2.50 μm The crystalline quality of epitaxial piezoelectric PMN-PT film on Si is better than bulk...

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2.50 μm The crystalline quality of epitaxial piezoelectric PMN-PT film on Si is better than bulk single crystals. Hyper-Active piezoelectric Nanosystems Hyper-Active piezoelectric Nanosystems NIRT ECCS-0708759 NIRT ECCS-0708759 C.B. Eom, C.B. Eom, R. Blick, R. Blick, M.S. Rzchowski, X.Q. Pan, D.G. Schlom, L.Q. Chen. V. Aksyuk M.S. Rzchowski, X.Q. Pan, D.G. Schlom, L.Q. Chen. V. Aksyuk University of Wisconsin-Madison, University of Michigan, Ann Arbor, Penn State University, Bell University of Wisconsin-Madison, University of Michigan, Ann Arbor, Penn State University, Bell Laboratories Laboratories Major challenges are emerging as MEMS move to smaller size and increased integration density, while requiring faster and larger relative motion range. Continued scaling of MEMS to the nanometer regime, NEMS, requires revolutionary advances in actuators. We overcome these challenges with Hyper- Active NEMS devices using epitaxial thin film heterostructures of Pb(Mg 1/3 Nb 2/3 )- PbTiO 3 (PMN-PT) giant piezoelectric materials integrated directly on silicon. We will explore the scientific issues governing their nanoscale size effects and electromechanical coupling. SrRuO 3 PMN-PT 2 nm Si SrRuO 3 PMN-PT 100 nm SrTiO 3 TEM by X.Q. Pan, Michigan Epitaxial piezoelctric films on silicon Background Fabrication of Piezoelectric Cantilever Theory 245nm Pt : 50nm PMN-PT : 300nm Silicon : 175nm SRO/STO/SiO2: 100/13/10nm 100/50nm 245nm 75 um Pt (B.E) 50 um Si STO 2 nm Longitudinal (d 33 ) and Transverse (d 31 ) piezoelectric responses of a nano-island is much higher than continuous films 0.5 m Pb(Mg 1/3 Nb 2/3 )-PbTiO 3 (PMN-PT)/ 0.5 m Si, 5 m wide and 100 m long bi-morph cantilever Orders of magnitude lower actuation voltage required for piezoelectric switches displacements (Z) as compared to classical electrostatic switches. Inset show modeled cantilever. 5 nm 200 nm (b) (a) STO SRO[001] STO[001] (c) SRO[001] 20 nm d 33 (pm/V) e 31 (C/m 2 ) PMN-PT bulk single crystal 1500-2500 -30* Epitaxial PMN-PT Film on Si 1200 -30 Previous work Best PZT Film 400 -13 Previous work Best PMN- PT Film 280 <-7 Broader Impact Teachers from the SESO secondary school in Mayaguez, Puerto Rico participating in atomic layer controlled growth in the PI’s laboratory in summer 2005. We will bring secondary school science teachers from Mayagüez, Puerto Rico each summer for a nanotechnology learning/research experience. We have developed the fabrication process of piezo-MEMS cantilever with new class of giant piezoelectric material. This research will develop a fundamental scientific understanding of new phenomena in hyper active nanoscale electromechanical devices, which can be applied for novel and high performance signal processing, communications, sensors and transducers for medical imaging, and nano-positioning actuators. Hyper-Active NEMS from giant piezoelectric materials will reduce power consumption and enhance speed of actuators and sensitivity of sensors. Outreach -80 -60 -40 -20 0 20 40 60 80 -1800 -1200 -600 0 600 1200 1800 d 33 (pm/V) Field (kV/cm) Continuous film 4 m x 4 m cut capacitor Epitaxial oxide thin film nanostructures fabricated by e-beam lithography which can be used for nanoscale piezoelectric characterization. Longitudinal (d33) and Transverse (d31) piezoelectric responses of epitaxial piezoelectric PMN-PT film on Si is as good as PMN-PT bulk single crystals.
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Transcript of 2.50 μm The crystalline quality of epitaxial piezoelectric PMN-PT film on Si is better than bulk...

Page 1: 2.50 μm The crystalline quality of epitaxial piezoelectric PMN-PT film on Si is better than bulk single crystals. Hyper-Active piezoelectric Nanosystems.

2.50 μm

The crystalline quality of epitaxial piezoelectric PMN-PT film on Si is better than bulk single crystals.

Hyper-Active piezoelectric NanosystemsHyper-Active piezoelectric NanosystemsNIRT ECCS-0708759NIRT ECCS-0708759

C.B. Eom, C.B. Eom, R. Blick,R. Blick, M.S. Rzchowski, X.Q. Pan, D.G. Schlom, L.Q. Chen. V. Aksyuk M.S. Rzchowski, X.Q. Pan, D.G. Schlom, L.Q. Chen. V. Aksyuk University of Wisconsin-Madison, University of Michigan, Ann Arbor, Penn State University, Bell LaboratoriesUniversity of Wisconsin-Madison, University of Michigan, Ann Arbor, Penn State University, Bell Laboratories

Major challenges are emerging as MEMS move to smaller size and increased integration density, while requiring faster and larger relative motion range. Continued scaling of MEMS to the nanometer regime, NEMS, requires revolutionary advances in actuators. We overcome these challenges with Hyper-Active NEMS devices using epitaxial thin film heterostructures of Pb(Mg1/3Nb2/3)-PbTiO3 (PMN-PT) giant piezoelectric materials integrated directly on silicon. We will explore the scientific issues governing their nanoscale size effects and electromechanical coupling.

SrRuO3

PMN-PT

2 nm

Si

SrRuO3

PMN-PT

100 nm

SrTiO3

TEM by X.Q. Pan, Michigan

Epitaxial piezoelctric films on siliconBackground Fabrication of Piezoelectric Cantilever

Theory

245nm

Pt : 50nm

PMN-PT : 300nm

Silicon : 175nm

SRO/STO/SiO2: 100/13/10nm100/50nm

245nm

75 um

Pt (B.E)

50 um

Si

STO

2 nm

Longitudinal (d33) and Transverse (d31) piezoelectric responses of a nano-island is much higher than continuous films

0.5 m Pb(Mg1/3Nb2/3)-PbTiO3 (PMN-PT)/ 0.5 m Si, 5 m wide and 100 m long bi-morph cantilever

Orders of magnitude lower actuation voltage required for piezoelectric switches displacements (Z) as compared to classical electrostatic switches. Inset show modeled cantilever.

5 nm

200 nm

(b)

(a)STO

SRO[001]

STO[001]

(c)

SRO[001]

20 nm

d33 (pm/V) e31 (C/m2)

PMN-PT bulk single crystal 1500-2500 -30*

Epitaxial PMN-PT Film on Si 1200 -30

Previous work Best PZT Film 400 -13

Previous work Best PMN-PT Film 280 <-7

Broader Impact

Teachers from the SESO secondary school in Mayaguez, Puerto Rico participating in atomic layer controlled growth in the PI’s laboratory in summer 2005. We will bring secondary school science teachers from Mayagüez, Puerto Rico each summer for a nanotechnology learning/research experience.

We have developed the fabrication process of piezo-MEMS cantilever with new class of giant piezoelectric material.

This research will develop a fundamental scientific understanding of new phenomena in hyper active nanoscale electromechanical devices, which can be applied for novel and high performance signal processing, communications, sensors and transducers for medical imaging, and nano-positioning actuators. Hyper-Active NEMS from giant piezoelectric materials will reduce power consumption and enhance speed of actuators and sensitivity of sensors.

Outreach

-80 -60 -40 -20 0 20 40 60 80

-1800

-1200

-600

0

600

1200

1800

d 33

(pm

/V)

Field (kV/cm)

Continuous film

4 m x 4 m cut capacitor

Epitaxial oxide thin film nanostructures fabricated by e-beam lithography which can be used for nanoscale piezoelectric characterization.

Longitudinal (d33) and Transverse (d31) piezoelectric responses of epitaxial piezoelectric PMN-PT film on Si is as good as PMN-PT bulk single crystals.