Chapter 12
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Transcript of Chapter 12
Chapter 12
Additional Analytical Methods
Analytical MethodsTechnique
TypeTechnique application
SubdivisionsSpecific
applicationDescription Destruction
Light microscopyGeneral surveys
Features larger than 1μm
TransmittedTransparent
mineralsPetrographic microscope –
light from below sampleNon
Reflected Opaque minerals (ore minerals)
Petrographic microscope – light from above sample
Non
DiffractionFurther identification,
lattice parameters and crystal structure
X-RayPowders of single
minerals or mixtures (heavy atom
position)
X-Ray beam scattered at differing intensities at different
anglesSemi
NeutronPowders of single
minerals or mixtures (light atom position)
Neutron beam scattered at differing intensities at different
anglesSemi
Particle Microscopy
High resolution imagingFeatures smaller than
1μm
Transmission Electron Microscopy
Images of structural defects: dislocations,
twin and phase boundaries
Accelerated (high voltage)electron beam deeply penetrates small area
Non
Scanning Electron Microscopy
Image sample morphology and
determine compositional
variations
Accelerated (low voltage)electron beam shallowly
penetrates large areaNon
Atomic Force Microscopy
Image arrangement of individual atoms in
surface of crystals
Measure electrostatic repulsion intensity of atoms in sample in close contact with atoms of a
crystal tip
Non
Analytical Methods
Technique Type
Technique application
SubdivisionsSpecific
applicationDescription Destruction
Chemical AnalysisAccurate chemical
compositions of minerals
Microprobe
Quantitative point analyses in polished sections; mostly only
Na and higher
Accelerated electron beam with two detectors: energy
dispersion and x-ray detector compared with standard
Non
X-Ray Fluorescence
Quantitative analyses of rock in
powder; gives chemical elements –
major and trace
High-energy polychromatic X-ray beam produces secondary fluorescent X-rays which are analysed for wavelength and
energy
Semi
Optical emission & absorption
Mostly for liquid sample quantitative chemical analyses
Light beam excite or absorb valence electrons from sample;
secondary beams dispersed into separate wavelengths of
measurable intensities
Complete
Mass spectrometry
Measure amounts of different isotopes - mainly radiometric
dating and determination of stable isotopes
Ionization of atoms, ions accelerated and into magnetic
field which deflects ions – degree of deflection dependant
on ion mass and charge
Complete
Analytical MethodsTechnique
TypeTechnique application
Subdivisions
Specific application
DescriptionDestructi
on
Spectroscopy Investigate structural
environments
Infrared & Raman
Information on symmetry, bond
lengths and angles,
coordination polyhedra
IR radiation or laser beam passed through sample
and intensity of light measured. Absorption of
light corresponds to energy differences of vibratinal levels in the
crystal
Non
X-Ray absorption
Compositional edges in mineral
grains
Measure the difference in absorption of X-rays
relative to the intensity of the rays
Non
Nuclear magnetic resonance
Determine the occupancy of an
element in different
structural sites
Nuclei of atoms in mineral spin to cause magnetic
field which is placed inside a large magnetic field.
Magnetic resonance when applied field = energy
difference in spin levels. Spesific for different
chemical and crystallographic environments
Non
Hoofstuk 13
Meganiese eienskappe van Vervorming
Spanning-vervorming Meganiese eienskappe – uitbeelding van kristal se
geskiedenis Definisies:
• Spanning (σ) Krag per oppervlakeenheid
• Distorsie (ε) Vervorming as ‘n gevolg van die spanning
• Vervorming Elasties
• As spanning verwyder sal vervorming na oorspronklike waarde terugkeer
Plasties or duktiel• Aktiewe dislokasies veroorsaak pemanente veranderinge in struktuur
en vorm, maar materiaal bly in verbinding (in tact) Werksverharding
• Spanning benodig om toenemende vervorming te veroorsaak verhoog vinnig soos wat die toenemende aantal dislokasies interfeer
Bros (Breking)• Materiaal bereik maksimum sterkte en verbrokkel heeltemal
Vervorming
Spanning op kristal Vervorm kristal op kristallografiese
glipvlakke (hkl) met verplasing in kristallografiese gliprigting [uvw]
Glip is nie oombliklik nie, maar plant voort langs die glipvlak soos wat die breking van bindings op mekaar volg en lei tot ‘n volledige verplasing van die twee dele van die kristal
Vervorming
Fig 13.2; 13.3; 13.4
Dislokasie mikrostrukture
Teenwoordig in meeste kristalle selfs by ideale groeitoestande
Aantal dislokasies neem in algemeen toe soos wat vervorming plaasvind
Ontwikkeling en voortplanting van dislokasies word beïnvloed mekaar asook ander hindernisse soos insluitsels
Lusse, diffusie van leё ruimtes (klim)
Dislokasie mikrostruktures
Lusse Fig. 13.6, 13.7
Dislokasie mikrostruktures
►Diffusie van leë ruimtes (klim)
►Fig. 13.8, 13.9
Meganiese vertweelinging
‘n Megaiese spanning kan deel van die kristal laat oorswaai in ‘n orientasie rondom ‘n seker vlak
Nuwe orientasie is verwant aan die oorspronklike orientasie deur ‘n spieёlvlak
Dus: Geometriese tweeling verhouding Vaste kleinskaalse vervorming, anders as
glip wat ‘n aaneenlopende Vervorming is en oor ‘n groot afstand kan plaasvind
Meganiese vertweelinging
Fig 13.10, 13.11