1 23

TO-220

TAB

AM01475v1_noZen

D(2, TAB)

G(1)

S(3)

FeaturesOrder code VDS RDS(on) max. ID

IRF630 200 V 0.40 Ω 9 A

• Extremely high dv/dt capability• Very low intrinsic capacitance• Gate charge minimized

Applications• Switching applications

DescriptionThis Power MOSFET series realized with STMicroelectronics unique STripFET™process has specifically been designed to minimize input capacitance and gatecharge. It is therefore suitable as primary switch in advanced high-efficiency isolatedDC-DC converters.

Product status link

IRF630

Product summary

Order code IRF630

Marking IRF630

Package TO-220

Packing Tube

N-channel 200 V, 0.29 Ω typ., 9 A, STripFET™ Power MOSFET in a TO‑220 package

IRF630

Datasheet

DS0668 - Rev 10 - December 2018For further information contact your local STMicroelectronics sales office.

www.st.com

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VDDS Drain-source voltage (VGS = 0 V) 200 V

VDGR Drain-gate voltage (RGS = 20 kΩ) 200 V

VGS Gate-source voltage ±20 V

IDDrain current (continuous) at TC = 25 °C 9 A

Drain current (continuous) at TC = 100 °C 6.5 A

IDM(1) Drain current (pulsed) 36 A

PTOT Total power dissipation at TC = 25 °C 120 W

EAS(2) Single pulse avalanche energy 110 mJ

dv/dt(3) Drain-body diode dynamic dv/dt ruggedness 5.8 V/ns

Tstg Storage temperature range-65 to 175 °C

TJ Operating junction temperature range

1. Pulse width is limited by safe operating area.2. Starting TJ = 25 °C, ID = 4.5 A

3. ISD = 9 A, di/dt = 520 A/μs, VDD = 50 V, TJ < TJmax

Table 2. Thermal data

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case 1.26 °C/W

Rthj-amb Thermal resistance junction-ambient 62.5 °C/W

IRF630Electrical ratings

DS0668 - Rev 10 page 2/13

2 Electrical characteristics

TCASE = 25 °C unless otherwise specified

Table 3. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 250 μA 200 V

IDSS Zero gate voltage drain current

VGS = 0 V, VDS = 200 V 1 µA

VGS = 0 V, VDS = 200 V,

TC = 125 °C(1)100 µA

IGSS Gate body leakage current VDS = 0 V, VGS = 20 V ±100 nA

VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V

RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 4.5 A 0.29 0.40 Ω

1. Defined by design, not subject to production test.

Table 4. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss Input capacitanceVDS = 25 V, f = 1 MHz,

VGS = 0 V

- 370 - pF

Coss Output capacitance - 77 - pF

Crss Reverse transfer capacitance - 14 - pF

Qg Total gate charge VDD = 160 V, ID = 9 A

VGS = 0 to 10 V

(see Figure 13. Test circuit for gatecharge behavior)

- 11.6 - nC

Qgs Gate-source charge - 2.2 - nC

Qgd Gate-drain charge - 5.5 - nC

Table 5. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time VDD = 100 V, ID = 4.5 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 12. Test circuit forresistive load switching times andFigure 17. Switching timewaveform)

- 5.6 - ns

tr Rise time - 2.6 - ns

IRF630Electrical characteristics

DS0668 - Rev 10 page 3/13

Table 6. Source-drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

VSD(1) Forward on voltage ISD = 9 A, VGS = 0 V - 1.5 V

trr Reverse recovery time ISD = 9 A, di/dt = 100 A/µs,

VDD = 50 V

(see Figure 17. Switching timewaveform)

- 118.5 ns

Qrr Reverse recovery charge - 393 nC

IRRM Reverse recovery current - 6.6 A

1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

IRF630Electrical characteristics

DS0668 - Rev 10 page 4/13

2.1 Electrical characteristics (curves)

Figure 1. Safe operating areaGADG221120181106SOA

101

100

10-1

10-2

10-1 100 101 102

ID (A)

VDS (V)

tp =10 µs

tp =100 µs

tp =1 ms

tp =10 ms

Operation in this areais limited by RDS(on)

TC = 25 °C,TJ ≤ 175 °C,single pulse

Figure 2. Thermal impedance

GADG221120181106ZTH

10 -1

10 -2

10 -3

10 -6 10 -5 10 -4 10 -3 10 -2 10 -1

K

tp (s)

δ = 0.5

δ = 0.1

δ = 0.05

δ = 0.02δ = 0.01

Single pulse

δ = 0.2

Figure 3. Output characteristics

GADG221120181107OCH

20

16

12

8

4

00 5 10 15 20

ID (A)

VDS (V)

VGS = 8, 9, 10 V

VGS = 7 V

VGS = 6 V

VGS = 5 V

VGS = 4 V

Figure 4. Transfer characteristics

GADG221120181221TCH

7

6

5

4

3

2

1

00 1 2 3 4 5

ID (A)

VGS (V)

VDS = 10 V

TJ = 25 °C

TJ = 150 °CTJ = -55 °C

Figure 5. Gate charge vs gate-source voltage

GADG221120181107QVG

12

10

8

6

4

2

00 2 4 6 8 10 12

VGS (V)

Qg (nC)

VDS = 160 V, ID = 9 A

Figure 6. Static drain-source on-resistance

GADG221120181108RID

325

300

275

2500 1 2 3 4 5 6 7 8 9

RDS(on) (mΩ)

ID (A)

VGS = 10 V

IRF630Electrical characteristics (curves)

DS0668 - Rev 10 page 5/13

Figure 7. Capacitance variations

GADG221120181107CVR

10 3

10 2

10 1

10 0 0 50 100 150

C (pF)

VDS (V)

CISS

COSS

CRSS

Figure 8. Normalized gate threshold voltage vstemperature

GADG221120181109VTH

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4-75 -25 25 75 125 175

VGS(th) (norm.)

Tj (°C)

ID = 250 µA

Figure 9. Normalized on-resistance vs temperature

GADG221120181109RON

2.6

2.2

1.8

1.4

1.0

0.6

0.2-75 -25 25 75 125 175

RDS(on) (norm.)

Tj (°C)

VGS = 10 V, ID = 4.5 A

Figure 10. Normalized V(BR)DSS vs temperature

GADG221120181109BDV

1.121.101.081.061.041.021.000.980.960.940.920.900.88

-75 -25 25 75 125 175

V(BR)DSS (norm.)

Tj (°C)

ID = 1 mA

Figure 11. Source-drain diode forward characteristics

GADG221120181110SDF

0.9

0.8

0.7

0.6

0.5

0.40 2 4 6 8

VSD (V)

ISD (A)

TJ = 175 °C

TJ = 25 °C

TJ = -55 °C

IRF630Electrical characteristics (curves)

DS0668 - Rev 10 page 6/13

3 Test circuits

Figure 12. Test circuit for resistive load switching times

AM01468v1

VD

RG

RL

D.U.T.

2200μF VDD

3.3μF+

pulse width

VGS

Figure 13. Test circuit for gate charge behavior

AM01469v1

47 kΩ1 kΩ

47 kΩ

2.7 kΩ

1 kΩ

12 V

IG= CONST100 Ω

100 nF

D.U.T.

+pulse width

VGS

2200μF

VG

VDD

Figure 14. Test circuit for inductive load switching anddiode recovery times

AM01470v1

AD

D.U.T.S

B

G

25 Ω

A A

B B

RG

GD

S

100 µH

µF3.3 1000

µF VDD

D.U.T.

+

_

+

fastdiode

Figure 15. Unclamped inductive load test circuit

AM01471v1

VD

ID

D.U.T.

L

VDD+

pulse width

Vi

3.3µF

2200µF

Figure 16. Unclamped inductive waveform

AM01472v1

V(BR)DSS

VDDVDD

VD

IDM

ID

Figure 17. Switching time waveform

AM01473v1

0

VGS 90%

VDS

90%

10%

90%

10%

10%

ton

td(on) tr

0

toff

td(off) tf

IRF630Test circuits

DS0668 - Rev 10 page 7/13

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®

packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitionsand product status are available at: www.st.com. ECOPACK® is an ST trademark.

IRF630Package information

DS0668 - Rev 10 page 8/13

4.1 TO-220 type A package information

Figure 18. TO-220 type A package outline

0015988_typeA_Rev_22

IRF630TO-220 type A package information

DS0668 - Rev 10 page 9/13

Table 7. TO-220 type A package mechanical data

Dim.mm

Min. Typ. Max.

A 4.40 4.60

b 0.61 0.88

b1 1.14 1.55

c 0.48 0.70

D 15.25 15.75

D1 1.27

E 10.00 10.40

e 2.40 2.70

e1 4.95 5.15

F 1.23 1.32

H1 6.20 6.60

J1 2.40 2.72

L 13.00 14.00

L1 3.50 3.93

L20 16.40

L30 28.90

øP 3.75 3.85

Q 2.65 2.95

IRF630TO-220 type A package information

DS0668 - Rev 10 page 10/13

Revision history

Table 8. Document revision history

Date Version Changes

09-Sep-2004 8 Complete version

03-Aug-2006 9 New template, no content change

12-Dec-2018 10Part number IRF630FP has been moved to a separate datasheet and thedocument has been updated accordingly.

Minor text changes

IRF630

DS0668 - Rev 10 page 11/13

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7

4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8

4.1 TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

IRF630Contents

DS0668 - Rev 10 page 12/13

IMPORTANT NOTICE – PLEASE READ CAREFULLY

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Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design ofPurchasers’ products.

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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.

© 2018 STMicroelectronics – All rights reserved

IRF630

DS0668 - Rev 10 page 13/13