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Advanced Information Storage 13. Atsufumi Hirohata. Department of Electronics. 16:00 14/November/2013 Thursday (V 120). Quick Review over the Last Lecture. Read-out operation of 1C1T :. DRAM :. Data stored in a capacitor. “1”-data :. 1 V + ΔV = 2 V. - PowerPoint PPT Presentation

Transcript of Department of Electronics

  • Department of ElectronicsAdvanced Information Storage13Atsufumi Hirohata16:00 14/November/2013 Thursday (V 120)

  • Quick Review over the Last LectureDRAM :Data stored in a capacitor. Electric charge needs to be refreshed. DRAM requires large power consumption.Read-out operation of 1C1T :1 V + V = 2 V2 V = 1 V + V3.6 VON1-data :1 V V = 0 V0 V = 1 V V3.6 VON0-data :*;

    * operation of 1C1T :

  • 13 Static Random Access MemoryVolatile memory developmement6T-SRAM architectureRead / write operation1T-SRAMVarious ROMs

  • Memory Types* onlyRead majority(Writable)VolatileNon-volatileNon-volatileNon-volatileDynamicStaticStaticStaticStaticDRAMSRAMMRAMFeRAMPRAMPROMMask ROMFlashEPROM

  • Manchester Automatic Digital MachineIn 1949, Frederic C. Williams and Tom Kilburn developed Manchester Mark 1 :*;** of the earliest stored-programme computers

  • Williams-Kilburn TubeCathode-ray tube to store data :* a minor change of electron charges at a fluorescent screen when an electron hit it.

  • Delay Line MemoryIn 1947, John P. Eckart invented a mercury delay line memory :* an ultrasonic wave generated by a transducer to store a data.

  • Selectron TubeIn 1953, Jan A. Rajchman (RCA) invented a selectron tube :*;** array of cathode-ray tubes is used to store data electrostatically.

  • Static Random Access Memory (SRAM)* random access memory (SRAM) :No need to dynamically refresh data. Even so, the data is lost once the power is off.Flip flop is used to store data. Low power consumption

  • 6T-SRAM Read OperationA standard SRAM cell :*

  • 6T-SRAM Write OperationWrite operation :*

  • 1T-SRAMPseudo SRAM developed by MoSys :*; < 1/3 area< 1/2 power consumptionEasy to be embededSimple interfaceSimilar to SRAM performanceLower latency as compared with DRAMHigh fidelity (< 1 FIT / Mbit, FIT : failure in time of 10 9 hours)By comparing with the conventional 6T-SRAM,**

  • Advantages of 1T-SRAMComparison between 1T-SRAM, embedded SRAM (eSRAM) and 6T-SRAM :*

  • Mask ROMRead-only memory made by a photo-mask :* structureIdeal for integrationInitial mask fabrication costLead time for mask fabricationNo design change without mask replacement

  • Programmable ROM (PROM)PROM bipolar cell :*

  • PROM ArchitecturePROM architecture :*

  • Erasable PROMUV-light can erase stored data :**;

  • Electrically EPROM (EEPROM)In 1978, George Perlegos (Intel) developed electrical erasing mechanism :* to flash memoryIndividual bits are erasable.Rewritable by simply writing a new dataRewritability > 100k timesSmall capacity (~ a few 10 bytes)More complicated architecture as compared with flash memoryHigher cost for fabrication as compared with flash memory

  • EEPROM UsagesEEPROM is used in various applications :*

  • Connections between the ComponentsConnections between CPU, in/outputs and storages :*;