Absorption coefficients of semiconductor thin...

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PHYS 4580, PHYS 6/7280 The University of Toledo Profs. R. Ellingson and M. Heben Absorption coefficients of semiconductor thin films November 1, 2011

Transcript of Absorption coefficients of semiconductor thin...

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PHYS 4580, PHYS 6/7280The University of Toledo

Profs. R. Ellingson and M. Heben

Absorption coefficients of semiconductor thin films

November 1, 2011

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Quiz #1 results

7

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1

0

Freq

uenc

y

1086420Score

Quiz 1

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Sheet Resistance (revisited)

http://en.wikipedia.org/wiki/Sheet_resistance

Regular 3-D conductor, resistance R is:WtL

ALR ρρ ==

where ρ is the resistivity (Ω⋅m), A is the cross-section area, and L is the length. For A in terms of W and t,

WLR

WL

tR s== ρ where Rs is the Sheet Resistance. Units are ohms,

but can also express this as “ohms per square, or Ω/⃞, or Ω/sq.

• A square sheet with an Rs of 100 Ω/⃞ has a resistance of 100 Ω (regardless of the size of the square).

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Sheet Resistance – importance of film morphology

Scanning Electron Microscope (SEM) image of ~15 nm thick Au deposited by thermal evaporation.

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Sheet Resistance – importance of film morphology

Scanning Electron Microscope (SEM) image of ~2.7 nm thick Cr deposited by sputtering from a Cr target.

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Sheet Resistance – importance of film morphology

Scanning Electron Microscope (SEM) image of ~15 nm thick Cr deposited by sputtering from a Cr target.

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Sheet Resistance – importance of film morphology

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Thin metal films

“The sheet resistance values corresponding to the 2, 3.1, 4.5 and 8 nm are 5x103, 1.6x103, 4x102 and 1x102 Ω/⃞, respectively.”

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For a Single Absorber Device

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Indirect and Direct Band Gaps

From Wikipedia

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Goals of the Absorption Coefficient Determination Lab (Unit) –address these in your lab report:

1) Measure the optical absorption coefficient for CdS and CdTe films provided.

2) Determine type and size of the band gap for CdS and CdTe

3) Measure the absorption spectrum of the TCO/CdS/CdTe film stack and estimate the thickness of the CdTe and CdS layers in the stack using the data obtained in (1).