Temperature-dependent photoluminescence of GaN grown on β-Si3N4/Si (1 1 1) by plasma-assisted MBE
Growth of InN layers on Si (111) using ultra thin silicon nitride buffer layer by NPA-MBE
Valence band offset at GaN/β-Si3N4 and β-Si3N4/Si(111) heterojunctions formed by plasma-assisted molecular beam epitaxy