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Features• USB 2.0 compliant (high speed, full speed, and low speed)• RON: 4.0Ω typical @ VDD = 3.0V • Channel On Capacitance: 6.0pF• Wide -3dB Bandwidth: 1,000MHz• Low bit-to-bit skew• Low Crosstalk: -29B @ 480 Mbps • Off Isolation: -28dB @ 480 Mbps• Near-Zero propagation delay: 250ps • Support 1.8-V logic on control pins • VDD Operating Range: 3.0V to 5.5V• ESD: 8kV HBM on Y+/Y- pins per JESD22 standard• Y+/Y- pins have over-voltage protection and can tolerate a

short to VBUS• Packaging (Pb-free & Green): 10-contact TQFN, 1.3mm x 1.6mm x 0.75mm (ZL10)

Application• Routes signals for USB 2.0• PC, Notebooks and Hand-held devices

DescriptionThe PI3USB102G is a single differential channel 2:1 multiplexer/demultiplexer USB 2.0 Switch. Industry leading advantages include a propagation delay of 250ps, resulting from its low channel re-sistance and I/O capacitance. PI3USB102G is bidirectional and offers very little attenuation of high-speed signals. It is designed for low bit-to-bit skew, high channel-to-channel noise isolation and is compatible with various standards, such as High Speed USB 2.0 (480 Mb/s). The PI3USB102G offers over voltage protection for the Y+/Y- pins as per the USB 2.0 specification. With the chip powered on or off if Y+/Y- pins are shorted to VBUS (5V +/- 5%), M+/M- and D+/D- outputs are clamped to provide voltage protection for downstream devices. The PI3USB102G has a better Y+/Y- power-off leakage current with the voltage range of 0V to 5V versus 0V to 3.3V for the PI3USB102E.

Block Diagram

M+Y+

M -Y -

D -

D+

OE

SEL Control Logic

over voltage protection

over voltage protection

A product Line ofDiodes Incorporated

PI3USB102G

USB 2.0 High-Speed (480 Mbps) Switch with 5V Protection with Improved Ioff Voltage Range

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PI3USB102G

All trademarks are property of their respective owners. www.diodes.com 01/18/17

Truth Table

SEL OE Y+ Y-

X H Hi-Z Hi-Z

L L M+ M-

H L D+ D-

Pin Description

Pin No. Pin Name Description

1 Y+ USB Data bus2 Y- USB Data bus3 GND Ground4 M- Multiplexed Source Inputs5 M+ Multiplexed Source Inputs6 D- Multiplexed Source Inputs7 D+ Multiplexed Source Inputs8 OE Switch Enable9 VDD Positive Power Supply10 SEL Switch Select

Pin Configuration

M+

GN

D

12

7

6

8

SE

L

VD

D

OE

D+Y+

M-

3 4 5

910

D-Y-

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DC Electrical Characteristics for USB 2.0 Switching over Operating Range (TA = –40°C to +85°C, VDD = 3.0 - 5.5V)

Parameter Description Test Conditions(1) Min. Typ.(2) Max. Units

VIH Input HIGH Voltage Guaranteed HIGH level 1.4VVIL Input LOW Voltage Guaranteed LOW level 0.8

VIK Clamp Diode Voltage VDD = Max., IIK = –18mA -0.7 -1.2IIH Input HIGH Current for SEL and OE VDD = Max., VIH = VDD -100 100

nAIIL Input LOW Current for SEL and OE VDD = Max., VIL = GND -100 100IIH Input HIGH Current for Y+/Y- VDD = 3.3V., VY = 5.25V 50

uAIIL Input LOW Current for Y+/Y- VDD = 3.3V., VY = 0V 1

ILeakageLeakage from Y+/Y- to Vdd when VY+/Y- > Vdd

VDD = 3.3V., VY+/Y- = 5.25V, OE = LOW 200 nA

RON Switch On-Resistance(3) VDD = 3V, 0V ≤ Vinput ≤ 1.0V, ION = –40mA 4.0 5.0

ΩRFLAT(ON) On-Resistance Flatness(3) VDD = 3V, 0V ≤ Vinput ≤ 1.0V, ION = –40mA 1.5

DRON On-Resistance match from center ports to any other port(3)

VDD = 3V, 0V ≤ Vinput ≤ 1.0V, ION = –40mA 0.9 2.0

VOVPInput Over-Voltage Protection Thresh-old(4)

VDD = 3.0 V 3.1 3.2 3.4VVDD = 3.3 V 3.4 3.5 3.7

VDD = 3.6 V 3.7 3.8 4.0

IOZ_MOutput leakage current on port M when D path is on

VY+/Y- = 5.25V, VDD = 3.3V SEL = High, VM+/M- = 0V -200 200 nA

IOZ_DOutput leakage current on port D when M path is on

VY+/Y- = 5.25V, VDD = 3.3V SEL = Low, VD+/D- = 0V -200 200 nA

IOFFY+/Y- Power-Off Leakage Current Vinput = 0V to 5V, VDD = 0V 0.2 1 uA

Storage Temperature ......................................................–65°C to +150°CSupply Voltage to Ground Potential ....................................–0.5V to +6VDC Input Voltage .................................................................–0.5V to +6VDC Output Current ........................................................................120mAPower Dissipation .............................................................................0.5W

Note: Stresses greater than those listed under MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Ex-posure to absolute maximum rating conditions for extended periods may affect reliability.

Maximum Ratings(Above which useful life may be impaired. For user guidelines, not tested.)

Power Supply CharacteristicsParameters Description Test Conditions(1) Min. Typ. Max. Units

IDD Power Supply Current VDD = 3.3V, OE = GND, VSEL = GND or VDD

1 2 uA

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Notes:1. For max. or min. conditions, use appropriate value specified under Electrical Characteristics for the applicable device type.2. VDD = 3.0 - 5.5V, TA = 25°C ambient.3. Measured by the voltage drop between Y+/Y- and the lower of M+/M- and D+/D- at indicated current through the Switch.4. When the voltage at Y+/Y- is greater than VDD + 0.2V, over-voltage protection limits the output voltage at M+/- and D+/- to protectconnected devices from damage.

Capacitance (Ta = 25°C, VDD = 3.3V, f = 1MHz)

Parameters(3) Description Test Conditions(1) Typ.(2) Max. Units

CIN Input Capacitance 2.2 3.2

pFCOFF (M/D) Switch Off Capacitance for M and D ports OE = High 3.0 4.0COFF (Y) Switch Off Capacitance for Y port OE = High 5.0 6.0CON Switch Capacitance, Switch ON VSEL = 0V or VDD 6.0 7.0

Notes:1. For max. or min. conditions, use appropriate value specified under Electrical Characteristics for the applicable device type.2. Typical values are at VDD = 3.3V, TA = 25°C ambient.3. This parameter is determined by device characterization but is not production tested.4. Time duration for output voltage higher than VOVP when input is connected to 5V.5. Output voltage observed at M+/M- and D+/D- during over-voltage condition.6. Tested using a 750 kHz square wave with tr = 75 ns and tf = 75 ns.

Dynamic Electrical Characteristics Over the Operating Range

Parameters(3) Description Test Conditions Min. Typ.(2) Max. Units

XTALK CrosstalkRL = 50Ω, f = 240 MHz

-29dB

OIRR OFF Isolation -28-3dB BW –3dB Bandwidth RL = 50Ω 1,000 MHz-0.5dB BW –0.5dB Bandwidth RL = 50Ω 275 MHz

TOVPOver-Voltage Response Time(4)

CL = 10 pF, VY+/Y- = 5V, VDD = 3.0 to 3.6V (6) 40 100 ns

VDSWDynamic Signal Output Swing(5)

CL = 10 pF, VY+/Y- = 5V, VDD = 3.0 to 3.6V (6) 2.7 3.0 3.6 V

Switching Characteristics Parameters Description Test Conditions (1) Min. Typ. Max. Units

tPD Propagation Delay(2,3)

See Test Circuitfor ElectricalCharacteristics

0.25

nstPZH, tPZL Line Enable Time - SEL, OE to D(+/-), M(+/-) 0.5 50

tPHZ, tPLZ Line Disable Time - SEL, OE to D(+/-), M(+/-) 0.5 11.0

tBBM Break Before Make Delay 9.0 ns

tSKb-b Output skew, bit-to-bit (opposite transition of the same output (tPHL-tPLH)(2) 8 20 ps

Notes:1. For max. or min. conditions, use appropriate value specified under Electrical Characteristics for the applicable device type.2. Guaranteed by design.3. The switch contributes no propagation delay other than the RC delay of the On-Resistance of the switch and the load capacitance. The time constant for the

switch alone is of the order of 0.25ns for 10pF load. Since this time constant is much smaller than the rise/fall times of typical driving signals, it adds very little propagation delay to the system. Propagation delay of the switch when used in a system is determined by the driving circuit on the driving side of the switch and its interactions with the load on the driven side.

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Test Circuit for Electrical Characteristics

Notes:1. CL = Load capacitance: includes jig and probe capacitance. 2. RT = Termination resistance: should be equal to ZOUT of the Pulse Generator3. All input impulses are supplied by generators having the following characteristics: ZO = 50Ω, tR ≤ 2.5ns, tF ≤ 2.5ns.4. The outputs are measured one at a time with on transition per measurement.

Test Circuit for Dynamic Electrical Characteristics

Switch Positions

Test Switch

tPLZ, tPZL 6.0VtPHZ, tPZH GNDProp Delay Open

DUT

PulseGenerator

R T

VDD

D.U.T.VOUT

6.0V

200-ohm

10pF 200-ohm

Application Example Diagram

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Voltage Waveforms Propagation Delay Times

Switching Waveforms

Voltage Waveforms Enable and Disable Times

tPLZ

1.25V 1.25V

2.5V

VOH

0V

VOL

VDD/2

VDD/2

tPHZ

tPZL

tPZH

Waveform 1

Waveform 2

VOL +0.3V

VOH –0.3V

VOL

VOH

SEL

Input

tPLH

2.5V 2.5V

2.5V 2.5V

tPHL

3.5V

1.5V

OutputVOH

VOL

Overvoltage Protection Waveforms

Input Signal Appears At Y+/Y-

Typical Output Response at M+/M- or D+/D-

0

VOVP

5V

0

5V

VOVP

Tr =75ns Tf = 75ns

Tovp

VDSW

The PI3USB102G offers over voltage protection for the Y+/Y- pins to protect from shorts to VBUS (5V). When the voltage on Y+/Y- exceeds VOVP, the voltage at M+/M- and D+/D- is clamped to VDSW within the time TOVP. For rise time of 75 ns (as per USB1.1 and USB2.0 low-speed specifications), TOVP is typically 40 ns. TOVP is smaller for faster risetimes. For example, TOVP is typically 20 ns for rise time of 5 ns.

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DESCRIPTION: 10-Contact, Thin Fine Pitch Quad Flat No-Lead (TQFN) PACKAGE CODE: ZL (ZL10)

DOCUMENT CONTROL #: PD-2052 REVISION: E

:ETAD 88 /30/1380

13-0175

Packaging Mechanicals: 10-Contact TQFN (ZL10)

Ordering Information

Ordering Code Package Code Package Description Top Mark

PI3USB102GZLEX ZL 10-contact, Thin Fine Pitch Quad Flat No-Lead (TQFN), Tape & Reel JW

Notes: • Thermal characteristics can be found on the company web site at www.pericom.com/packaging/ • E = Pb-free and Green • Adding X suffix = Tape/Reel

Note: For latest package info, please check: http://www.pericom.com/support/packaging/packaging-mechanicals-and-thermal-characteristics/

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incor-porated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determina-tive format released by Diodes Incorporated.

LIFE SUPPORTDiodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user.B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incor-porated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2016, Diodes Incorporatedwww.diodes.com

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A product Line of Diodes Incorporated · PDF fileGND or VDD 1 2 uA 17-000. 4 product Line of...

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Transcript of A product Line of Diodes Incorporated · PDF fileGND or VDD 1 2 uA 17-000. 4 product Line of...