Characterization of Void Growth in High Temperature Fatigued Copper through USANS

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Characterization of Void Growth in High Temperature Fatigued Copper through USANS Guangjun Cheng Stephen Fenimore Rohan Hule Jinkee Lee Christopher Metting Maria Torija

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Characterization of Void Growth in High Temperature Fatigued Copper through USANS. Guangjun Cheng Stephen Fenimore Rohan Hule Jinkee Lee Christopher Metting Maria Torija. Outline. USANS Problem background Experimental design Analysis Results Conclusions. Low q range - PowerPoint PPT Presentation

Transcript of Characterization of Void Growth in High Temperature Fatigued Copper through USANS

Page 1: Characterization of Void Growth in High Temperature Fatigued Copper through USANS

Characterization of Void Growth in High Temperature Fatigued

Copper through USANS

Guangjun Cheng Stephen Fenimore

Rohan Hule Jinkee Lee

Christopher MettingMaria Torija

Page 2: Characterization of Void Growth in High Temperature Fatigued Copper through USANS

Outline

• USANS• Problem background• Experimental design• Analysis• Results• Conclusions

Page 3: Characterization of Void Growth in High Temperature Fatigued Copper through USANS

USANS Capabilities

Graphite Filter

Sapphire Filter

Premonochromator

Monochromator

Monitor

Sample Changer

Main Detector

Analyzer

Transmission

Detector Isolation Table

Apertures

Scale: 1 m PCD Simplified Layout3.CV5

• Low q range– 3x10-5 Å-1 < q < 0.01 Å-1

• Particle Diameter: 0.1 μ m < D < 10 μm

Page 4: Characterization of Void Growth in High Temperature Fatigued Copper through USANS

Problem Background

• Fatigue causes voids in copper lattice

• Voids grow nucleate at grain boundaries

• Lead to mechanical failure

• Relationship between stress and void growth

Stress Axis

fatigue_cavity.CV5

Void

Grain Boundary (Diamond Configuration)

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Experimental Design

• Fatigue conditions– 405 oC– 17 cycles/second– Max stress amplitude: 34 MPa

• Monitor void growth by varying the number of fatigue cycles– 25,000; 50,000; 100,000 cycles

• USANS to examine growth shape and size

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Reduced Slit Smeared USANS DataSlope= -1 (plate)

Slope= -3 (Porod)

Page 7: Characterization of Void Growth in High Temperature Fatigued Copper through USANS

Porod Scattering, 100,000 cycles

0 100

1 10 -7

2 10 -7

3 10 -7

4 10 -7

5 10 -7

6 10 -7

7 10 -7

8 10 -7

0 100 5 10 -4 1 10 -3 1.5 10 -3 2 10 -3 2.5 10 -3

q•d

s/d

(q)

Å-1

cm-1

q (Å-1 )

blue_Porod.gra

3

Intercept ~surface area/sample volume-3

Page 8: Characterization of Void Growth in High Temperature Fatigued Copper through USANS

Invariant

0

0.5

1

1.5

2

2.5

3

3.5

4

0 100 5 10-4 1 10-3 1.5 10-3 2 10-3 2.5 10-3

q•d

/d

(q)

Å-1

cm-1

q (Å-1 )

blue_invariant.gra

Area under curve ~ Volume Fraction

Page 9: Characterization of Void Growth in High Temperature Fatigued Copper through USANS

Modified Guinier (plate)

-2.5

-2

-1.5

-1

-0.5

0

0.5

1

1.5

0 100 5 10 -7 1 10 -6 1.5 10 -6 2 10 -6 2.5 10 -6 3 10 -6 3.5 10 -6 4 10 -6

ln(q

•d

s/d

(q))

Å-1

cm-1

q2 (Å-2 )

blue_mGuinier.gra

m= -T2/12

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Results

Number of Cycles

  25,000 50,000 100,000

Surface area/Sample volume (cm2/cm3) 160 240

Volume fraction 5.80E-04 1.70E-03 2.90E-03

Average diameter (m) 0.60 0.72

Average volume (m3) 0.11 0.20

Number of voids/sample volume (cm-3) 1.50E+10 1.40E+10

Plate thickness (m) 0.36 0.55 0.63

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Comparison with prior workScripta Met. 24 (1990) 227-232

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Conclusions

• USANS proved to be a powerful tool for this investigation

• Average volume increases with cycle number

• Number of nucleation sites is independent of the number of cycles

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HURRAY for USANS!

Thanks to John Barker, Man-Ho Kim, and David Mildner

Questions?

Page 14: Characterization of Void Growth in High Temperature Fatigued Copper through USANS

duuqdd

qq

dd

qq

dqddTsQI

Vq

V

S

HVA

SAcor

)(1)(

)2)(2(

)/)(()(

22

0

Data reduction for USANS:Smearing corection

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Scattering for non-interacting particles

2

3

22

)()cos(sin31),(

)(/)(

qRqRqRqRdr

VRqP

qPNVdqd

pV

riq

P

PPS

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Particle Volume fraction- Invariant

3

62

00

2

34)0(

)(1)(

R

R

dd

dqqddq

qdqq

ddqQ S

q

VI

V

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Interfacial Surface Area

424 /2/)(lim qSqCqdd

Pq