Angstrem 16 07_2010l
Transcript of Angstrem 16 07_2010l
Angstrem Angstrem PPJSC JSC iintroductionntroduction
Angstrem PJSC
25.06.1963Establishmentof R&D Institute of Precision Technologywith “Angstrem” experimental fab
23.06.1993Restructuring into Angstrem JSC
Specialization
• Standard, custom and semi-custom LSI design.• 150 mm IC wafer processing (0.6 – 1.0 μm) – 8 000 wafers/month.• Assembly into ceramic-metal and plastic packages.• Assembly of modules, smart cards, RF transponders and card readers.• Product testing and certification.• ISO-9001 (1994/2000) certified in 2000.
3
Angstrem PJSC Activities• Design, production and sales of
state-of-the-art products:electronic ICs, semiconductor and MEMS devices.
• Enhancement and upgrading ofdesign and production technologies.
• Customer satisfaction throughall currently used device production modes, including:
“Front-End”, “Back-End”, “Fabless”, “Foundry”, etc.
• Offering our customers modern circuit design environment to provide integrated solutions for the customer’s
“know-how”.
• Engaging foreign foundry companiesfor product manufacturing.
• Testing and qualification of products for a variety of applications.
4
Products
Angstrem is the Russian leader in the following products: – Mass production:
• Gate-array chips configurable into semi-custom LSI circuits,• Identification LSI (contact ID and RFID),• Memory LSI, • Power devices,• LCD control LSI.
Baseline upgradeable products:• Microprocessors, microcontrollers, DSPs,• Analog-Digital IC,• Standard logic IC,• Identification (ID) devices and systems,• Interface LSI,• Radio, TV, telecommunications LSI,• Automotive LSI,• Power-saving system LSI, • Medical application LSI,• Electronic calculator, clock/watch. Game LSI.
5
Sales Markets
Ind ia
Singapore
TaiwanHong Kong
ChinaKorea
JapanCyprus
UkraineBulgaria
Austria
USA
LithuaniaByelorussia
Russia
6
MCU
MCU+EEPROM
МPU + МPU RISC (32 b.)
DSP
SRAM, ROM
LCD Drivers
Logic, Gate Arrays
Mixed signal
AD Arrays
High Voltage
Power MOSFET
Foundry
1P1M,
1P2M
1P1M,
1P2M
1P1M, 1P2M, 2P1M1P1M, 1P2M,
2Р2М
1.2-2.0 m1.6-2.0 m1.0-1.2 m0.6-0.8 m
MOSFET,
FRED,
IGBT
BiCMOSCMOS
Basic Technologies
Under dev.
Under dev.
CMOS with 2.0, 1.6, 1.2, 1.0, 0.8, 0.6 µm design rules
150 mm Production Line (Fab 1)Capacity – 8 000 wafers/month, design rules – 0.6-1.0 μm
Area Equipment
PhotolithographyCanon FPA2000i steppers
(0.45 μm)
Dry etchingLAM (RAINBOW 4620; 4500;
TCP9400); Matrix106; GIR-260
Ion Implantation Eaton NV-10-90; NV-6200
Wet Bench FSI; Semitool (SRD); Verteq
CVD ASM
Diffusion ASM
Metallization MRC
TestingMPV-CD; MPV-SP; CD-SEM;
Imager 3300; RS50e; Vector-22
8
2010-2012
Technology prospects
Transition to 0.35-0.5 μm CMOS technology Increasing production capacity Extending traditional production lines by adding new ICtypes like new LSI, VLSI, MRS, RFID, multiplexers, etc.
Strong points
Company advantages
Many years experience in microelectronics (over 45 years) Wide range of electronic devices (LSI,VLSI, memory, microprocessors, ASIC, other logic circuits) Own school of process engineers and designers The first Russian company to develop design environments (design rules, cell libraries, processing files)
Future Prospects and Advantages(Angstrem PJSC plant)
9
Quality Certificates
EN ISO 9001 (2000)15.03.2006 г.
EN ISO 9001 (1994)27.09.2000