltage:
Contact length: ( ) VVVLb RLc voltageoperating @ 1 −=
2
0
2)(4 1
∫Λ
Λ−
Λ= dxee mxixyi
mπλπη
Diffraction Efficiency:
Nearly trapezoidal grating profile
12
0
5
10
15
20
25
30
20 40 60 80 100 120 140 160
Pull-D
own Voltage [V
]
Ribbon Length [µm]
Wafer Lot 3
Wafer Lot 2
Wafer Lot 1
−180
−160
−140
−120
−100
−80
−60
−40
−20
0
20
−30 −20 −10 0 10 20 30Deflection (nm)
x (µm)
20V
18V
12V
16V
Ribbon Shape
(AFM)
Pull-Down Voltage
Stress-Limit Model
Versus Experiment
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Laser Display
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RGB Display Lasers (early 2000s)
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Compact RGB Display Lasers (now)
And many others
in development(OSRAM, Mitsubishi, �)
Novalux Necsel(now Necsel)
Multi-Watt
Corning Green Laser(waveguide SHG)
100–300 mW
Nichia Blue Laser Diode
50 mW–1 W
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Laser Projection Display
� Realization of low-cost, high-power RGB lasers enables
• Projected images with large-screen diagonal (front or rear)
• Color with extreme saturation, when desirable
• Light source having long lifetime
• Low cost per diagonal inch
• Efficient use of light
• High energy efficiency
• Compact, lightweight systems
� A low-cost, high-performance light modulator is also
required
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Modulator Options
� 2D Spatial Light Modulator and no scanner – e.g., DMD
• Example: Mitsubishi Laservue TV (see laservuetv.com)
• Challenging to achieve full HD resolution without artifacts at low cost
� No Spatial Light Modulator and 2D laser scanner – e.g., MEMS raster scanner with direct diode modulation
• Example: Microvision pico-projector (see www.microvision.com)
• Low-cost solution
• Full HD challenged by scanner resolution and laser modulation speed
• Difficulties with speckle reduction and laser power scalability
� 1D Spatial Light Modulator and 1D scanner
• Resolution is easily scalable
• Excellent image quality
• Low-cost solution at high resolution
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LaserCantilever Array
History: MEMS Cantilevers (1978)
K. E. Petersen, IEEE Trans.
Electron Devices 25 (1978)
Lamp
History: Scophony (1938)
Liquid Light
Modulation
Scophony Projection Television Manual
(www.tvhistory.tv)
Laser
GLV Pixel
History: Grating Light Valve (1992 – Present)
Grating Light Valve Display Device, (Sony Corporation, 2002)
D. Corbin et al., Grating Light Valve and Vehicle Displays, (www.siliconlight.com)
Three-Chip Front-Projection Laser Display PrototypeGEMS
GEMS
GEMS
Patterned
Turning Mirror
Projection
Lens
X-cube
Red
Laser BeamTo Screen
Green
Laser Beam
Blue
Laser Beam
G
R
B
GEMS
GEMS
GEMS
Patterned
Turning Mirror
Projection
Lens
X-cube
Red
Laser BeamTo Screen
Green
Laser Beam
Blue
Laser Beam
G
R
B
Galvanometer
Mirror
Screen
Resolution 1920 (H)
1080 (V)
Frame Rate 60 Hz
Screen Size 115 inch
Native Bit Depth 11 bit/color
(PWM)
System Contrast
Frame-sequential >1500:1
ANSI Checkerboard >250:1
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GEMS Front-Projection Prototype:
Photograph of Scene from Scanned Motion Picture Film
Image Color Setting: Natural Mode
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GEMS Laser Display (color filled)
TV Standard (ITU 709) (dotted)
High End LCOS (solid)
High End DMD (dashed)
Color Gamut
Photograph of Computer-Generated Imagery
Image Color Setting: Full Gamut Mode
Three-Chip Front-Projection Laser Display Prototype
GEMS
GEMS
GEMS
Patterned
Turning Mirror
Projection
Lens
X-cube
Red
Laser BeamTo Screen
Green
Laser Beam
Blue
Laser Beam
G
R
B
GEMS
GEMS
GEMS
Patterned
Turning Mirror
Projection
Lens
X-cube
Red
Laser BeamTo Screen
Green
Laser Beam
Blue
Laser Beam
G
R
B
Galvanometer
Mirror
Cables from
Electronics Rack
GEMS
Galvo
Mirror
X-cube
GEMS
GEMS
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Propagation of Diffracted Light BeamsNear GEMS Array
Before Patterned M
irror
After Patterned M
irror
After Lens
Near Scanning M
irror
GEMS
Laser Beam
Scanning
Mirror
Projection Lens
Patterned
Mirror
� Perpendicular orientation of GEMS grating period enables
(a) Diffracted beams to be separated throughout system (except at image plane)
(b) On-axis illumination path before projection lens
(c) Collection of multiple diffracted beams with relatively small projection lens
� Small scanning mirror is placed near Fourier transform plane of projection lens
Light Propagation Model
Near GEMS Array
Before Patterned M
irror
After Patterned M
irror
After Lens
Near Scanning M
irror
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To separate diffracted orders: sin θθθθI < λ/Λλ/Λλ/Λλ/Λ
For a Gaussian laser beam: FWHM ≈ 0.55 λλλλ/sin(θθθθI /2)
Therefore, FWHM > 1.1 ΛΛΛΛ [In practice FWHM ≈ 1.5 ΛΛΛΛ]
Separation of Diffracted Orders
+2nd
0th
+1st −1st −2nd
Diffracted
Orders
FWHM
Λ
h
FWHM
Incident
Beam
Patterned
Mirror
Λ
h
θI
25
Patterned
Turning Mirror
Green
Laser
GalvanometerMirror
Projection
Lens
Red
Laser
Blue
Laser
GEMS
GEMS
GEMS
Laser Projector Architecture 1: Three-Chip System
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Combines advantages of three-chip architecture with those of single-
chip architecture
� Simple optical architecture
� Maximum laser power utilization and brightness
� Best image quality
Trilinear Array
(front view)
Galvanometer
Mirror
Trilinear
GEMS array
Patterned
Mirror Projection Lens
RGB
Laser Beams
Enlarged
Area
R
G
B
Trilinear
GEMS Array
Laser Projector Architecture 2: Multilinear Array System
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Galvanometer Patterned
Turning Mirror
Red & Green
Lasers Projection
Lens
Blue & Cyan
Lasers Bilinear GEMS
Bilinear
GEMS
Mirror
Dichroic
Beamsplitter Enlarged
Area
R
G
Four-Color System with Two Bilinear GEMS Arrays
Laser Projector Architecture 3:
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GEMS Device Efficiency Model
Optimized GEMS System Collects: 4 or 6 orders for Red (curve b or c)
6 orders for Green (curve c)
6 or 8 orders for Blue (curve c or d)
0.4 0.45 0.5 0.55 0.6 0.65 0.7
Wavelength − Microns
30
40
50
60
70
80
90
±1 orders
±1 & ±2 orders
±1, ±2 &
±3 orders
±1, ±2, ±3 & ±4 orders
Wavelength (µm)
Diffraction Efficiency (
%)
(a)
(b)
(c)
(d)
8.5 µm ribbon width
0.5 µm ribbon gap
170 nm depth
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Efficient GEMS device can be fabricated using the same design for
all three colors
Note: RGB wavelengths are 630 nm, 530 nm, and 450 nm for model
Device Efficiency Model for RGB System
0.15 0.16 0.17 0.18 0.19
Depth − Microns
30
40
50
60
70
80
90
ycneiciffE
−% B
G
R
Orders Collected
±1, ±2, and ±3 orders for Red and Green
±1, ±2, ±3, and ±4 orders for Blue
8.5 µm ribbon width
0.5 µm ribbon gap
Actuation Depth (µm)
Diffraction Efficiency (
%)
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Vertical Resolution (device pixels) 1080 2K – 4K
Horizontal Resolution (scan) 1920 4K – 8K
Frame Rate 60 Hz 60 Hz
Display Bit Depth (per color) 11 bit >11 bit native
System Contrast (ANSI) 250:1 >500:1
System Contrast (frame-sequential) 1500:1 >5000:1
Data Stream Content interlaced progressive
Performance Demo Ultimate
GEMS Laser Projection System
High Image Quality
� Laser primaries for wide color gamut with bright, saturated colors
� Extremely high and scalable resolution for sharp, crisp images
� High native bit depth for billions of noise-free colors per pixel
� Reduced pixelization
� No motion artifacts
Simple GEMS-Based Design
� Alignment and defect tolerant design
� Digital operation
� Compact optical components
� Low-cost modulator and optics
Extendable System
� Easily scalable linear array
� Programmable aspect ratio
� Flexible frame rate
System Architecture Options
� Single chip or three chip
� Multilinear arrays for high performance at low cost
Technology Benefits
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Potential Applications
GEMS Laser Display
� Front projection
� Rear projection laser TV
� Data visualization and simulation
� Command and control
� Panoramic workstations
� Heads-up displays
� Mobile projectors
Other Systems
� Laser printing
� Maskless lithography
� Light modulation
� Programmable spectral imaging
� OFlight Training Simulator
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PROGRAMMABLE
SPECTRAL IMAGING
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Multispectral imaging systems are used in a variety of applications where
conventional RGB imaging does not adequately reveal spectral features of interest.
� Application areas: remote sensing, medical, and biological imaging, �
For example, the 4-band multispectral image below shows vegetation regions (false red) that
are not visible in the natural color image.
Challenge: Create an imaging system with a programmable spectral
transmission function that provides high-resolution line-scanned imaging.
Multispectral Imaging: Introduction
3-Band Natural Color
Image of Forest Fire
4-Band Image of Forest Fire
with False Color Infrared
DigitalGlobe DigitalGlobe
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Line
Image Dispersive
Element
(grating)
Filtered
Line Image
Linear
CCD
De-dispersive
Element
(grating)
GEMS acts as an optical “switch” that
passes (or extinguishes) narrow spectral
channels
System Concept
� Spectral band selection approach:
� Line image dispersed by a grating onto a Spatial Light Modulator (SLM)
� Electronic control of SLM provides selection of wavelength bands for imaging
� Selected bands are de-dispersed and re-imaged on a detector array
� 2D image is captured by line scanning across object of interest
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GEMS
DeviceInput
Slit
TransmissionGrating
Patterned
Mirror
Image
SensorScale: 40 x 25 cm
GEMS
DeviceInput
Slit
TransmissionGrating
Patterned
Mirror
Image
SensorScale: 40 x 25 cm
0th 1st 2nd−1st−2nd
Diffracted Orders
ClearMirror
Patterned MirrorOptical System
Transmissive
Double-Pass
Spectrometer
Key Features� High-speed spectral tuning
� Excellent image quality
� 32 spectral bands (current configuration) 450–566 nm: 12 bands with ~10 nm bandwidth566–634 nm: 14 bands with ~5 nm bandwidth634–692 nm: 6 bands with ~10 nm bandwidth
GEMS-Based Programmable Spectral Imager
GEMS acts as a
“spectral switch”
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Spectral Imager Breadboard
Test
Object
Camera
GEMS
device
Volume Phase
Grating
Lens Lens Patterned
Mirror
Lens
Test
Object
Camera
GEMS
device
Volume Phase
Grating
Lens Lens Patterned
Mirror
Lens
Imaging Axis
Spectral Axis
Active Area: 10.8 mm x 19.44 mm
Imaging Axis
Spectral Axis
Active Area: 10.8 mm x 19.44 mm
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Entire Image
(17 mm of 19.44 mm)
Enlarged 4X
Enlarged 16X
Test Object
Ronchi ruling (12 lp/mm)
Camera
Olympus E-1 (5 megapix)
Breadboard Image Quality
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All Bands
Blue Band
(20 nm)
Red & Blue Bands
(20 nm each)
Red Band
(20 nm)
Green Band
(20 nm)
Spectral Selection with Slide Translation
40550 560 570 580 590 600 610 620 630 640 650
Wavelength (nm)
Intensity (arb. units)
Single 90 nm
Dual 40 nm
Dual 30 nm
Dual 20 nm
Dual 10 nm
550 560 570 580 590 600 610 620 630 640 650
Wavelength (nm)
Intensity (arb. units)
Single 90 nm
Dual 40 nm
Dual 30 nm
Dual 20 nm
Dual 10 nm
555 560 565 570 575 580 585 590 595 600 605 610 615
Wavelength (nm)Intensity (arb. units)
5 nm
40 nm
Fully Programmable Spectral Bands
Programmable
Bandwidth
Multiple Programmable
Spectral Bands
41
An Interesting CombinationO
Programmable Spectral Imaging and Broad Gamut Display
Both with GEMS-based Systems
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Device ON
Incident
Beam
Diffracted
Beams
Diffracted
Beams
ΛΛΛΛ Sapphire Display
1080 X 1920
Monochrome Display
256 X 455
RGB Laser Display
256 X 455
Invention of
GEMS Device
1st Operational
GEMS Device
Base Device
Patent (6,307,663)
Base Display
Patent (6,411,425)
Spectral Imager
Device & System
2007
2008
Spectral Imager
6-Band Demo
XGA Display
Evaluation Kit
GEMS Technology: Timeline and Milestones
Grating ElectroMechanical System
GEMS Project
GEMS Display
Project
Ultratech Nano160
(1X projection; backside alignment) TEL Mark VII Coat/
Develop Track
LPCVD and Atmospheric
Furnace Processes
Chemical-
Mechanical
Polishing
and GrindingVeeco 3-Chamber Sputter Tool
Ultratech XLS
Stepper
(4X projection;
0.35 µm
resolution)
ITC MEMS Wafer Fab
Leybold Reactive Evaporator
for Optical Glasses
Xactix XeF2 Sacrificial EtchSTS Si
Deep RIELAM Alliance
Cluster Tool
ITC MEMS Wafer Fab
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Suss ABC200 Automated Wafer Bond Cluster Plating Bench
Asymtek Automated Fluid
Dispensing system Ohmcraft Micropen
Flip Chip
Bonders
SEC 860 Omnibonder
Suss FC150
Hesse & Knipps Automated
Wedge Wirebonder
ADT 7200 Automated
Dicing Saw
ITC MEMS Packaging
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ITC Laser Microscopy System for GEMS Device Screening
He-Ne
De
tec
tor
Mic
ros
co
pe
GEMS Diffracted Orders
Near Detector
Laser, Optics
& Detector
Laser, Optics & Detector
• Custom-modified high-quality
microscope with laser probe beam
for initial device screening
• System is configured to measure
GEMS diffracted orders
• Provides feedback on device
fabrication & packaging processes
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GEMS Wafer from ITC
49
1) M. W. Kowarz, J. C. Brazas and J. G. Phalen, “Conformal Grating Electromechanical Systems
(GEMS) for High-Speed Digital Light Modulation,” IEEE 15th International MEMS Conference Digest,
pgs. 568-573 (2002).
2) J. D. Newman, M. W. Kowarz, J. G. Phalen, P. P. Lee and A. D. Cropper, “MEMS Programmable
Spectral Imaging System for Remote Sensing,” Spaceborne Sensors III, SPIE Proc. Vol. 6220, pgs.
53-61 (2006).
3) M. W. Kowarz, J. G. Phalen and C. J. Johnson, “Line-Scanned Laser Display Architectures Based
on GEMS Technology: From Three-Lens Three-Chip Systems to Low-Cost Optically Efficient Trilinear
Systems,” SID Symposium Digest, Vol. 37, pgs. 1908-1911 (2006).
4) J. Agostinelli, M. W. Kowarz, D. Stauffer, T. Madden, and J. G. Phalen, “GEMS: A Simple Light
Modulator for High-Performance Laser Projection Display,” ITE/SID 13th International Display
Workshops (IDW’06), pgs. 1579-1582 (2006).
References