Bai Tap Ve MOSFET2

3
1. The parameters of the circuit shown in Figure Q1 are V DD = 5 V, R 1 = 520 kΩ, R 2 = 320 kΩ, R D = 10 kΩ, and R Si = 0. Assume transistor parameters of V TN = 0.8 V, K n = 0.20 mA/V 2 , and λ= 0. (a) Determine the small-signal parameters g m and r o . (b) Find the small-signal voltage gain v o /v i . (c) Calculate the input and output resistances R i and R o . Figure Q1 Solution: 2. Consider the circuit shown in Figure Q1. Assume transistor parameters of V TN = 0.8 V, K n = 0.20 mA/V 2 , and λ= 0. Let V DD = 5 V, R i = R 1 R 2 = 200 kΩ, and R Si = 0. Determine R D , R 1 , and R 2 such that I DQ = 0.5 mA and the Q-point is in the center of the saturation region. Find the small-signal gain v o /v i . Solution:

description

bài tập về mosfet

Transcript of Bai Tap Ve MOSFET2

Page 1: Bai Tap Ve MOSFET2

1. The parameters of the circuit shown in Figure Q1 are VDD = 5 V, R1 = 520 kΩ, R2 = 320 kΩ, RD = 10 kΩ, and RSi = 0. Assume transistor parameters of VTN = 0.8 V, Kn = 0.20 mA/V2, and λ= 0.

(a) Determine the small-signal parameters gm and ro. (b) Find the small-signal voltage gain vo/vi. (c) Calculate the input and output resistances Ri and Ro.

Figure Q1

Solution:

2. Consider the circuit shown in Figure Q1. Assume transistor parameters of VTN = 0.8 V, Kn = 0.20 mA/V2, and λ= 0. Let VDD = 5 V, Ri = R1 R2 = 200 kΩ, and RSi = 0. Determine RD, R1, and R2 such that IDQ = 0.5 mA and the Q-point is in the center of the saturation region. Find the small-signal gain vo/vi. Solution:

Page 2: Bai Tap Ve MOSFET2

3. The parameters for the transistor in the circuit shown in Figure Q3 are VTN = 0.6 V, Kn = 0.5 mA/V2, and λ= 0. (a) Determine the quiescent values of IDQ and VDSQ ,(b) Find the small-signal voltage gain vo/vi.

Figure Q3

Solution:

Page 3: Bai Tap Ve MOSFET2