Flatness ・ Light Point Defects - Sumitomo Electric...

2
Substrates Flatness ・ Light Point Defects Flatness ・ Light Point Defects Flatness GaAs InP Product Laser Diodes Semi-Insulating Guaranteed (Ref.) Typical Guaranteed (Ref.) Typical Size ≦2 ≦5 ≦10 ≦10 ≦15 ≦6 ≦6 ≦8 ≦6 ≦5 4"φ 6"φ 2"φ 3"φ 2"φ 3"φ 4"φ 1.3 1.5 10 ≦5 ≦10 ≦10 ≦15 ≦15 ≦9 ≦9 ≦10 ≦10 ≦10 10 ≦2 ≦4 ____ ____ 12 1.2 1.8 ____ ____ 10 PLTV(%) Guaranteed (Ref.) Typical Guaranteed (Ref.) Typical ≧90 ≧90 ____ ____ ____ ____ ____ ____ ____ ____ Guaranteed ≦1(15㎜□) 1.5 (20㎜□) ____ ____ ____ ____ ____ ____ ____ ____ 0.6 0.7 ____ ____ ____ ____ ____ ____ ____ ____ Surface Finish P/P P/P P/LE P/E P/LE P/P P/LE P/P P/P Warp(μmLTV(μmTIR(μmTTV(μmDefinitions of Flatness TTV TIR LTV PLTV Warp Total Thickness Variation: The difference between the highest and the lowest elevation of the top surface of a clamped wafer. The back surface referenced. Total Indicated Reading: The difference between the highest point above and the lowest point below the front surface referenced focal plane of a clamped wafer. 3 points on the front surface generally used. Local Thickness Variation: The difference between the highest point and the lowest point within a site of the top surface of a clamped wafer. The back surface referenced. Percent LTV: Percentage of sites on a wafer within the specified LTV value. The difference between the highest point above and the lowest point below the front surface referenced focal plane of an unclamped wafer. A least square fit on the front surface generally used. Light Point Defects Flatness Definitions of Flatness Light Point Defects Product InP GaAs VB (Semi-Insulating) Defect Size Size Guaranteed ≦40 ≦100 ≦20 ≦30 ≦30 (Ref.)Typical 10 30 10 10 ≧0.4 μm ≧1.2 μm 2 4"φ 6"φ 2"φ 3"φ 4"φ Pcs./Wafer TTV Referenced Focal Plane A B TIR =|A|+|B| LTV Focal Plane Focal Plane Focal Plane Referenced Focal Plane A B Warp =|A|+|B|

Transcript of Flatness ・ Light Point Defects - Sumitomo Electric...

8 Substrates

Flatness ・ Light Point DefectsFlatness ・ Light Point Defects

Flatness

GaAs

InP

Product

Laser

Diodes

Semi-Insulating

Guaranteed(Ref.) Typical

Guaranteed(Ref.) Typical

Size

≦2

≦5

≦10

≦10

≦15

≦6

≦6

≦8

≦6

≦5

4"φ

6"φ

2"φ

3"φ

2"φ

3"φ

4"φ

1.3

1.5

10

≦5

≦10

≦10

≦15

≦15

≦9

≦9

≦10

≦10

≦10

10

≦2

≦4 ____

____

12

1.2

1.8 ____

____

10

PLTV(%) Guaranteed

(Ref.) Typical

Guaranteed(Ref.) Typical

≧90

≧90 ____

____

____

____

____

____

____

____

Guaranteed

≦1(15㎜□)

≦1.5(20㎜□) ____

____

____

____

____

____

____

____

0.6

0.7 ____

____

____

____

____

____

____

____

Surface Finish

P/P

P/P

P/LE

P/E

P/LE

P/P

P/LE

P/P

P/P

Warp(μm) LTV(μm) TIR(μm) TTV(μm)

Definitions of Flatness

TTV

TIR

LTV

PLTV

Warp

Total Thickness Variation: The difference between the highest and the lowest elevation of the top surface of a clamped wafer. The back surface referenced.

Total Indicated Reading: The difference between the highest point above and the lowest point below the front surface referenced focal plane of a clamped wafer. 3 points on the front surface generally used.

Local Thickness Variation: The difference between the highest point and the lowest point within a site of the top surface of a clamped wafer. The back surface referenced.

Percent LTV: Percentage of sites on a wafer within the specified LTV value.

The difference between the highest point above and the lowest point below the front surface referenced focal plane of an unclamped wafer. A least square fit on the front surface generally used.

Light Point Defects

Flatness

Definitions of Flatness

Light Point Defects

Product

InP

GaAs VB (Semi-Insulating)

Defect SizeSizeGuaranteed

≦40

≦100

≦20

≦30

≦30

(Ref.)Typical

10

30

10

10

≧0.4μm

≧1.2μm2

4"φ

6"φ

2"φ

3"φ

4"φ

Pcs./Wafer

TTV

Referenced Focal Plane

AB TIR =|A|+|B|

LTVFocal Plane

Focal Plane

Focal Plane

Referenced Focal Plane

AB Warp =|A|+|B|

9 Substrates

Categories of Off-OrientationCategories of Off-Orientation

Clockwise(EJ)

Example of off-orientation

Surface

Orientation

(100)χ°off

toward

Off-Orientation

General

nearest

〈110〉

nearest

〈111〉A

nearest

〈111〉B

Specific

〔110〕

〔110〕

〔101〕

〔101〕

〔111〕

〔011〕

〔111〕

〔011〕

〔111〕

〔011〕

〔111〕

〔011〕

α

45°

225°

135°

315°

0°

180°

90°

270°

Case

A

B

C

D

E

F

G

H

Counter Clockwise(US)Surface

Orientation

(100)χ°off

toward

Off-Orientation

General

nearest

〈110〉

nearest

〈111〉A

nearest

〈111〉B

Specific

〔101〕

〔101〕

〔110〕

〔110〕

〔111〕

〔011〕

〔111〕

〔011〕

〔111〕

〔011〕

〔111〕

〔011〕

α

45°

225°

135°

315°

90°

270°

0°

180°

Case

I

J

K

L

M

N

O

P

Vector Normal to the Slice Surface

Case:G →(100)θ°off toward〔111〕

Example of off-orientation

Clockwise(EJ)

Planar Representation of Cubic FormPlanar Representation of Cubic Form

Example of off-orientation

Planar Representation of Cubic FormPlanar Representation of Cubic Form

Counter Clockwise(US)

Example of off-orientationCase:P →(100)θ°off toward〔111〕

off-orientation slice

〔111〕Vector Normal to the(111)planeVector Normal to the(100)plane

Projection of〔111〕on(100)plane

OF

IF(100)

α

OF

OF

IF

IF

(110)

(111)

(111)

(101) (100)

(101) (110)

〔011〕 〔011〕

〔011〕

〔001〕

〔010〕 〔001〕

〔010〕

〔011〕

Face of Element Ⅲ(Ga, In)

Face of Element Ⅴ (As, P)

(111)

(011)

(010) (001)

(110) (101)

α

OF

OF

IF

IF

(101)

(111)

(111)

(111)

(111)

(110)

(110) (101)

〔011〕 〔011〕

〔011〕

〔010〕

〔001〕 〔010〕

〔001〕

〔011〕

Face of Element Ⅴ(As, P)

Face of Element Ⅲ (Ga, In)

(111)

(011)

(001) (010)

(101) (110)

(100)

(100)

(100)

(111) Round Wafer (Mirror Face)

Round Wafer (Mirror Face)

θ°

Vector Normal to the Slice Surface

off-orientation slice

〔111〕Vector Normal to the(111)planeVector Normal to the(100)plane

Projection of〔111〕on(100)plane

OF

IF

(100)

θ°

(111)