Department of Electronics

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Department of Electronics Advanced Information Storage 13 Atsufumi Hirohata 16:00 14/November/2013 Thursday (V 120)

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Advanced Information Storage 13. Atsufumi Hirohata. Department of Electronics. 16:00 14/November/2013 Thursday (V 120). Quick Review over the Last Lecture. Read-out operation of 1C1T :. DRAM :. Data stored in a capacitor. “1”-data :. 1 V + ΔV = 2 V. - PowerPoint PPT Presentation

Transcript of Department of Electronics

Page 1: Department of Electronics

Department of Electronics

Advanced Information Storage

13

Atsufumi Hirohata

16:00 14/November/2013 Thursday (V 120)

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Quick Review over the Last Lecture

DRAM :

Data stored in a capacitor.

Electric charge needs to be refreshed.

DRAM requires large power consumption.

Read-out operation of 1C1T :

1 V + ΔV = 2 V

2 V = 1 V + ΔV

3.6 V

ON

“1”-data :

1 V – ΔV = 0 V

0 V = 1 V – ΔV

3.6 V

ON

“0”-data :

* http://www.wikipedia.org/;* http://users.cis.fiu.edu/~prabakar/cda4101/Common/notes/lecture09.html

Refresh operation of 1C1T :

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13 Static Random Access Memory

• Volatile memory developmement

• 6T-SRAM architecture

• Read / write operation

• 1T-SRAM

• Various ROMs

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Memory Types

* http://www.semiconductorjapan.net/serial/lesson/12.html

Rewritable

Read only

Read majority

(Writable)

Volatile

Non-volatile

Non-volatile

Non-volatile

Dynamic

Static

Static

Static

Static

DRAM

SRAM

MRAM

FeRAM

PRAM

PROM

Mask ROM

Flash

EPROM

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Manchester Automatic Digital Machine

In 1949, Frederic C. Williams and Tom Kilburn developed Manchester Mark 1 :

* http://www.computer50.org/mark1/;** http://www.wikipedia.org/

One of the earliest

stored-programme computers

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Williams-Kilburn Tube

Cathode-ray tube to store data :

* http://www.wikipedia.org/

Utilise a minor change of electron charges

at a fluorescent screen when an electron

hit it.

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Delay Line Memory

In 1947, John P. Eckart invented a mercury delay line memory :

* http://www.wikipedia.org/

Utilise an ultrasonic wave

generated by a transducer

to store a data.

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Selectron Tube

In 1953, Jan A. Rajchman (RCA) invented a selectron tube :

* http://www.ieeeghn.org/wiki/index.php/Jan_Rajchman;** http://www.wikipedia.org/

An array of cathode-ray tubes is used to store data electrostatically.

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Static Random Access Memory (SRAM)

* http://www.wikipedia.org/

Static random access memory (SRAM) :

No need to dynamically refresh data.

Even so, the data is lost once the power is off.

Flip flop is used to store data.

Low power consumption

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6T-SRAM Read Operation

A standard SRAM cell :

* http://allthingsvlsi.wordpress.com/tag/6t-sram-operation/

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6T-SRAM Write Operation

Write operation :

* http://allthingsvlsi.wordpress.com/tag/6t-sram-operation/

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1T-SRAM

Pseudo SRAM developed by MoSys :

* http://www.wikipedia.org/;

< 1/3 area

< 1/2 power consumption

Easy to be embeded

Simple interface

Similar to SRAM performance

Lower latency as compared with DRAM

High fidelity (< 1 FIT / Mbit, FIT : failure in time of 10 9 hours)

By comparing with the conventional 6T-SRAM,

** http://www.mosys.com/high-density-memory.php

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Advantages of 1T-SRAM

Comparison between 1T-SRAM, embedded SRAM (eSRAM) and 6T-SRAM :

* http://media.corporate-ir.net/media_files/nsd/mosy/presentations/corp_pres_1103/sld012.htm

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Mask ROM

Read-only memory made by a photo-mask :

* http://www.smspower.org/Development/MaskROMs

Cheap

Simple structure

Ideal for integration

×Initial mask fabrication cost

×Lead time for mask fabrication

×No design change without mask replacement

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Programmable ROM (PROM)

PROM bipolar cell :

* http://www.electronics.dit.ie/staff/tscarff/memory/rom.htm

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PROM Architecture

PROM architecture :

* http://www.electronics.dit.ie/staff/tscarff/memory/rom.htm

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Erasable PROM

UV-light can erase stored data :

* http://www.electronics.dit.ie/staff/tscarff/memory/rom.htm* http://www.wikipedia.org/;

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Electrically EPROM (EEPROM)

In 1978, George Perlegos (Intel) developed electrical erasing mechanism :

* http://www.answers.com/topic/eeprom

Similar to flash memory

Individual bits are erasable.

Rewritable by simply writing a new data

Rewritability > 100k times

×Small capacity (~ a few 10 bytes)

×More complicated architecture as compared with flash memory

×Higher cost for fabrication as compared with flash memory

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EEPROM Usages

EEPROM is used in various applications :

* http://www.sanyosemi.com/en/memory/topics/serial-eeprom.php

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Connections between the Components

Connections between CPU, in/outputs and storages :

* http://testbench.in/introduction_to_pci_express.html;