2005-11-23Page 1

Rev. 1.1 BSP324

SIPMOS Power-TransistorProduct Summary

VDS 400 V

RDS(on) 25 Ω

ID 0.17 A

Feature

• N-Channel

• Enhancement mode

• Logic Level

• dv/dt rated SOT-223

Marking

BSP324

Type Package Tape and Reel Information

BSP324 SOT-223 E6327: 1000 pcs/reel

Maximum Ratings, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Value Unit

Continuous drain current

TA=25°C

TA=70°C

ID

0.17

0.14

A

Pulsed drain current

TA=25°C

ID puls 0.68

Reverse diode dv/dt

IS=0.17A, VDS=320V, di/dt=200A/µs, Tjmax=175°C

dv/dt 6 kV/µs

Gate source voltage VGS ±20 V

ESD Sensitivity (HBM) as per MIL-STD 883 Class 1

Power dissipation

TA=25°C

Ptot 1.8 W

Operating and storage temperature T j , Tstg -55... +150 °C

IEC climatic category; DIN IEC 68-1 55/150/56

BSP324BSP324 PG-SOT-223 L6327: 1000 pcs/reel

Pb-free lead plating; RoHS compliant•

Rev. 1.1 BSP324

Thermal Characteristics

Parameter Symbol Values Unit

min. typ. max.

Characteristics

Thermal resistance, junction - soldering point

(Pin 4)

RthJS - 16 25 K/W

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area 1)

RthJA

-

-

85

45

115

70

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

VGS=0, ID=250µA

V(BR)DSS 400 - - V

Gate threshold voltage, VGS = VDS

ID=94µA

VGS(th) 1.3 1.9 2.3

Zero gate voltage drain current

VDS=400V, VGS=0, T j=25°C

VDS=400V, VGS=0, T j=125°C

IDSS

-

-

0.01

-

0.1

10

µA

Gate-source leakage current

VGS=20V, VDS=0

IGSS - 10 100 nA

Drain-source on-state resistance

VGS=4.5V, ID=0.05A

RDS(on) - 14.3 22 Ω

Drain-source on-state resistance

VGS=10V, ID=0.17A

RDS(on) - 13.6 25

1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (single layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.

2005-11-23Page 2

Rev. 1.1 BSP324

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance gfs VDS≥2*ID*RDS(on)max,

ID=0.14A

0.09 0.19 - S

Input capacitance Ciss VGS=0, VDS=25V,

f=1MHz

- 103 154 pF

Output capacitance Coss - 9.2 13.6

Reverse transfer capacitance Crss - 3.8 5.7

Turn-on delay time td(on) VDD=225V, VGS=10V,

ID=0.17A, RG=6Ω

- 4.6 6.9 ns

Rise time tr - 4.4 6.6

Turn-off delay time td(off) - 17 25

Fall time tf - 68 102

Gate Charge Characteristics

Gate to source charge Qgs VDD=320V, ID=0.17A - 0.35 0.45 nC

Gate to drain charge Qgd - 2.17 2.82

Gate charge total Qg VDD=320V, ID=0.17A,

VGS=0 to 10V

- 4.54 5.9

Gate plateau voltage V(plateau) VDD=320V, ID=0.17A - 3.6 - V

Reverse Diode

Inverse diode continuous

forward current

IS TA=25°C - - 0.17 A

Inv. diode direct current, pulsed ISM - - 0.68

Inverse diode forward voltage VSD VGS=0, IF=0.17A - 0.8 1.2 V

Reverse recovery time trr VR=200V, IF=lS,

diF/dt=100A/µs

- 85 127 ns

Reverse recovery charge Qrr - 104 156 nC

2005-11-23Page 3

Rev. 1.1 BSP324

1 Power dissipation

Ptot = f (TA)

0 20 40 60 80 100 120 °C 160TA

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

W1.9

BSP324

Pto

t

2 Drain current

ID = f (TA)

parameter: VGS≥ 10 V

0 20 40 60 80 100 120 °C 160

TA

0

0.02

0.04

0.06

0.08

0.1

0.12

0.14

A

0.18 BSP324

I D

3 Safe operating area

ID = f ( VDS )

parameter : D = 0 , TA = 25 °C

10 0

10 1

10 2

10 3 V

VDS

-3 10

-2 10

-1 10

0 10

1 10

A

BSP324

I D

R DS(on)

= V DS

/ I D

DC

10 ms

1 ms

tp = 170.0µs

4 Transient thermal impedance

ZthJA = f (tp)

parameter : D = tp/T

10 -5

10 -4

10 -3

10 -2

10 -1

10 0

10 1

10 2

10 4 s

tp

-2 10

-1 10

0 10

1 10

2 10

K/W

BSP324

Zth

JA

single pulse

0.01

0.02

0.05

0.10

0.20

D = 0.50

2005-11-23Page 4

Rev. 1.1 BSP324

5 Typ. output characteristic

ID = f (VDS)

parameter: Tj = 25 °C, VGS

0 1 2 3 4 5 6 7 8 100

0.1

0.2

0.3

0.4

0.6

10V7V6V5V4.5V4.3V4.1V3.9V3.7V

6 Typ. drain-source on resistance

RDS(on) = f (ID)

parameter: Tj = 25 °C, VGS

0 0.05 0.1 0.15 0.2 0.25 A 0.35

ID

0

2

4

6

8

10

12

14

16

18

Ω22

RD

S(o

n)3.7V3.9V4.1V4.3V4.5V5V6V7V10V

7 Typ. transfer characteristics

ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max

parameter: Tj = 25 °C

0 1 2 3 V 5

VGS

0

0.05

0.1

0.15

0.2

0.25

A

0.35

I D

8 Typ. forward transconductance

gfs = f(ID)

parameter: Tj = 25 °C

0 0.05 0.1 0.15 0.2 0.25 A 0.35

ID

0

0.04

0.08

0.12

0.16

0.2

0.24

0.28

S

0.36

g fs

2005-11-23Page 5

Rev. 1.1 BSP324

9 Drain-source on-state resistance

RDS(on) = f (Tj)

parameter : ID = 0.17 A, VGS = 10 V

-60 -20 20 60 100 °C 180

Tj

0

10

20

30

40

50

60

70

80

90

100

110

Ω130

BSP324

RD

S(o

n)

typ

98%

10 Typ. gate threshold voltage

VGS(th) = f (T j)

parameter: VGS = VDS; ID =94µA

-60 -20 20 60 100 °C 160

Tj

0.6

0.8

1

1.2

1.4

1.6

1.8

2

2.2

V

2.6

- VG

S(th

)

2%

typ.

98%

11 Typ. capacitances

C = f (VDS)

parameter: VGS=0, f=1 MHz, Tj = 25 °C

0 5 10 15 20 V 30 VDS

0 10

1 10

2 10

3 10

pF

C

Crss

Coss

Ciss

12 Forward character. of reverse diode

IF = f (VSD)

parameter: Tj

0 0.4 0.8 1.2 1.6 2 2.4 V 3

VSD

-3 10

-2 10

-1 10

0 10

A

BSP324

I F

T j = 25 °C typ

T j = 25 °C (98%)

T j = 150 °C typ

T j = 150 °C (98%)

2005-11-23Page 6

Rev. 1.1 BSP324

13 Typ. gate charge

VGS = f (QG); parameter: VDS ,

ID = 0.17 A pulsed, Tj = 25 °C

0 1 2 3 4 5 nC 7

QG

0

2

4

6

8

10

12

V

16 BSP324

VG

S

0.2 VDS max

0.5 VDS max

0.8 VDS max

14 Drain-source breakdown voltage

V(BR)DSS = f (Tj)

-60 -20 20 60 100 °C 180

Tj

360

370

380

390

400

410

420

430

440

450

460

470

V490

BSP324

V(B

R)D

SS

2005-11-23Page 7

Rev. 1.1 BSP324

Published byInfineon Technologies AG,Bereichs KommunikationSt.-Martin-Strasse 53,D-81541 München© Infineon Technologies AG 1999All Rights Reserved. Attention please!The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. InformationFor further information on technology, delivery terms and conditions and prices please contact your nearestInfineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). WarningsDue to technical requirements components may contain dangerous substances.For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the healthof the user or other persons may be endangered.

2005-11-23Page 8