Fe+O ion implantation, Younes Sina

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Influence of oxygen ion implantation on the damage and annealing kinetics of iron –implanted sapphire Carl J. McHarge, John D. Hunn, E. Alves, M.F. da Silva, J.C. Soares Presentation by: Younes Sina, Uk huh

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Iron & Oxygen implantation into sapphire,A paper by my adviser (Dr. Carl j. McHargue et al) Presented by Younes Sina

Transcript of Fe+O ion implantation, Younes Sina

Page 1: Fe+O ion implantation, Younes Sina

Influence of oxygen ion implantation on the damage and annealing kinetics of iron –implanted sapphire

Carl J. McHarge, John D. Hunn, E. Alves, M.F. da Silva, J.C. Soares

Presentation by: Younes Sina, Uk huh

Page 2: Fe+O ion implantation, Younes Sina

Fe+

O+Annealing

α-Al203 α-Al203

00010001

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Al-Fe-O pseudo-binary section in air along the Fe2O3-Al2O3 join

Al2O3 and Fe2O3 are soluble in each other to 5-10% at 1100 ⁰C

(AlxFe1-x)2 O3

A solid solution in form of (AlxFe1-x)2 O3 may form during the oxygen implantation

FeAl204

Fe1-x0

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α-Al203

Annealing for 120 hr @ 1500⁰C

O2

No residual polishing damageNo surface contamination

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160 keV Fe+

54 keV O+

4x1016 Fe+/cm2 4x1016 O+/cm2

Annealing

1 hr @ 1500⁰C 800 1200 1500

Ar-4%H2

O2

Fe:O→1:1

Incident beam direction 5-7⁰ from crystal axes

α-Al203 α-Al203

00010001

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4x1016 Fe+/cm2 6x1016 O+/cm2

Annealing

1 hr @ 1500⁰C 800 1200 1500

Ar-4%H2

O2

Fe:O→2:3

160 keV Fe+

54 keV O+

Incident beam direction 5-7⁰ from crystal axes

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Residual damage(χ) by RBS-ion channelingOf 1.6 MeV He+

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Temperature

Fe 4:4 4:6 Fe 4:4 4:6

500 0.9 0.89 0.88 0.9 0.89 0.89

800 0.2 0.19 0.26 0.53 0.19 0.22

1200 0.19 0.10 0.13 0.14 0.08 0.05

1500 0.05 - 0.05 - -

Oxidizing Reduction

Fraction damage remaining after annealing

Page 9: Fe+O ion implantation, Younes Sina

10.58

0.6

0.62

0.64

0.66

0.68

0.7

0.680000000000001

0.62 0.62

Fe 4Fe:4O 4Fe:6O

Damage( χ)

Oxygen enhances dynamic recovery during implantation

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Fe 4Fe:4O 4Fe:6O0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

Total deposited damage energySD

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4x1016 Fe+/cm2 4&6x1016 O+/cm2

160 keV Fe+

54 keV O+

disorder @1 > disorder@2

1 2

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4:6

4:4Fe

O2

Recovery of disorder in Al- sublattice during post-implantation annealing

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4:4

Fe

4:6

Recovery of disorder in Al- sublattice during post-implantation annealing

Ar-4%H2

significant slow rate

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Iron spectra for 4Fe:4O annealed in air

O2

no shift in the position of the peak

5% iron was lost from the implanted zone

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Iron spectra for 4Fe:4O annealed in Ar-4%H2

Ar-4%H2

no iron was lost from the implanted zone

no shift in the position of the peak

Some iron diffuses into and toward the surface of the sapphire during 1200⁰C annealing

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Iron spectra for 4Fe:6O annealed in air

O2

no iron was lost from the implanted zone

no shift in the position of the peak

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Iron spectra for 4Fe:6O annealed in Ar-4%H2

Ar-4%H2

no iron was lost from the implanted zone

no shift in the position of the peak

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Crystal Damage

1500 Å

Fe

Annealing

Fe toward the surface

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Reasons for reducing disorder:1. In situ compound formation2. Implanted oxygen replacing oxygen displaced by knock-ons

Oxygen implanted after the iron annihilates these vacancies causing the iron to precipitate

Fe2+ presents as iron –oxygen vacancy cluster

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Thank you

Kurdistan, Iran