(0.425) - Digi-Key Sheets/Panasonic... · 2018-09-06 · 1. Measuring methods are based on JAPANESE...

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Product Standards Schottky Barrier Diode DB2F43100L1 Note) *1: Ta = Tj = 25℃ *2: Square wave : σ = 0.5 *3: Solder Point Temperature : Tsp ≦ 122℃ *4: Square wave : Tp = 5 ms *5: Power derating is necessary so that Tj < 150℃. (Waveform definition) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. *1: Measurement circuit, input pulse, output pulse for Reverse recovery time (Measurement circuit) (Input pulse) (Output pulse) (1) Bias Insertion Unit (N-50BU) tp = 2 μs IF = 100 mA (2) Pulse Generator (PG-10N), RS = 50 Ω tr = 0.35 ns IR = 100 mA (3) Wave Form Analyzer (SAS-8130), Ri = 50 Ω σ = 0.05 Irr = 10 mA Page Reverse Voltage *1 Maximum Peak Reverse Voltage *1 Non-repetitive Peak Surge Forward Current *1,4 Operating Junction Temperature *5 Tj - VRM V VR Average Forward Current *2,3 IF(AV) - 5.0 A Reverse Recovery Time *1 trr IF = IR = 100 mA, Irr = 10 mA Terminal Capacitance Ct VR = 10 V, f = 1 MHz Reverse Current IR VR = 40 V Forward Voltage Tstg VF IF = 5.0 A Ta JEITA A V - 0.51 0.6 Parameter Symbol Conditions Min 150 IFSM Ambient Temperature Storage Temperature Electrical Characteristics Ta = 25 °C ± 3 °C °C 2. Anode V μA Max Unit Code Panasonic Typ Max 40 40 +150 40 +150 - Unit °C - - -40 -55 °C 1. Cathode Absolute Maximum Ratings Symbol Parameter 1 of 8 DCSP1616010-N1 ns - 45 - - 140 - pF - 15 100 Min Unit: mm RoHS compliant Forward current (Average) IF(AV) ≦ 5.0 A rectification is possible Low forward voltage VF (EU RoHS / MSL:Level 1 compliant) Embossed type (Thermo-compression sealing) : 1 000 pcs / reel (standard) Packaging Marking Symbol: E6 DB2F43100L1 For rectification Features 1.60 2 1.60 1 0.10 (0.425) (R0.175) 1.10 2 0.75 (0.425) 1 0.35 (1) (2) (3) DUT tr tp t VR 10% 90% Irr = IR ÷10 t IR IF trr IF T Tp Time Tp T Duty Cycle : σ = Doc No. TT4-ZZ-02049 Revision. 0 Established : 2018-03-08 Revised : ####-##-##
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Transcript of (0.425) - Digi-Key Sheets/Panasonic... · 2018-09-06 · 1. Measuring methods are based on JAPANESE...

  • Product Standards

    Schottky Barrier Diode

    DB2F43100L1

    Note) *1: Ta = Tj = 25℃

    *2: Square wave : σ = 0.5

    *3: Solder Point Temperature : Tsp ≦ 122℃

    *4: Square wave : Tp = 5 ms

    *5: Power derating is necessary so that Tj < 150℃.

    (Waveform definition)

    Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

    2. This product is sensitive to electric shock (static electricity, etc.).

    Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment.

    3. *1: Measurement circuit, input pulse, output pulse for Reverse recovery time

    (Measurement circuit) (Input pulse) (Output pulse)

    (1) Bias Insertion Unit (N-50BU) tp = 2 μs IF = 100 mA

    (2) Pulse Generator (PG-10N), RS = 50 Ω tr = 0.35 ns IR = 100 mA

    (3) Wave Form Analyzer (SAS-8130), Ri = 50 Ω σ = 0.05 Irr = 10 mA

    Page

    Reverse Voltage *1

    Maximum Peak Reverse Voltage *1

    Non-repetitive Peak Surge Forward Current *1,4

    Operating Junction Temperature *5 Tj

    -

    VRM V

    VR

    Average Forward Current *2,3 IF(AV) - 5.0 A

    Reverse Recovery Time *1 trr IF = IR = 100 mA, Irr = 10 mA

    Terminal Capacitance Ct VR = 10 V, f = 1 MHz

    Reverse Current IR VR = 40 V

    Forward Voltage

    Tstg

    VF IF = 5.0 A

    Ta

    JEITA

    A

    V

    - 0.51 0.6

    Parameter Symbol Conditions Min

    150

    IFSM

    Ambient Temperature

    Storage Temperature

    Electrical Characteristics Ta = 25 °C ± 3 °C

    °C

    2. Anode

    V

    μA

    Max Unit

    Code

    Panasonic

    Typ

    Max4040

    +150

    40

    +150

    -

    Unit

    °C

    --

    -40-55

    °C 1. Cathode

    Absolute Maximum Ratings

    SymbolParameter

    1 of 8

    DCSP1616010-N1

    ns- 45 -- 140 - pF

    - 15 100

    Min

    Unit: mm

    RoHS compliant

    Forward current (Average) IF(AV) ≦ 5.0 A rectification is possible

    Low forward voltage VF

    (EU RoHS / MSL:Level 1 compliant)

    Embossed type (Thermo-compression sealing) : 1 000 pcs / reel (standard)

    Packaging

    Marking Symbol: E6

    DB2F43100L1For rectification

    Features

    (0.425)

    (R0.175)

    1.60

    2

    1.10

    2

    1.60

    1

    0.75

    (0.425)

    0.10

    1

    0.35

    (0.425)

    (R0.175)

    1.60

    2

    1.10

    2

    1.60

    1

    0.75

    (0.425)

    0.10

    1

    0.35

    (1) (2) (3) DUT

    tr tp t

    VR

    10%

    90% Irr = IR ÷10

    t

    IR

    IF

    trr

    IF

    T

    Tp

    Time

    Tp

    T Duty Cycle : σ =

    Doc No. TT4-ZZ-02049 Revision. 0

    Established : 2018-03-08 Revised : ####-##-##

  • Product Standards

    Schottky Barrier Diode

    DB2F43100L1

    (Graph legends)

    Page

    IR - VR / Typical Data

    Revers

    e C

    urr

    ent : IR

    [A

    ]

    (1)

    (2)

    150

    125

    85

    25

    -40

    Ta =

    Ta =

    Ta =

    Ta =

    Ta =

    Electrical Characteristics Technical Data (Reference)

    IF - VF / Typical Data Ct - VR / Typical Data

    Forw

    ard

    Curr

    ent : IF

    [A

    ]

    Term

    inal C

    apacitance : C

    t [p

    F]

    8

    Reverse Voltage : VR [V]

    2 of

    (3)

    (4)

    (5)

    Reverse Voltage : VR [V]

    Forward Voltage : VF [V]

    (2)

    (3)

    (4)

    (5)

    1.0E-10

    1.0E-09

    1.0E-08

    1.0E-07

    1.0E-06

    1.0E-05

    1.0E-04

    1.0E-03

    1.0E-02

    1.0E-01

    0 10 20 30 40

    (4)

    (5)

    (3)

    (2)

    (1)

    1.0E-04

    1.0E-03

    1.0E-02

    1.0E-01

    1.0E+00

    1.0E+01

    0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

    (4)

    0

    100

    200

    300

    400

    500

    600

    700

    800

    900

    1000

    0 10 20 30 40

    Doc No. TT4-ZZ-02049 Revision. 0

    Established : 2018-03-08 Revised : ####-##-##

  • Product Standards

    Schottky Barrier Diode

    DB2F43100L1

    (Waveform definition)

    (Graph legends)

    (Waveform definition)

    (Graph legends)

    Page

    Reverse Voltage : VR [V]

    3 of 8

    (2) σ= 0.7

    (3) σ= 0.5

    (4) σ= 0.2

    Avera

    ge R

    evers

    e P

    ow

    er

    Dis

    sip

    ation : P

    R(A

    V)

    [W]

    (1) σ= 1.0

    PR(AV) - VR / Typical Data

    (1) σ= 1.0

    (2)

    σ= 0.5 (3)

    σ= 0.8

    (4) σ= 0.3

    Average Forward Current : IF(AV) [A]

    Electrical Characteristics Technical Data (Reference)

    PF(AV) - IF(AV) / Typical Data

    Avera

    ge F

    orw

    ard

    Pow

    er

    Dis

    sip

    ation : P

    F(A

    V)

    [W]

    VR

    T

    Tp

    Time

    Tj = 25°C

    (1)

    (2)

    (4)

    (3)

    0.00000

    0.00020

    0.00040

    0.00060

    0.00080

    0.00100

    0 10 20 30 40

    Tj = 25°C (1)

    (3)

    (2)

    (4)

    0.0

    0.5

    1.0

    1.5

    2.0

    2.5

    3.0

    3.5

    4.0

    4.5

    5.0

    0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0

    IF

    T

    Tp

    Time

    Tp

    T Duty Cycle : σ =

    Tp

    T Duty Cycle : σ =

    Doc No. TT4-ZZ-02049 Revision. 0

    Established : 2018-03-08 Revised : ####-##-##

  • Product Standards

    Schottky Barrier Diode

    DB2F43100L1

    (Waveform definition)

    (Graph legends)

    (Waveform definition)

    (Graph legends)

    Page

    Reverse Voltage : VR [V]

    4 of 8

    (2) σ= 0.7

    (3) σ= 0.5

    (4) σ= 0.2

    Avera

    ge R

    evers

    e P

    ow

    er

    Dis

    sip

    ation : P

    R(A

    V)

    [W]

    (1) σ= 1.0

    PR(AV) - VR / Typical Data

    (1) σ= 1.0

    (2) σ= 0.8

    (3) σ= 0.5

    (4) σ= 0.3

    Average Forward Current : IF(AV) [A]

    Electrical Characteristics Technical Data (Reference)

    PF(AV) - IF(AV) / Typical Data

    Avera

    ge F

    orw

    ard

    Pow

    er

    Dis

    sip

    ation : P

    F(A

    V)

    [W]

    VR

    T

    Tp

    Time

    Tj = 125°C

    (1)

    (2)

    (4)

    (3)

    0.00

    0.10

    0.20

    0.30

    0.40

    0.50

    0 5 10 15 20 25 30 35 40 45

    Tj = 150°C

    (1)

    (3)

    (2)

    (4)

    0.0

    0.5

    1.0

    1.5

    2.0

    2.5

    3.0

    3.5

    4.0

    4.5

    5.0

    0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0

    Tp

    T Duty Cycle : σ =

    Tp

    T Duty Cycle : σ =

    IF

    T

    Tp

    Time

    Doc No. TT4-ZZ-02049 Revision. 0

    Established : 2018-03-08 Revised : ####-##-##

  • Product Standards

    Schottky Barrier Diode

    DB2F43100L1

    Note) *1: Device mounted on Ceramic substrate (70mm×70mm×t1.0mm).

    *2: Device mounted on a FR4 PCB (25.4mm×25.4mm, 1mm thick), copper wiring (50.7mm2 area, 36μm thick).

    (Evaluation board outline)

    Note) *1: Single pulse measurement (Graph legends)

    (Waveform definition)

    Page

    -

    -

    °C/W

    Rth - T *1

    / Typical Data

    Rth(j-sp) Ta = 25℃, in free airThermal Resistance, Junction to Solder Point

    Thermal Resistance, Junction to Ambient *1 Rth(j-a) Ta = 25℃, in free air

    250Thermal Resistance, Junction to Ambient *2

    5 of 8

    43 -

    Applying Time : T [s]

    °C/W

    °C/W-

    Thermal Characteristics Technical Data (Reference)

    (2)Device mounted on Ceramic substrate (70mm×70mm×t1.0mm).

    -

    Thermal Characteristics

    (1)Device mounted on a FR4 PCB (25.4mm×25.4mm, 1mm thick),

    copper wiring (50.7mm2 area, 36μm thick).

    -

    UnitParameter Symbol Conditions Min Typ Max

    Rth(j-a) Ta = 25℃, in free air

    Therm

    al R

    esis

    tance : R

    th [℃

    /W]

    8

    (1)

    (2)

    1

    10

    100

    1000

    0.001 0.01 0.1 1 10 100 1000

    Power

    Applying Time : T

    Time

    70mm

    70mm

    Ceramic substrate

    25.4mm

    25.4mm

    Copper wiring

    (50.7mm2)

    FR4 PCB

    Doc No. TT4-ZZ-02049 Revision. 0

    Established : 2018-03-08 Revised : ####-##-##

  • Product Standards

    Schottky Barrier Diode

    DB2F43100L1

    (Evaluation board outline)

    (Waveform definition)

    (Graph legends)

    (Evaluation board outline)

    (Waveform definition)

    (Graph legends)

    Note) *1: Device mounted on a FR4 PCB (25.4mm×25.4mm, 1mm thick), copper wiring (50.7mm2 area, 36μm thick).

    *2: Device mounted on Ceramic substrate (70mm×70mm×t1.0mm).

    Page

    Tp [s]

    6 of 8

    0.05

    (5) σ = 0.02

    (6) σ = 0

    σ =

    0.5

    (2) σ = 0.2

    (3) σ = 0.1

    σ =

    Tp [s]

    Effective Transient Thermal Resistance - Tp *2

    / Typical Data

    Effective T

    ransie

    nt T

    herm

    al R

    esis

    tance [℃

    /W]

    (1)

    (4)

    (5) σ = 0.02

    (6) σ = 0

    Thermal Characteristics Technical Data (Reference)

    Effective Transient Thermal Resistance - Tp *1

    / Typical Data

    Effective T

    ransie

    nt T

    herm

    al R

    esis

    tance [℃

    /W]

    (1) σ = 0.5

    (2) σ = 0.2

    (3) σ = 0.1

    (4) σ = 0.05(6)

    (1)

    (2)

    (3)

    (4)

    (5)

    1

    10

    100

    1000

    0.0001 0.001 0.01 0.1 1 10 100 1000

    (6)

    (1)

    (2)

    (3)

    (4)

    (5)

    1

    10

    100

    1000

    0.0001 0.001 0.01 0.1 1 10 100 1000

    Power

    T

    Tp

    Time

    Tp

    T Duty Cycle : σ =

    Power

    T

    Tp

    Time

    Tp

    T Duty Cycle : σ =

    Doc No. TT4-ZZ-02049 Revision. 0

    Established : 2018-03-08 Revised : ####-##-##

  • Product Standards

    Schottky Barrier Diode

    DB2F43100L1

    (Graph legends) (Waveform definition)

    Note)

    *1: Device mounted on a FR4 PCB (25.4mm×25.4mm, 1mm thick),

    copper wiring (50.7mm2 area, 36μm thick).

    (Evaluation board outline)

    *2: Device mounted on Ceramic substrate (70mm×70mm×t1.0mm).

    (Evaluation board outline)

    Page 7 of 8

    Solder Point Temperature : Tsp [℃]

    Avera

    ge F

    orw

    ard

    Curr

    ent : IF

    (AV

    ) [A

    ]

    (3)

    (4) σ = 0.3

    (1)

    (2)

    σ = 1.0

    σ = 0.8

    σ = 0.5

    Power Derating Technical Data (Reference)

    IF(AV) - Ta *1

    / Typical Data IF(AV) - Ta *2

    / Typical Data

    Avera

    ge F

    orw

    ard

    Curr

    ent : IF

    (AV

    ) [A

    ]

    Avera

    ge F

    orw

    ard

    Curr

    ent : IF

    (AV

    ) [A

    ]

    IF(AV) - Tsp / Typical Data

    Ambient Temperature : Ta [℃] Ambient Temperature : Ta [℃]

    (1)

    (2)

    (3)

    (4)

    Tj =150°C

    0.0

    1.0

    2.0

    3.0

    4.0

    5.0

    6.0

    7.0

    8.0

    0 25 50 75 100 125 150

    (1)

    (2)

    (3)

    (4)

    Tj =150°C

    0.0

    0.2

    0.4

    0.6

    0.8

    1.0

    1.2

    1.4

    1.6

    1.8

    2.0

    0 25 50 75 100 125 150

    (1)

    (2)

    (3)

    (4)

    Tj =150°C

    0.0

    1.0

    2.0

    3.0

    4.0

    5.0

    6.0

    7.0

    8.0

    0 25 50 75 100 125 150

    IF

    T

    Tp

    Time

    Tp

    T Duty Cycle : σ =

    Doc No. TT4-ZZ-02049 Revision. 0

    Established : 2018-03-08 Revised : ####-##-##

  • Product Standards

    Schottky Barrier Diode

    DB2F43100L1

    Unit: mm

    Unit: mm

    Page 8

    DCSP1616010-N1

    Land Pattern (Reference)

    8 of

    (R0.175)

    (0.425)

    0.75

    (0.425)

    2

    1.10±0.03

    10.35±0.03

    2

    0.10±0.02

    1

    1.60±0.03

    1.60±0.03

    0.35

    (R0.175)

    0.75

    1.10

    Doc No. TT4-ZZ-02049 Revision. 0

    Established : 2018-03-08 Revised : ####-##-##

  • Request for your special attention and precautionsin using the technical information and semiconductors described in this book

    (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, thelaws and regulations of the exporting country, especially, those with regard to security export control, must be observed.

    (2) The technical information described in this book is intended only to show the main characteristics and application circuitexamples of the products. No license is granted in and to any intellectual property right or other right owned byPanasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to theinfringement upon any such right owned by any other company which may arise as a result of the use of technicalinformation de-scribed in this book.

    (3) The products described in this book are intended to be used for general applications (such as office equipment,communications equipment, measuring instruments and household appliances), or for specific applications as expresslystated in this book.Please consult with our sales staff in advance for information on the following applications, moreover please exchangedocuments separately on terms of use etc.: Special applications (such as for in-vehicle equipment, airplanes, aerospace,automotive equipment, traffic signaling equipment, combustion equipment, medical equipment and safety devices) inwhich exceptional quality and reliability are required, or if the failure or malfunction of the products may directlyjeopardize life or harm the human body.Unless exchanging documents on terms of use etc. in advance, it is to be understood that our company shall not be heldresponsible for any damage incurred as a result of or in connection with your using the products described in this bookfor any special application.

    (4) The products and product specifications described in this book are subject to change without notice for modificationand/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements.

    (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operatingconditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceedthe range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Other-wise, we will not be liable for any defect which may arise later in your equipment.Even when the products are used within the guaranteed values, take into the consideration of incidence of break downand failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design,arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages,for example, by using the products.

    (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors(ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. We donot guarantee quality for disassembled products or the product re-mounted after removing from the mounting board.When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsedtime since first opening the packages.

    (7) When reselling products described in this book to other companies without our permission and receiving any claim ofrequest from the resale destination, please understand that customers will bear the burden.

    (8) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of ourcompany.

    No.010618