Fe+O ion implantation, Younes Sina
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Transcript of Fe+O ion implantation, Younes Sina
Influence of oxygen ion implantation on the damage and annealing kinetics of iron –implanted sapphire
Carl J. McHarge, John D. Hunn, E. Alves, M.F. da Silva, J.C. Soares
Presentation by: Younes Sina, Uk huh
Fe+
O+Annealing
α-Al203 α-Al203
00010001
Al-Fe-O pseudo-binary section in air along the Fe2O3-Al2O3 join
Al2O3 and Fe2O3 are soluble in each other to 5-10% at 1100 ⁰C
(AlxFe1-x)2 O3
A solid solution in form of (AlxFe1-x)2 O3 may form during the oxygen implantation
FeAl204
Fe1-x0
α-Al203
Annealing for 120 hr @ 1500⁰C
O2
No residual polishing damageNo surface contamination
160 keV Fe+
54 keV O+
4x1016 Fe+/cm2 4x1016 O+/cm2
Annealing
1 hr @ 1500⁰C 800 1200 1500
Ar-4%H2
O2
Fe:O→1:1
Incident beam direction 5-7⁰ from crystal axes
α-Al203 α-Al203
00010001
4x1016 Fe+/cm2 6x1016 O+/cm2
Annealing
1 hr @ 1500⁰C 800 1200 1500
Ar-4%H2
O2
Fe:O→2:3
160 keV Fe+
54 keV O+
Incident beam direction 5-7⁰ from crystal axes
Residual damage(χ) by RBS-ion channelingOf 1.6 MeV He+
Temperature
Fe 4:4 4:6 Fe 4:4 4:6
500 0.9 0.89 0.88 0.9 0.89 0.89
800 0.2 0.19 0.26 0.53 0.19 0.22
1200 0.19 0.10 0.13 0.14 0.08 0.05
1500 0.05 - 0.05 - -
Oxidizing Reduction
Fraction damage remaining after annealing
10.58
0.6
0.62
0.64
0.66
0.68
0.7
0.680000000000001
0.62 0.62
Fe 4Fe:4O 4Fe:6O
Damage( χ)
Oxygen enhances dynamic recovery during implantation
Fe 4Fe:4O 4Fe:6O0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Total deposited damage energySD
4x1016 Fe+/cm2 4&6x1016 O+/cm2
160 keV Fe+
54 keV O+
disorder @1 > disorder@2
1 2
4:6
4:4Fe
O2
Recovery of disorder in Al- sublattice during post-implantation annealing
4:4
Fe
4:6
Recovery of disorder in Al- sublattice during post-implantation annealing
Ar-4%H2
significant slow rate
Iron spectra for 4Fe:4O annealed in air
O2
no shift in the position of the peak
5% iron was lost from the implanted zone
Iron spectra for 4Fe:4O annealed in Ar-4%H2
Ar-4%H2
no iron was lost from the implanted zone
no shift in the position of the peak
Some iron diffuses into and toward the surface of the sapphire during 1200⁰C annealing
Iron spectra for 4Fe:6O annealed in air
O2
no iron was lost from the implanted zone
no shift in the position of the peak
Iron spectra for 4Fe:6O annealed in Ar-4%H2
Ar-4%H2
no iron was lost from the implanted zone
no shift in the position of the peak
Crystal Damage
1500 Å
Fe
Annealing
Fe toward the surface
Reasons for reducing disorder:1. In situ compound formation2. Implanted oxygen replacing oxygen displaced by knock-ons
Oxygen implanted after the iron annihilates these vacancies causing the iron to precipitate
Fe2+ presents as iron –oxygen vacancy cluster
Thank you
Kurdistan, Iran