Characterization of Ti-based surfaces with X-ray ... Workshop Slovenia/BioTiNet_Kovac.pdf · X-Ray...
Transcript of Characterization of Ti-based surfaces with X-ray ... Workshop Slovenia/BioTiNet_Kovac.pdf · X-Ray...
Characterization
of
Ti-based surfaces
with
X-ray
photoelectron
spectroscopy
Janez KovačJožef Stefan InstituteLjubljana, Slovenia
E-mail: [email protected]
Outlook•
X-Ray
photoelectron
spectroscopy
–
Principles–
Surface
sensitivity
–
Quantification–
Chemical
shift
–
Instrumentation–
Depth
profiling
•
Applications
of
XPS and
AES–
Ti valence states
on Ti-O ceramics
–
TiO2 anatase
layer/Ti6Al4V alloy–
Rejected
Ti implant
from
a patient
X-Ray Photoelectron Spectroscopy- XPS
•
Irradiation of solid surface with monohromatic
X-ray photons (E~1000 eV, λ∼1 nm) and energy analysis of emitted photoelectrons
•
High surface sensitivity
•
Information on:–
Composition
–
Chemical state of elements
X-raysemittedelectrons
XPS – Photoelectron process
EFermi
Valelence
band
X-ray
photon, hν
Emitted
electron, EK
EVAKUUM
1 s
2 s
2 p
Energy
levels
in carbon Bind
ing
ener
gy(e
V)
XPS spectrum•XPS peaks: 1s, 2s, 2p...
•Spin-orbit splitting: 2p3/2
,2p1/2
•Valence band
•Auger
peaks
•Background
due
to inelasic
scattering
XPS survey
spectrum
of
InP
Binding
Energy
(eV)
Kinetic
Energy
(eV)
020040060080010001200
Binding Energy (eV)
Inte
nsity
(a.u
.)
InP(100)
Concentrations:In...31.6 at.%C...29.0 at.%O...27.0 at.%P...12.4 at.%
In 3p
In 3d
O 1s
C 1sP 2s P 2p
In 4dO KLLIn 3s
Surfacecontamination
Surface sensitivity
Inelastic
mean
free
path
–
IMFP: λ
~ 0.3 -
4
nm
95% of the measured peak intensity comes from a sampling depth of 3λi cosθ
(θ=angle of emission)
Quantificationλσ ⋅⋅⋅⋅= KcjI
j -
x-ray flux
c -
concentration of element
σ -
cross-section for photoelectron excitation
K -
instrumental factors
λ - electron inelastic mean free path
∑=
j j
j
i
i
i
SIS
I
cSi
: Relative
sensitivity
factorCi
: concentration
in at.%
• Sensitivity of XPS ~ 0.1 at.%• Possible to detect all elements except H and He
Chemical shift in XPSElectrons at inner orbitales (core
levels) feel different potential due to different chemical bonds of atom by valence electrons
⇒
change in binding energy = chemical shift (up to few eV)
⇒
Model: ΔE=
k
Δq + ΔV
(charge potential model)
⇒
information about:1.
Valence states
2.
Chemical environment
450455460465470475Binding Energy (eV)
Inte
nsity
(a.u
.)
Ti 2p Ti 2p3/2
Ti 2p1/2
Ti (4+)TiO2
450455460465470475Binding Energy (eV)
Inte
nsity
(a.u
.)
Ti 2p Ti 2p3/2
Ti 2p1/2
Ti (4+)
Ti (3+)
Ti (2+)
Ti-suboxides
Chemical shift in XPS: a tool
to recognize
chemical
compounds
UHV ambient•
Why a need for UHV?–
10-8
to 10-10
mbar
•
Surface contaminationat 10-6
mbar, a monolayer of gas is adsorbed onto solid surface in about one second
•
Scattering of photoelectrons
XPS spectrometer
Complex, ultra high vacuum instrument:
•
X-ray sources, •
electron
energy
analyser,
•
ion gun, •
neutralizer,
•
sample manipulator•
p ~ 10-10
mbar
X-ray sources for XPS•
X-ray tubes (laboratory):–
Mg anode, E=1253.6 eV, FWHM=0.70 eV
–
Al anode, E=1486.6 eV, FWHM=0.85 eV
Quartz monochromator
(FWHM ~ 0.25 eV)
•
Synchrotron radiationtunable
energy, high flux, high monochromaticy, very
small
spot X-ray
beam
(<100 nm)(Synchrotron
Elettra
at Trieste
(IT)
ApplicationsStudies of phenomena at surfaces and interfaces:
•
oxidation, •
adhesion,
•
adsorption, •
contamination,
•
segregation, •
diffusion,
•
surface
functionalization•
reactions
at internal
interfaces
•
thin
films•
…
Effect
of the valence state of titanium ions on hydrophilicity
of
ceramics in Ti-O
system
•
TiO2
: photocatalytic
and
superhydrophilic
effects
•
To study
effect
of
valence states
of
Ti-atoms
on WCA
•
TiO2
ceramic was prepared from TiO2
powder sintered in air, •
reduced TiO2-x
ceramic from TiO2-x
powder sintered in Ar/H2•
Ti2
O3
ceramic from mechano-
chemically activated Ti2
O3
powder sintered in Ar/H2
.
•
All powders were sintered at 1400 oC
for 2 hoursSEM image of TiO2−x powder and (b) X-ray powder-diffraction
pattern of TiO2−x powder.
D. Kuščer et
al., Journal of the European Ceramic Society 28 (2008) 577–584
02004006008001000Binding Energy (eV)
Inte
nsiti
es (a
.u.) O KLL
O 1s
Ti 2p
C 1s
Ca 2p
Mg KLL
Ti 3p
Si 2p
Ba 3d
Ti LMM
TiO2
TiO2-x
Ti2O3
Effect
of the valence state of titanium ions on hydrophilicity
of
ceramics in Ti-O
system
D. Kuščer et
al., Journal of the European Ceramic Society 28 (2008) 577–584
455460465470475
Binding Energy (eV)
Nor
mal
ized
Inte
nsiti
es(a
.u.) Ti 2p Ti4+
Ti3+
TiO2
TiO2-x
Ti2
O3Ti3+/Ti total
9 %
14 %
0 %
D. Kuščer et
al., Journal of the European Ceramic Society 28 (2008) 577–584
Effect
of the valence state of titanium ions on hydrophilicity
of
ceramics in Ti-O
system
Effect
of the valence state of titanium ions on hydrophilicity
of
ceramics in Ti-O
system
454456458460462464466468470
0
500
1000
1500
2000
2500
3000
Ti 2p spekter, vz. 2, TiO2-x
Vezavna energija (eV)
Sign
al (i
mpu
lzi/s
)
3+ 3+
4+
4+
D. Kuščer et
al., Journal of the European Ceramic Society 28 (2008) 577–584
-
The
presence
of
Ti(3+) at surface
is related
to a significant
decrease
in water-contact
angle.
-
Wettability
of
ceramics
in the
TiO
system
can
be
improved
by
introducing Ti(3+) at the
ceramic
interface.
TiO2-xTi 2p
18
26
67
0
10
20
30
40
50
60
70
80
Ti2O3 TiO2-x TiO2
Wat
er c
onta
ct a
ngle
(deg
ree)
Surface subsurface
•
Very
often
information
from
subsurface region
needed.
•
Depth
profiling: –
Angle
resolved
XPS: depth
up to 10 nm
–
Ion sputtering: depth
up to 500 nm
Ion sputter depth profiling
OVERLAYER
SUBSTRAT
EL. OR X-RAY BEAM
Schematic representation of the beginning of the AES/XPS depth
profiling analysis.
ION BEAM
XPS depth
profiling
with
high
depth resolution
Cr-oxide Cr-oxideCr-metalCr-metal
Ni Cr
O
Cr
Ni Cr
Si
XPS depth
profile ofNi(30 nm)/Cr(30 nm)/Cr2O3(30 nm)/Ni(30 nm)/Cr(30 nm)/Si structure
depth
Ion sputter depth profiling•
Techniques:–
XPS or Auger
electron
spectroscopy
–
AES
•
Information:–
Depth
distribution
of
elements
in layer
of
thickness
of
about
100 -
500 nm
•
Requirements
for–
Good
depth
resolution, sample
rotation
(invented
by
prof. Zalar
in 1985 in our
laboratoy)
•
Drawback: destructive
method, reduction
of
Ti valence states
•
Alternative techniques–
TEM, RBS, FE-SEM, GDOES, SIMS
Hydrothermal
synthesis
of
anatase layer
on Ti6Al4V implants
-
V
has been reported to be cytotoxic-
Al has been suggested to be neurotoxic
N. Drnovšek et
al., Surface & Coatings Technology 203 (2009) 1462–1468
TiO2
layer present at the surface:• it
has some bioactive properties
• to prevent diffusion of toxic metal
ions into the
body
Non
treated After
24h at pH=8, 150 oC, with
TiO2
addition
Hydrothermal
synthesis
of
anatase
layer
on Ti6Al4V implants
SEM images of HT treated Ti6Al4V specimens with TiO2
addition. (a) pH=8 (natural). The surfaces of the substrate are covered with a thick layer of large anatase
crystals.
(b) pH=11. The size of anatase
crystals is reduced.
Sample
preparation:
at different pH values with or without the addition of TiO2
(anatase
powder) or Ti(OH)4
in water
suspension
or NaOH
or NH4
NO3
solution
Result: different
morphologies of anatase
crystals and different thickness of the oxide layer
450455460465470475Binding Energy (eV)
Inte
nsity
(a.u
.)
Ti 2p
Ti 2p1/2
Ti 2p3/2
E=458.8 eV(TiO2
)
XPS spectrum of Ti 2p obtained on the surface of the sample treated by HT in the NaOH
soultion
N. Drnovšek et
al., Surface & Coatings Technology 203 (2009) 1462–1468
0100200300400500600700800Binding Energy (eV)
Inte
nsity
(a.u
.)
C 1s
Ti 3p
Ti 3s
N 1s
O 1s
Ti 2pTi 2s
V 2p
Al 2p
Ar 2p
Surface
At depth~ 750 nm
XPS spectra
obtained on the surface and
at depth
of
750 nm
of the sample treated by HT in the NaOH
soultion
Difference
in presence
of
metals: V and
Al not detected
at surface
N. Drnovšek et
al., Surface & Coatings Technology 203 (2009) 1462–1468
Depth
profiles
of
TiO2
/Ti6Al4V
0
10
20
30
40
50
60
70
80
90
100
0 10 20 30 40 50 60 70 80 90
Sputtering Time (min)
Con
cent
ratio
n (a
t.%)
C (at.%) O (at.%) Al (at.%) Ti (at.%) V (at.%)
O
Ti
CV
0
10
20
30
40
50
60
70
80
90
100
0 10 20 30 40 50 60 70 80 90
Sputtering Time (min)
Con
cent
ratio
n (a
t.%)
C (at.%) O (at.%) Al (at.%) Ti (at.%) V (at.%)
O
Ti
C
V0
10
20
30
40
50
60
70
80
90
100
0 10 20 30 40 50 60 70 80 90 100
Sputtering Time (min)
Con
cent
ratio
n (a
t.%)
C1s O1s Al2p Ti2p V2p
O
Ti
AlCV
0
10
20
30
40
50
60
70
80
90
100
0 10 20 30 40
Sputtering Time (min)
Con
cent
ratio
n (a
t.%)
C (at.%) O (at.%) Al (at.%) Ti (at.%) V (at.%)
O
Ti
AlC
V
- Thick layer of TiO2 after treatment of Ti6Al4V in TiO2 suspension
- No Al found in TiO2 layer
- Low amount of V incorporated in the anatase structure
Non-treated HT-treated
in Ti(OH)4
suspention
HT-treated
in TiO2
suspention HT-treated
in NH4
NO3
solution
OSSEOINTEGRATION AND REJECTION OF A TITANIUM SCREW
Grega
Klančnik
et
al., Materiali
in tehnologije
/ Materials and technology 44 (2010) 5, 261–264
Titanium screw –
rejected implant
0
5
10
15
20
25
30
35
40
0 50 100 150 200 250 300 350 400Depth (nm)
Con
cent
ratio
n (a
t.%)
P C Ca N Ti O Fe Mg Al Si
O
C
Ti
N
Si
Al
CaMg
Fe
Ti
P
Orthopaedic
screw
removed from
patient
due
to irritation
Screw
was
for
one year
in metacarpal
bone
Surface of screw was nitrided (TiN)
Formation of hydroxyapetite (Ca, P, O)
Si and Al (to reduce friction)
OSSEOINTEGRATION AND REJECTION OF A TITANIUM SCREW
Titanium screw –
rejected implant
0
1
2
3
4
5
0 50 100 150 200 250 300 350 400Depth (nm)
Con
cent
ratio
n (a
t.%)
P C Ca N Ti O Fe Mg
P
Ca
Mg
Fe
Grega
Klančnik
et
al., Materiali
in tehnologije
/ Materials and technology 44 (2010) 5, 261–264
Orthopaedic
screw
removed from
patient
due
to irritation
Screw
was
for
one year
in metacarpal
bone
OSSEOINTEGRATION AND REJECTION OF A TITANIUM SCREW
Titanium screw –
rejected implant
•
Surface contamination:–
Fe (iron containing steel tool)
–
Si and Al (to reduce friction)
•
Accumulation of Fe and Al can cause inflammation, irritation and rejection of Ti-
screw
Grega
Klančnik
et
al., Materiali
in tehnologije
/ Materials and technology 44 (2010) 5, 261–264
Orthopaedic
screw removed from patient
due to irritation
Screw was for one year in metacarpal bone
Conclusions
•
XPS is suitable technique for characterization of surface chemistry on model and realistic samples yielding information on surface composition and chemical state of elements.
•
In combiantion
with ion sputtering XPS and
AES techniques
can provide information of
distribution of elements in subsurface region
Characterization
of
Ti-based surfaces
with
X-ray
photoelectron
spectroscopy
Janez KovačJožef Stefan InstituteLjubljana, Slovenia
E-mail: [email protected]