FQP6N90C / FQPF6N90C - Farnell element14 · ©2006 Fairchild Semiconductor Corporation ... PD Power...

10
December 2013 Thermal Characteristics FQP6N90C / FQPF6N90C N-Channel QFET ® MOSFET 900 V, 6.0 A, 2.3 Ω Description ©2006 Fairchild Semiconductor Corporation FQP6N90C / FQPF6N90C Rev. C1 www.fairchildsemi.com 1 FQP6N90C / FQPF6N90C — N-Channel QFET ® MOSFET This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features 6.0 A, 900 V, R DS(on) = 2.3 (Max.) @ V GS = 10 V, I D = 3.0 A Low Gate Charge (Typ. 30 nC) Low Crss (Typ. 11 pF) 100% Avalanche Tested Absolute Maximum Ratings T C = 25°C unless otherwise noted. Symbol Parameter FQP6N90C FQPF6N90C Unit R θJC Thermal Resistance, Junction-to-Case, Max. 0.75 2.25 °C/W R θCS Thermal Resistance, Case-to-Sink Typ, Max. 0.5 -- °C/W R θJA Thermal Resistance, Junction-to-Ambient, Max. 62.5 62.5 °C/W TO-220 G D S TO-220F G D S G S D * Drain current limited by maximum junction temperature. Symbol Parameter FQP6N90C FQPF6N90C Unit V DSS Drain-Source Voltage 900 V I D Drain Current - Continuous (T C = 25°C) * 6 6 A - Continuous (T C = 100°C) 3.8 3.8 * A I DM Drain Current - Pulsed (Note 1) 24 24 * A V GSS Gate-Source Voltage ± 30 V E AS Single Pulsed Avalanche Energy (Note 2) 650 mJ I AR Avalanche Current (Note 1) 6 A E AR Repetitive Avalanche Energy (Note 1) 16.7 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P D Power Dissipation (T C = 25°C) 167 56 W - Derate above 25°C 1.43 0.48 W/°C T J , T STG Operating and Storage Temperature Range -55 to +150 °C T L Maximum lead temperature for soldering, 1/8" from case for 5 seconds 300 °C

Transcript of FQP6N90C / FQPF6N90C - Farnell element14 · ©2006 Fairchild Semiconductor Corporation ... PD Power...

Page 1: FQP6N90C / FQPF6N90C - Farnell element14 · ©2006 Fairchild Semiconductor Corporation ... PD Power Dissipation (TC = 25°C) 167 56 W ... FQP6N90C / FQPF6N90C — N-Channel QFET ...

December 2013

Thermal Characteristics

FQP6N90C / FQPF6N90CN-Channel QFET® MOSFET900 V, 6.0 A, 2.3 Ω

Description

©2006 Fairchild Semiconductor Corporation FQP6N90C / FQPF6N90C Rev. C1

www.fairchildsemi.com1

FQP6N

90C / FQ

PF6N90C

— N

-Channel Q

FET® M

OSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Features• 6.0 A, 900 V, RDS(on) = 2.3 Ω (Max.) @ VGS = 10 V,

ID = 3.0 A

• Low Gate Charge (Typ. 30 nC)

• Low Crss (Typ. 11 pF)

• 100% Avalanche Tested

Absolute Maximum Ratings TC = 25°C unless otherwise noted.

Symbol Parameter FQP6N90C FQPF6N90C UnitRθJC Thermal Resistance, Junction-to-Case, Max. 0.75 2.25 °C/WRθCS Thermal Resistance, Case-to-Sink Typ, Max. 0.5 -- °C/WRθJA Thermal Resistance, Junction-to-Ambient, Max. 62.5 62.5 °C/W

TO-220

GDS TO-220F

GDS

G

S

D

* Drain current limited by maximum junction temperature.

Symbol Parameter FQP6N90C FQPF6N90C UnitVDSS Drain-Source Voltage 900 VID Drain Current - Continuous (TC = 25°C) *66 A

- Continuous (TC = 100°C) 3.8 3.8 * AIDM Drain Current - Pulsed (Note 1) 24 24 * AVGSS Gate-Source Voltage ± 30 VEAS Single Pulsed Avalanche Energy (Note 2) 650 mJIAR Avalanche Current (Note 1) 6 AEAR Repetitive Avalanche Energy (Note 1) 16.7 mJdv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/nsPD Power Dissipation (TC = 25°C) 167 56 W

- Derate above 25°C 1.43 0.48 W/°CTJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

TLMaximum lead temperature for soldering, 1/8" from case for 5 seconds

300 °C

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Package Marking and Ordering Information

©2006 Fairchild Semiconductor Corporation FQP6N90C / FQPF6N90C Rev. C1

www.fairchildsemi.com2

FQP6N

90C / FQ

PF6N90C

— N

-Channel Q

FET® M

OSFET

Notes:1. Repetitive rating : pulse-width limited by maximum junction temperature.2. L = 34 mH, IAS = 6 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.3. ISD ≤ 6 A, di/dt ≤ 200 A/µs , VDD ≤ BVDSS, starting TJ = 25°C.4. Essentially independent of operating temperature.

Part Number Top Mark Package Reel Size Tape Width QuantityFQP6N90CFQP6N90C TO-220 N/A N/A 50 units

Packing MethodTube

TO-220F Tube N/A N/A 50 unitsFQPF6N90CFQPF6N90C

Electrical Characteristics TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Off CharacteristicsBVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 900 -- -- V∆BVDSS / ∆TJ

Breakdown Voltage Temperature Coefficient

ID = 250 µA, Referenced to 25°C -- 1.07 -- V/°C

IDSS Zero Gate Voltage Drain CurrentVDS = 900 V, VGS = 0 V -- -- 10 µAVDS = 720 V, TC = 125°C -- -- 100 µA

IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nAIGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 3.0 -- 5.0 VRDS(on) Static Drain-Source

On-ResistanceVGS = 10 V, ID = 3 A -- 1.93 2.3 Ω

gFS Forward Transconductance VDS = 50 V, ID = 3 A -- 5.5 -- S

Dynamic CharacteristicsCiss Input Capacitance VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

-- 1360 1770 pFCoss Output Capacitance -- 110 145 pFCrss Reverse Transfer Capacitance -- 11 15 pF

Switching Characteristics td(on) Turn-On Delay Time VDD = 450 V, ID = 6 A,

RG = 25 Ω

(Note 4)

-- 35 80 nstr Turn-On Rise Time -- 90 190 nstd(off) Turn-Off Delay Time -- 55 120 nstf Turn-Off Fall Time -- 60 130 nsQg Total Gate Charge VDS = 720 V, ID = 6 A,

VGS = 10 V (Note 4)

-- 30 40 nCQgs Gate-Source Charge -- 9.0 -- nCQgd Gate-Drain Charge -- 12 -- nC

Drain-Source Diode Characteristics and Maximum RatingsIS Maximum Continuous Drain-Source Diode Forward Current -- -- 6.0 AISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 24 AVSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 6 A -- -- 1.4 Vtrr Reverse Recovery Time VGS = 0 V, IS = 6 A,

dIF / dt = 100 A/µs -- 630 -- ns

Qrr Reverse Recovery Charge -- 6.9 -- µC

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©2006 Fairchild Semiconductor Corporation FQP6N90C / FQPF6N90C Rev. C1

www.fairchildsemi.com3

FQP6N

90C / FQ

PF6N90C

— N

-Channel Q

FET® M

OSFET

!

10-1 100 1010

500

1000

1500

2000Ciss = Cgs + Cgd (Cds = shorted)

= Cgd

dsCoss = C + CgdCrss

※ Notes :1. VGS = 0 V2. f = 1 MHz

Crss

Coss

Ciss

Capa

citan

ce [p

F]

0 5 10 15 20 25 30 350

2

4

6

8

10

12

VDS = 450V

VDS = 180V

VDS = 720V

※ Note : ID = 6A

V GS, G

ate-

Sour

ce V

oltag

e [V

]

000 3 12 15 181.5

2.0

2.5

3.0

3.5

4.0

4.5

VGS = 20V

VGS = 10V

※ Note : TJ = 25

RDS

(ON)

[Ω],

Drain

-Sou

rce

On-R

esist

ance

ID, Drain Current [A]0.2 0.4 0.6 0.8 1.0 1.2 1.4

10-1

100

101

150

※ Notes :1. VGS = 0V2. 250μ s Pulse Test

25

I DR, R

ever

se D

rain

Curre

nt [A

]

VSD, Source-Drain voltage [V]

VDS, Drain-Source Voltage [V]

Figure 5. Capacitance Characteristics

QG, Total Gate Charge [nC]

Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variation vsDrain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage Variation with Source Current

and Temperature

Figure 2. Transfer Characteristics

VDS, Drain-Source Voltage [V]

Figure 1. On-Region Characteristics

10-1 100 10110-2

10-1

100

101

VGSTop : 15.0 V 10.0 V

8.0 V7.0 V6.5 V6.0 V

Bottom : 5.5 V

※ Notes :1. 250μ s Pulse Test2. TC = 25

I D, D

rain

Curre

nt [A

]

22 8 1010-1

100

101

150oC

25oC -55oC

※ Notes :1. VDS = 50V2. 250μ s Pulse Test

I D, D

rain

Curre

nt [A

]

4

VGS, Gate-Source Voltage [V]6

6 9

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©2006 Fairchild Semiconductor Corporation FQP6N90C / FQPF6N90C Rev. C1

www.fairchildsemi.com4

FQP6N

90C / FQ

PF6N90C

— N

-Channel Q

FET® M

OSFET

Typical Characteristics (Continued)

100 101 102 10310-2

10-1

100

101

102

10 µs

DC

10 ms1 ms

100 µs

Operation in This Area is Limited by R DS(on)

※ Notes :1. TC = 25 oC2. TJ = 150 oC3. Single Pulse

I D, D

rain

Curre

nt [A

]

VDS, Drain-Source Voltage [V]100 101 102 103

10-2

10-1

100

101

102

10 µs

DC

10 ms

1 ms

100 µs

Operation in This Area is Limited by R DS(on)

※ Notes :1. TC = 25 oC2. TJ = 150 oC3. Single Pulse

I D, D

rain

Curre

nt [A

]

VDS, Drain-Source Voltage [V]

Figure 9-1. Maximum Safe Operating Areafor FQP6N90C

Figure 10. Maximum Drain Currentvs Case Temperature

Figure 7. Breakdown Voltage Variationvs Temperature

Figure 8. On-Resistance Variationvs Temperature

Figure 9-2. Maximum Safe Operating Areafor FQPF6N90C

-100 -50 0 50 100 150 2000.8

0.9

1.0

1.1

1.2

※ Notes :1. VGS = 0 V2. ID = 250 μA

BVDS

S,(

Norm

alize

d)Dr

ain-S

ource

Bre

akdo

wn V

oltag

e

TJ, Junction Temperature [oC]

-100 -50 0 50 100 150 2000.0

0.5

1.0

1.5

2.0

2.5

3.0

※ Notes :1. VGS = 10 V2. ID = 3.0 A

RDS

(ON)

, (No

rmali

zed)

Drain

-Sou

rce

On-R

esist

ance

TJ, Junction Temperature [oC]

25 50 75 100 125 1500

2

4

6

8

I D, D

rain

Curre

nt [A

]

TC, Case Temperature []

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©2006 Fairchild Semiconductor Corporation FQP6N90C / FQPF6N90C Rev. C1

www.fairchildsemi.com5

FQP6N

90C / FQ

PF6N90C

— N

-Channel Q

FET® M

OSFET

Typical Characteristics (Continued)

1 0 -5 1 0 -4 1 0 -3 1 0 -2 1 0 -1 1 0 0 1 0 1

1 0 -2

1 0 -1

1 0 0

※ N o te s : 1 . Z

θ JC ( t) = 2 .3 /W M a x . 2 . D u ty F a c to r,

Z1D = t /t2

3 . T JM - T C P = D M *θ JC ( t)

s in g le p u ls e

D = 0 .5

0 .0 2

0 .2

0 .0 5

0 .1

0 .0 1

1 0 -5 1 0 -4 1 0 -3 1 0 -2 1 0 -1 1 0 0 1 0 1

1 0 -2

1 0 -1

1 0 0

※ N o te s : 1 . Z (t) = 0 .75 /W M ax .

2 . Dθ

u tJCy F a c to r, D = t1/t2

3 . T JM - T C = P D M Z*θ JC( t)

s in g le p u ls e

D = 0 .5

0 .0 2

0 .2

0 .0 5

0 .1

0 .0 1

t1, S q u a re W a v e P u ls e D u ra t io n [s e c ]

Figure 11-1. Transient Thermal Response Curve for FQP6N90C

t 1, S q u a re W a v e P u ls e D u ra t io n [s e c ]

Figure 11-2. Transient Thermal Response Curve for FQPF6N90C

t1

PDM

t2

t1

PDM

t2

Z JC

(t), T

herm

al R

espo

nse

[o C/W

]Z

JC(t)

, The

rmal

Res

pons

e [o C

/W]

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Figure 12. Gate Charge Test Circuit & Waveform

Figure 13. Resistive Switching Test Circuit & Waveforms

Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

VGS

VDS

10%

90%

td(on) tr

t on t off

td(off) tf

VDD

10V

VDSRL

DUT

RG

VGS

VGS

VDS

10%

90%

td(on) tr

t on t off

td(off) tf

VDD

10V

VDSRL

DUT

RG

VGS

VGS

Charge

VGS

10VQg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50KΩ

200nF12V

Same Typeas DUT

Charge

VGS

10VQg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50KΩ

200nF12V

Same Typeas DUT

EAS = L IAS2----

21 --------------------

BVDSS - VDD

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

RG

L

I D

t p

EAS = L IAS2----

21EAS = L IAS

2----21----21 --------------------

BVDSS - VDD

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

RG

LL

I DI D

t p

VGSVGS

IG = const.

©2006 Fairchild Semiconductor Corporation FQP6N90C / FQPF6N90C Rev. C1

www.fairchildsemi.com6

FQP6N

90C / FQ

PF6N90C

— N

-Channel Q

FET® M

OSFET

Page 7: FQP6N90C / FQPF6N90C - Farnell element14 · ©2006 Fairchild Semiconductor Corporation ... PD Power Dissipation (TC = 25°C) 167 56 W ... FQP6N90C / FQPF6N90C — N-Channel QFET ...

Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

VDS

+

_

DriverRG

Same Type as DUT

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

VDD

LI SD

10VVGS

( Driver )

I SD

( DUT )

VDS

( DUT )

VDD

Body DiodeForward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse WidthGate Pulse Period

--------------------------

DUT

VDS

+

_

DriverRG

Same Type as DUT

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

VDD

LLI SD

10VVGS

( Driver )

I SD

( DUT )

VDS

( DUT )

VDD

Body DiodeForward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse WidthGate Pulse Period

--------------------------D =Gate Pulse WidthGate Pulse Period

--------------------------

©2006 Fairchild Semiconductor Corporation FQP6N90C / FQPF6N90C Rev. C1

www.fairchildsemi.com7

FQP6N

90C / FQ

PF6N90C

— N

-Channel Q

FET® M

OSFET

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www.fairchildsemi.com8

FQP6N

90C / FQ

PF6N90C

— N

-Channel Q

FET® M

OSFET

Mechanical Dimensions

Figure 16. TO220, Molded, 3-Lead, Jedec Variation AB

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-ically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO220-003

©2006 Fairchild Semiconductor Corporation FQP6N90C / FQPF6N90C Rev. C1

Page 9: FQP6N90C / FQPF6N90C - Farnell element14 · ©2006 Fairchild Semiconductor Corporation ... PD Power Dissipation (TC = 25°C) 167 56 W ... FQP6N90C / FQPF6N90C — N-Channel QFET ...

©2006 Fairchild Semiconductor Corporation FQP6N90C / FQPF6N90C Rev. C1

www.fairchildsemi.com9

FQP6N

90C / FQ

PF6N90C

— N

-Channel Q

FET® M

OSFET

Mechanical Dimensions

Figure 17. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-ically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003

Page 10: FQP6N90C / FQPF6N90C - Farnell element14 · ©2006 Fairchild Semiconductor Corporation ... PD Power Dissipation (TC = 25°C) 167 56 W ... FQP6N90C / FQPF6N90C — N-Channel QFET ...

©2006 Fairchild Semiconductor Corporation FQP6N90C / FQPF6N90C Rev. C1

www.fairchildsemi.com10

TRADEMARKSThe following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used here in:1. Life support devices or systems are devices or systems which, (a) are

intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, orsystem whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety oreffectiveness.

PRODUCT STATUS DEFINITIONSDefinition of Terms

AccuPower™AX-CAP®*BitSiC™Build it Now™CorePLUS™CorePOWER™CROSSVOLT™CTL™Current Transfer Logic™DEUXPEED®

Dual Cool™EcoSPARK®

EfficentMax™ESBC™

Fairchild®

Fairchild Semiconductor®FACT Quiet Series™FACT®

FAST®

FastvCore™FETBench™FPS™

F-PFS™FRFET®

Global Power ResourceSM

GreenBridge™Green FPS™Green FPS™ e-Series™Gmax™GTO™IntelliMAX™ISOPLANAR™Marking Small Speakers Sound Louder and Better™MegaBuck™MICROCOUPLER™MicroFET™MicroPak™MicroPak2™MillerDrive™MotionMax™mWSaver®OptoHiT™OPTOLOGIC®

OPTOPLANAR®

PowerTrench®

PowerXS™Programmable Active Droop™QFET®

QS™Quiet Series™RapidConfigure™

Saving our world, 1mW/W/kW at a time™SignalWise™SmartMax™SMART START™Solutions for Your Success™SPM®

STEALTH™SuperFET®

SuperSOT™-3SuperSOT™-6SuperSOT™-8SupreMOS®

SyncFET™

Sync-Lock™®*

TinyBoost®TinyBuck®

TinyCalc™TinyLogic®

TINYOPTO™TinyPower™TinyPWM™TinyWire™TranSiC™TriFault Detect™TRUECURRENT®*SerDes™

UHC®

Ultra FRFET™UniFET™VCX™VisualMax™VoltagePlus™XS™

®

Datasheet Identification Product Status Definition

Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Preliminary First ProductionDatasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

ANTI-COUNTERFEITING POLICYFairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support.Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

Rev. I66

tm

®

FQP6N

90C / FQ

PF6N90C

— N

-Channel Q

FET® M

OSFET