Automotive-grade N-channel 650 V, 0.024 typ., 69 A, MDmesh V … · 22-Jan-2013 2 Modified: RDS(on)...
Transcript of Automotive-grade N-channel 650 V, 0.024 typ., 69 A, MDmesh V … · 22-Jan-2013 2 Modified: RDS(on)...
This is information on a product in full production.
August 2013 DocID023457 Rev 4 1/14
STW78N65M5
Automotive-grade N-channel 650 V, 0.024 Ω typ., 69 A, MDmesh™ V Power MOSFET in a TO-247 package
Datasheet - production data
Figure 1. Internal schematic diagram
Features
• Designed for automotive applications and AEC-Q101 qualified
• Higher VDSS rating
• Higher dv/dt capability
• Excellent switching performance
• Easy to drive
• 100% avalanche tested
Applications• Switching applications
DescriptionThis device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
TO-247
12
3
Order code VDS @Tjmax. RDS(on) max. ID
STW78N65M5 710 V 0.032 Ω 69 A
Table 1. Device summary
Order code Marking Package Packaging
STW78N65M5 78N65M5 TO-247 Tube
www.st.com
Contents STW78N65M5
2/14 DocID023457 Rev 4
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
DocID023457 Rev 4 3/14
STW78N65M5 Electrical ratings
14
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VGS Gate- source voltage ±25 V
ID Drain current (continuous) at TC = 25 °C 69 A
ID Drain current (continuous) at TC = 100 °C 41.5 A
IDM (1)
1. Pulse width limited by safe operating area
Drain current (pulsed) 276 A
PTOT Total dissipation at TC = 25 °C 450 W
dv/dt (2)
2. ISD ≤ 69 A, di/dt = 400 A/µs, VDS peak < V(BR)DSS, VDD = 400 V
Peak diode recovery voltage slope 15 V/ns
dv/dt (3)
3. VDS ≤ 520 V
MOSFET dv/dt ruggedness 50 V/ns
Tstg Storage temperature - 55 to 150 °C
Tj Max. operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case max 0.28 °C/W
Rthj-amb Thermal resistance junction-ambient max 50 °C/W
Table 4. Avalanche characteristics
Symbol Parameter Value Unit
IARMax current during repetitive or single pulse avalanche (pulse width limited by TJMAX)
15 A
EASSingle pulse avalanche energy(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
2000 mJ
Electrical characteristics STW78N65M5
4/14 DocID023457 Rev 4
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5. On /off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown voltage (VGS = 0)
ID = 1 mA 650 V
IDSSZero gate voltage drain current (VGS = 0)
VDS = 650 VVDS = 650 V, TC=125 °C
1100
µAµA
IGSSGate-body leakagecurrent (VDS = 0)
VGS = ± 25 V ±100 nA
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V
RDS(on)Static drain-source on- resistance
VGS = 10 V, ID = 34.5 A 0.024 0.032 Ω
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss Input capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
- 9000 - pF
Coss Output capacitance - 210 - pF
CrssReverse transfer capacitance
- 9 - pF
Co(tr)(1)
1. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Equivalent capacitance time related
VGS = 0, VDS = 0 to 520 V - 768 - pF
Co(er)(2)
2. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
Equivalent capacitance energy related
VGS = 0, VDS = 0 to 520 V - 205 - pF
RGIntrinsic gate resistance
f = 1 MHz open drain - 1.5 - Ω
Qg Total gate charge VDD = 520 V, ID = 34.5 A,
VGS = 10 V(see Figure 16)
- 203 - nC
Qgs Gate-source charge - 50 - nC
Qgd Gate-drain charge - 84 - nC
DocID023457 Rev 4 5/14
STW78N65M5 Electrical characteristics
14
Table 7. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(V) Voltage delay timeVDD = 400 V, ID = 40 A,
RG = 4.7 Ω, VGS = 10 V(see Figure 17)(see Figure 20)
- 163 - ns
tr(V) Voltage rise time - 14 - ns
tf(i) Current fall time - 14 - ns
tc(off) Crossing time - 26 - ns
Table 8. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD Source-drain current - 69 A
ISDM (1)
1. Pulse width limited by safe operating area
Source-drain current (pulsed) - 276 A
VSD (2)
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage ISD = 69 A, VGS = 0 - 1.5 V
trr Reverse recovery time ISD = 69 A, di/dt = 100 A/µsVDD = 100 V (see Figure 17)
- 504 ns
Qrr Reverse recovery charge - 13 µC
IRRM Reverse recovery current - 49 A
trr Reverse recovery time ISD = 69 A, di/dt = 100 A/µsVDD = 100 V, Tj = 150 °C
(see Figure 17)
- 635 ns
Qrr Reverse recovery charge - 19 µC
IRRM Reverse recovery current - 59 A
Electrical characteristics STW78N65M5
6/14 DocID023457 Rev 4
2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance
ID
100
10
1
0.10.1 1 100 VDS(V)10
(A)
Opera
tion
in th
is ar
ea is
Limite
d by
max
RDS(o
n)
10µs
100µs
1ms
10msTj=150°CTc=25°CSingle pulse
AM15574v1
ID
50
00 10 VDS(V)20
(A)
5 15 25
100
8V
6V
7V
VGS=10V
150
200
250
AM10393v1ID
75
50
25
03 5 VGS(V)7
(A)
4 6
100
125
150
175
VDS=30V
8 9
200
225
AM10394v1
VGS
6
4
2
00 50 Qg(nC)
(V)
200
8
100 150
10
VDD=520VID=34.5A12
250
AM15575v1RDS(on)
0.026
0.024
0.022
0.0200 20 ID(A)
(Ω)
10 30
VGS=10V
5040 60 70 80
AM10396v1
DocID023457 Rev 4 7/14
STW78N65M5 Electrical characteristics
14
Figure 8. Capacitance variations Figure 9. Output capacitance stored energy
Figure 10. Normalized gate threshold voltage vs temperature
Figure 11. Normalized on-resistance vs temperature
Figure 12. Source-drain diode forward characteristics
Figure 13. Normalized VDS vs temperature
C
1000
100
10
10.1 10 VDS(V)
(pF)
1
10000
100
Ciss
Coss
Crss
100000
1000
AM15577v1 Eoss
15
10
5
00 100 VDS(V)
(µJ)
400
20
200 300
25
30
500 600
35
40
AM10398v1
VGS(th)
1.00
0.90
0.80
0.70-50 0 TJ(°C)
(norm)
-25
1.10
7525 50 100
ID=250µA
VDS=VGS
AM04972v1 RDS(on)
2.5
1
0-55 -25 TJ(°C)
(norm)
5 35
0.5
1.5
2
12565 95
ID=34.5 AVDS=10 V
AM15573v1
VSD
0 20 ISD(A)
(V)
10 5030 400
0.2
0.4
0.6
0.8
1.0
1.2TJ=-50°C
TJ=150°C
TJ=25°C
AM04974v1 VDS
-50 0 TJ(°C)
(norm)
-25 7525 50 1000.92
0.94
0.96
0.98
1.00
1.04
1.06
1.02
ID = 1mA1.08
AM10399v1
Electrical characteristics STW78N65M5
8/14 DocID023457 Rev 4
Figure 14. Switching losses vs gate resistance (1)
1. Eon including reverse recovery of a SiC diode
E
00 20 RG(Ω)
(µJ)
10 30
500
1000
40
Eon
Eoff
1500
2000
2500 ID=40A
VDD=400VVGS=10V
AM15576v1
DocID023457 Rev 4 9/14
STW78N65M5 Test circuits
14
3 Test circuits
Figure 15. Switching times test circuit for resistive load
Figure 16. Gate charge test circuit
Figure 17. Test circuit for inductive load switching and diode recovery times
Figure 18. Unclamped inductive load test circuit
Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
μF3.3μF
VDD
AM01469v1
VDD
47kΩ 1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX
2200μF
PW
IG=CONST100Ω
100nF
D.U.T.
VG
AM01470v1
AD
D.U.T.
SB
G
25 Ω
A A
BB
RG
G
FASTDIODE
D
S
L=100μH
μF3.3 1000
μF VDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200μF
3.3μF VDD
AM01472v1
V(BR)DSS
VDDVDD
VD
IDM
ID
Package mechanical data STW78N65M5
10/14 DocID023457 Rev 4
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
DocID023457 Rev 4 11/14
STW78N65M5 Package mechanical data
14
Table 9. TO-247 mechanical data
Dim.mm.
Min. Typ. Max.
A 4.85 5.15
A1 2.20 2.60
b 1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
∅P 3.55 3.65
∅R 4.50 5.50
S 5.30 5.50 5.70
Package mechanical data STW78N65M5
12/14 DocID023457 Rev 4
Figure 21. TO-247 drawing
0075325_G
DocID023457 Rev 4 13/14
STW78N65M5 Revision history
14
5 Revision history
Table 10. Document revision history
Date Revision Changes
16-Jul-2012 1 First release.
22-Jan-2013 2Modified: RDS(on) on first page, ID, IDM on Table 2, note 2 on Table 2, typical values on Table 6, 7, max and typical values on Table 8, Figure 2, 6, 8, 9, 11 and 14
07-Aug-2013 3
– Minor text changes
– Modified: Applications in first page– Added: MOSFET dv/dt ruggedness parameter in Table 2– Added: Table 4: Avalanche characteristics
– Modified: Figure 15, 16, 17 and 18
08-Aug-2013 4– Minor text changes
– Modified: Figure 14
STW78N65M5
14/14 DocID023457 Rev 4
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