From Black-Body Radiation to Next-Generation Electronics

C.T. Liu 2014.11.19

Contents:

1. From Black-Body Radiation to Transistors

2. Semiconductor Technologies

3. Display Technologies

4. Lighting Technologies

5. 3D Image Systems

6. Conclusion

Planck discovered the empirically fitting function, and constructed a physical derivation of this law. In 1901, he expressed ϵ = h ν . h is now known as Planck's constant. Ultimately, Planck's law of black-body radiation contributed to Einstein's concept of quanta of light,

which became the fundamental basis for the development of quantum mechanics.

From Black-Body Radiation to Quantum Mechanics

From Quantum Mechanics to Transistors

Thickness Variation

(a)

(b)

(c)

Poly-Si Gate

Si Substrate

STI Isolation

<100>

<111>

2.5 nm 3.2 nm

4.2 nm

1.8 nm

(d)

<111>

4.2 nm

2 nm

(e)

3 nm 2.5 nm

Interface imperfect bonds can be studied with high-resolution XPS.

RTO

RT-N2O

Z.H. Lu, “Synchrotron and Conventional

Photoemission Studies of Oxides and N2O

Oxynitrides,” in “Fundamental Aspects of Ultrathin

Dielectrics on Si-Based Devices,” edited by E.

Garfunkel et al., Kluwer Academic Publishers,

Netherlands, 1998, p.49.

Inte

nsity (

arb

. u

nit)

Binding Energy (eV)

Sub-Oxide Structures

1. N-1s binding energy ~ 397.6eV,

same as Si3N4.

2. Longer oxidation increases

the binding energy toward

398.4 eV of Six=N-O3-x.

3. Wet-oxidation also shifts the binding

energy to 398.4 eV.

397

397.5

398

398.5

399

0 1 2 3 4 5

Distance above Si/SiO2 Interface (nm)

N-1

s B

indi

ng E

nerg

y (e

V)

tox= 5nm, 800oC, 2x1014/cm2 N+ I/I

Six=N-O3-x

N Si3

Nitrogen Binding Energy

Substrate Defects

A) After S/D I/I, before RTA

B) After 1050oC 10s RTA

a-Si

0.16mm

C) Top-Plan View TEM S/D

S/D

Channel + Spacers 10 nm

D) XTEM along the channel to S/D

D

SF

SF

SF

[110] projection

(111) (111)

Interconnect Challenges

1975 1980 1985 1990 1995 2000

1,000

100

10

1

0.1

0.01

0.001

Si MOSFET

Si Bipolar

GaAs MESFET

GaAs HBT

GaAs HEMT

SiGe Bipolar

InP HBT

InP HEMT

2005

Cu

toff F

req

ue

ncy (

in G

Hz)

1970

OC-768

40 Gbps

OC-192

10 Gbps

OC- 48

2.5 Gbps

OC- 12

622Mbps

* The cutoff frequency of the device needs to be at least 4 times

higher than the clock rate.

Communication IC Technology Roadmap

Time

High-Speed Technologies

Si MOS

Parameters for Device Breakdown: • bandgap energy • doping density - short-channel FETs • dielectric breakdown - short-channel MOS • space-charge limiting current - collector current of BJTs

InP HBT Device SEMs

250

200

150

100

50

0

GH

z

12mA 10 8 6 4 2 0 Ic

ft ~ 144 GHz @ 4.83 mA

fmax~ 197 GHz @ 4.83 mA

X4Y2

250

200

150

100

50

0

GH

z

12mA 10 8 6 4 2 0 Ic

ft ~ 136 GHz @ 5.28 mA

fmax ~ 154 GHz @ 5.28 mA

X3Y2

ft fmax Plot Lot 51, wafer 203, RF tester 1.6 x 3.4 ------- ft ------- fmax

100nA

1µA

10µA

100µA

1mA

10mA

1.0V 0.8 0.6 0.4 0.2 0.0 Vbe

70

60

50

40

30

20

10

0

Be

ta

6

5

4

3

2

1

0

I C [m

A]

1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0

V CE

[V]

DC degradation after RF excitation Lot 51, wafer 203, RF tester 1.6 x 3.4 ------- before ------- after

InP DHBT --- RF Performance

40Gb/s Driver Amplifier

Output up to 4.5V (5V simulated)

Bias for this measurement: Vee=-5.3V, I=190 mA Vcc1=0.6V Vcc2=2.5V, I=50 mA Very low power consumption: 1.2 W!!

• most of jitter caused by 40 Gb/s source • rise time @ 40Gb/s limited by source, and on-wafer measurement: cables and probes

40 Gb/s

20 Gb/s Very compact circuit size:

850x850 mm

High Gain-BW Distributed Amplifier for 40Gbps

-30

-20

-10

0

10

20

0 20 40 60 80 100

S-p

aram

eter

s [d

B]

Frequency [GHZ]

S11

S21

S22

17 dB

70GHz

Gain=17 dB

BW>70 GHz

GBW>500 GHz

(record GBW for single-stage DA)

Size:0.7x2mm

Metal Ta2O5 MIM Capacitor

TiN

10-nm

Ta2O5

W-plug (WN2)

MTJ

4 – 5 ML MgO

MRAM: Spintronics

free layer

capping layer

tunneling MgO

pinned layer

seed layer

Key Tools:

multilayer PVD cluster

damage-free etcher with protection capping

Spin-Torque Transfer (STT)

Field or Current

AP P P AP

free pinned

torque

Ref: Magnetic Memory

(Cambridge University Press)

free pinned

Contents:

1. From Black-Body Radiation to Transistors

2. Semiconductor Technologies

3. Display Technologies

4. Lighting Technologies

5. 3D Image Systems

6. Conclusion

Generation Migration in TFT-LCD Mother Glass size grew 1.5 times every 1.5 years

TFT LCD Generation Migration

100.0

1000.0

10000.0

1990 1992 1994 1996 1998 2000 2002 2004 2006

Year

Gla

ss A

rea

(k-m

mxm

m)

G3 550x670

G5 1100x1300

G6 1500x1850

G7.5 1950x2250

G8 2160x2460

G1 300x400

G2 370x470

G3.5 600x720

G6

G8 Relative Glass Size in Each Generation

G5 1m x 1m

G4

G3

G2

G7.5 2m x 2m

Revolution Waves of TFT LCD

’91 ’98 ’02 Notebook Monitor TV

1st Wave: Product Introduction – Make The World Flat!

G5 G2 G3 G3.5 G4 G1 G7 G6

’96 ’97 ’04 ’05 ’91 ’94 ’00 ’02 ’98 ’95 ’99 ’06

G7.5

2nd Wave: Performance Enrichment – Make The World Gorgeous!

1%

10%

Power Utilization Material Utilization

3rd Wave: Power & Material Efficiency – Make The World Green!

4th Wave: Functions for Human Interface – Make The World No Gap!

Importance of High Contrast Ratio

Contrast Ratio Improvement can increase dark color performance.

Advanced MVA-mobile Technology

AMVA-mobile Conventional Features

• Wide Viewing Angle

(160o / 160o)

• Low Color Washout

• High Contrast Ratio

(2100:1)

Product Applications

• Mobile Phone

• DSC

• Mobile TV

Under shadow 30000 Lux

Direct sunlight 80000 Lux

ATR-MVA TMR+TN/WV

Sunlight Readable Display

Advanced Simulated Pulsed Driving

ASPD-mobile Conventional

Features

Fast response time to reduce motion blur

(4ms Grey to Grey / 8ms MPRT)

Image Processing for Vivid Picture Saturation Enhancement

Blue

Green

Red

original color vivid color

white point

Image Gamut Extension

L

h C

a*

b*

[R]

[Y]

[G]

[C]

[B]

[M]

[RY][YG]

[GC]

[CB][BM]

[MR]

a*

b*

a*

b*

[R]

[Y]

[G]

[C]

[B]

[M]

[RY][YG]

[GC]

[CB][BM]

[MR]

• Hue Division – Outline panel's color characteristics – Find image gamut boundaries – Choose certain hue pages to decide image color templates

Display's Color Gamut Hue Pages Hue Division

High Dynamic Contrast

Convolution Process Measure PSF (Point Spread Function) Calculate LED and LCD Control Signals.

PSF - Center

PSF - Corner

PSF - Side

High Dynamic Contrast

Lmax = 418 cd/m2

Lmin = 0.04 cd/m2

CR = 418 / 0.04 = 10,450

Current = 9.5 A

Voltage = 10.95 V

Power Saving = 58% = 1－(9.5 × 10.95) / 245.28

* LED B/L Full ON = 22.4A × 10.95V = 245.28 W

CABC Function

CABC Structure (saving power 50%)

CABC

Remark ’08 ’07 H2 ’07 H1 Technology

CABC FPGA Proto type

Integrated IC cut1 ’07 1Q

’07 3Q ’07 4Q

MP

•Purpose

•To detect the image content and keep the same image quality with dimming.

•To reduce power consumption 50% in darker image.

dark

area

dark

area

dark

area

Brightest

Pixel

Mo

du

latio

n f

orc

e

gray level gray level gray level

No

. o

f P

ixe

l

bla

ck

ra

tio

Ma

x.

inte

ns

ity

output original

Luminance

output original

Luminance

output original

Luminance

No

. o

f P

ixe

l

No

. o

f P

ixe

l

input gray level

ou

tpu

t g

ray le

ve

l

input gray level

ou

tpu

t g

ray le

ve

l

input gray level

ou

tpu

t g

ray le

ve

l

dark

area

dark

area

dark

area

Brightest

Pixel

Mo

du

latio

n f

orc

e

gray level gray level gray level

No

. o

f P

ixe

l

bla

ck

ra

tio

Ma

x.

inte

ns

ity

output original

Luminance

output original

Luminance

output original

Luminance

No

. o

f P

ixe

l

No

. o

f P

ixe

l

input gray level

ou

tpu

t g

ray le

ve

l

input gray level

ou

tpu

t g

ray le

ve

l

input gray level

ou

tpu

t g

ray le

ve

l

Image information

Back light Gain

Gamma curve

Original

CABC

C.i.1

Dynamic Backlight + Dynamic Contrast + Dynamic Gamma

Improve contrast and detail Lower Power consumption

Contrast Ratio: 300 Contrast Ratio: 700 Power saving 50%

Original

Original

CABC

CABC

C.i.1

Slim & Light

0.9mm slim boarder (2.2”) 0.69mm mobile module (1.9”)

Features

•Possesses the slim border of 0.9mm

on both the right and left sides

•The upper side border width of

merely 1.2mm

•Be able to increase the active area

and enhance the image sleekness

Features

•Implement the latest glass thinning

technology and shrink the thickness

of related components

•13% thinner than the thickness of a

credit card

•Weight of 2.2 grams

•400-nit high brightness

•Accomplish a multitude of features -

light, slim, elegant and bright

Precision Machinery Technology -- integrated micro-optics, molding, thermal

Roll-to-Roll 3mm Direct Printing Patterning Technology Revolution

Replace 7 process equipment with 1

Increase material usage from 5% to 95%

1-step

fine-line direct printing

Future Now

7-step process

film deposition

photo resist coating

resist baking

photo exposure

resist development

film etching

resist stripping

>>>

>>>

>>>

>>>

>>>

>>>

>>>

>>>

Industry status: sheet process, > 30mm

Komori-ITRI: roll-to-roll process, 3mm

3mm

30mm

Contents:

1. From Black-Body Radiation to Transistors

2. Semiconductor Technologies

3. Display Technologies

4. Lighting Technologies

5. 3D Image Systems

6. Conclusion

OLED Lighting Features

LED Spectra

Wavelength (nm)

Florescent Spectra

Wavelength (nm)

Simple: surface light source

Innovative: thin and light

Harmless: UV-less, IR-less, Hg-free

Truthful: closest to natural light

Beautiful: high color rendering

Comfortable: diffusive, non-glare

Power & material saving

Bendable

Very Thin 0.3 mm thick

Very Light 0.05 g/cm2

Wavelength (nm)

OLED Spectra

customized

transparent

flexible luminaire designs

Interior designs

See through it

Audi OLED desk lamps

flexible OLED lighting large area and transparent

curved

3D

lamps

Contents:

1. From Black-Body Radiation to Transistors

2. Semiconductor Technologies

3. Display Technologies

4. Lighting Technologies

5. 3D Image Systems

6. Conclusion

Capture the World in 3D

Object Reconstruction – Handheld 3D Scanner

Comparisons of 3D Scanners

3D Systems

Sense

Resolution 1 mm

Accuracy 0.9 mm

Measurement

Rate < 5 fps

Working

Distance 35 ~300cm

Scan Area 57.5度

Weight 0.38 kg

Color Yes

Light Source IR Laser

Price US 419

電光所 (Target)

0.5~1 mm Resolution

0.1mm Accuracy

10 fps Measurement

Rate

35 ~ 65cm Working

Distance

45度 Scan Area

< 1.3kg Weight

Yes Color

IR LED Light Source

Price

Google I/O 2014/6/26 : https://www.google.com/events/io/schedule/session/f47f19a5-63b9-e311-b297-00155d5066d7

Indoor Space Reconstruction - Google

Tango project:

stereo camera combined with tablets and smartphones

Staircase reconstruction

Room reconstruction

• Stage 1: On-Site Control

From On-Site Control to Cloud Control

• Stage 2: Cloud Control

on-board with Intel 4-Core i7-3612QE, 2.1 GHz image process、SLAM、autopilot

image process、SLAM Flight path setting autopilot

Rendering Flight path control

Flight path control

System Operation - Initialization

• Detect environment complexity • Initialize position

① ②

• Assign flight path patterns (eq., 之) from learning database

System Operation - Scanning

3D modeling in cloud, real-time adjusting flight path

(replace loop closure functions)

RGB+IR Reflection Detection

SLAM/PTAM: IMU

Visual odometry

Data Fusion Filter

3D Modelling (space + object)

Localization + Obstacle

Detection

Flight Control

Hardware: MAV

• Ascending Technologies (Germany), NTD 50k: on-board with Intel 4-Core i7-3612QE, 2.1 GHz for autopilot

• Parrot AR. Drone 2.0 (France), NTD 15k: iPod and android have App for easy controls

• 雷虎科技 (TW) : carrying capacity 200g

• GETOP (TW) : carrying capacity 4.5kg

including camera

MAV: micro air vehicle or micro aerial vehicle

Summary

1. It is a very exciting journey to do research.

2. From black-body radiation (1901) to next-generation electronics (2020-2050), we continue to explore amazing sciences and technologies.

3. Many frontier technologies will be in production 20 years from now and change our thinking completely.