Amorphous lanthanum lutetium oxide thin films as an alternative high-κ gate dielectric

Output power stabilization of cw 337-μm HCN laser by feedback control aided by a microcomputer

States in 152 Sm populated by the (t,α) reaction

Terahertz emission from metal-organic chemical vapor deposition grown Fe:InGaAs using 830 nm to 1.55 μm excitation

1.3 μm room-temperature GaAs-based quantum-dot laser

Synchrotron radiation and absorption at 3ωce with X-mode–O-mode coupling

in the extended Nambu–Jona-Lasinio model

in α -quartz: Characterization of a new type of cation-compensated center

Deuterium site occupation in the oxygen-stabilized η-carbides Zr3V3ODx. II. Application of a geometric modela)

Circuits